On the formation of nanostructures on a CdTe surface, stimulated by surface acoustic waves under nanosecond laser irradiation.
- Published in:
- Semiconductors, 2015, v. 49, n. 2, p. 229, doi. 10.1134/S1063782615020220
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 2
Results: 24
1
2
Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well.
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- Semiconductors, 2015, v. 49, n. 2, p. 143, doi. 10.1134/S1063782615020219
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- Publication type:
- Article
3
Study of the crystal structure of silicon nanoislands on sapphire.
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- Semiconductors, 2015, v. 49, n. 2, p. 154, doi. 10.1134/S1063782615020153
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- Publication type:
- Article
4
The effect of an excess of components on the electrical properties of indium-antimonide films.
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- Semiconductors, 2015, v. 49, n. 2, p. 209, doi. 10.1134/S1063782615020098
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- Publication type:
- Article
5
Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers.
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- Semiconductors, 2015, v. 49, n. 2, p. 224, doi. 10.1134/S1063782615020104
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- Publication type:
- Article
6
Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well.
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- Semiconductors, 2015, v. 49, n. 2, p. 234, doi. 10.1134/S1063782615020086
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- Publication type:
- Article
7
Nucleation and growth of ordered groups of SiGe quantum dots.
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- Semiconductors, 2015, v. 49, n. 2, p. 149, doi. 10.1134/S1063782615020256
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- Publication type:
- Article
8
Molecular beam epitaxy of III-PAs solid solutions: Mechanism of composition formation in the sublattice of a group V element.
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- Semiconductors, 2015, v. 49, n. 2, p. 157, doi. 10.1134/S1063782615020062
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- Publication type:
- Article
9
Transverse plasmon mode in a screened two-dimensional electron system.
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- Semiconductors, 2015, v. 49, n. 2, p. 166, doi. 10.1134/S1063782615020074
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- Publication type:
- Article
10
An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells.
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- Semiconductors, 2015, v. 49, n. 2, p. 170, doi. 10.1134/S1063782615020025
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- Publication type:
- Article
11
Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells.
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- Semiconductors, 2015, v. 49, n. 2, p. 181, doi. 10.1134/S1063782615020037
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- Publication type:
- Article
12
Effects of the electron-electron interaction in the spin resonance in 2D systems with Dresselhaus spin-orbit coupling.
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- Semiconductors, 2015, v. 49, n. 2, p. 174, doi. 10.1134/S106378261502013X
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- Publication type:
- Article
13
Effect of the direct capture of holes with the emission of optical phonons on impurity-photoconductivity relaxation in p-Si:B.
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- Semiconductors, 2015, v. 49, n. 2, p. 187, doi. 10.1134/S1063782615020128
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- Publication type:
- Article
14
Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures.
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- Semiconductors, 2015, v. 49, n. 2, p. 191, doi. 10.1134/S1063782615020141
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- Publication type:
- Article
15
Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an InGaAs quantum well with InAs inserts.
- Published in:
- Semiconductors, 2015, v. 49, n. 2, p. 199, doi. 10.1134/S1063782615020165
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- Publication type:
- Article
16
Antireflective nanostructured zinc oxide arrays produced by pulsed electrodeposition.
- Published in:
- Semiconductors, 2015, v. 49, n. 2, p. 214, doi. 10.1134/S1063782615020116
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- Publication type:
- Article
17
Terahertz-emission generation caused by new effects in the 6 H-SiC natural superlattice.
- Published in:
- Semiconductors, 2015, v. 49, n. 2, p. 242, doi. 10.1134/S1063782615020190
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- Publication type:
- Article
18
Comparative investigation of GaAsSb/InGaAs type-II and InP/InGaAs type-I doped-channel field-effect transistors.
- Published in:
- Semiconductors, 2015, v. 49, n. 2, p. 254, doi. 10.1134/S1063782615020244
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- Publication type:
- Article
19
Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites.
- Published in:
- Semiconductors, 2015, v. 49, n. 2, p. 247, doi. 10.1134/S1063782615020049
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- Publication type:
- Article
20
Adaptation of the model of tunneling in a metal/CaF/Si(111) system for use in industrial simulators of MIS devices.
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- Semiconductors, 2015, v. 49, n. 2, p. 259, doi. 10.1134/S1063782615020207
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- Publication type:
- Article
21
Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates.
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- Semiconductors, 2015, v. 49, n. 2, p. 274, doi. 10.1134/S1063782615020177
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- Publication type:
- Article
22
Features of photoconversion in highly efficient silicon solar cells.
- Published in:
- Semiconductors, 2015, v. 49, n. 2, p. 264, doi. 10.1134/S1063782615020189
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- Publication type:
- Article
23
Dominant factors of the laser gettering of silicon wafers.
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- Semiconductors, 2015, v. 49, n. 2, p. 270, doi. 10.1134/S1063782615020050
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- Publication type:
- Article
24
Influence of the spatial arrangement of the Si δ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures.
- Published in:
- Semiconductors, 2015, v. 49, n. 2, p. 139, doi. 10.1134/S1063782615020232
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- Publication type:
- Article