Works matching IS 10637826 AND DT 2015 AND VI 49 AND IP 1

Results: 27

Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 19, doi. 10.1134/S1063782615010066

By:

Drozdov, Yu.;
Drozdov, M.;
Yunin, P.;
Yurasov, D.;
Shaleev, M.;
Novikov, A.

Publication type:

Article

Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 33, doi. 10.1134/S1063782615010091

By:

Gaisler, V.;
Gaisler, A.;
Jaroshevich, A.;
Derebezov, I.;
Kachanova, M.;
Zhivodkov, Yu.;
Gavrilova, T.;
Medvedev, A.;
Nenasheva, L.;
Grachev, K.;
Sandyrev, V.;
Kozhuhov, A.;
Shayahmetov, V.;
Kalagin, A.;
Bakarov, A.;
Dmitriev, D.;
Toropov, A.;
Shcheglov, D.;
Latyshev, A.;
Aseev, A.

Publication type:

Article

Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 1, doi. 10.1134/S1063782615010182

By:

Pavlov, D.;
Bidus, N.;
Bobrov, A.;
Vikhrova, O.;
Volkova, E.;
Zvonkov, B.;
Malekhonova, N.;
Sorokin, D.

Publication type:

Article

Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 13, doi. 10.1134/S1063782615010273

By:

Zhukavin, R.;
Kovalevsky, K.;
Orlov, M.;
Tsyplenkov, V.;
Bekin, N.;
Yablonskiy, A.;
Yunin, P.;
Pavlov, S.;
Abrosimov, N.;
Hübers, H.;
Radamson, H.;
Shastin, V.

Publication type:

Article

Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 9, doi. 10.1134/S1063782615010054

By:

Dikareva, N.;
Vikhrova, O.;
Zvonkov, B.;
Malekhonova, N.;
Nekorkin, S.;
Pirogov, A.;
Pavlov, D.

Publication type:

Article

Optical lattices of excitons in InGaN/GaN quantum well systems.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 4, doi. 10.1134/S1063782615010042

By:

Chaldyshev, V.;
Bolshakov, A.;
Zavarin, E.;
Sakharov, A.;
Lundin, V.;
Tsatsulnikov, A.;
Yagovkina, M.

Publication type:

Article

Dipolar excitons indirect in real and momentum space in a GaAs/AlAs heterostructure.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 44, doi. 10.1134/S106378261501011X

By:

Gorbunov, A.;
Timofeev, V.

Publication type:

Article

Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 88, doi. 10.1134/S1063782615010170

By:

Maleev, N.;
Blokhin, S.;
Bobrov, M.;
Kuzmenkov, A.;
Blokhin, A.;
Moser, P.;
Lott, J.;
Bimberg, D.;
Ustinov, V.

Publication type:

Article

Excitation of plasmonic terahertz photovoltaic effects in a periodic two-dimensional electron system by the attenuated total reflection method.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 23, doi. 10.1134/S1063782615010078

By:

Fateev, D.;
Mashinsky, K.;
Bagaeva, T.;
Popov, V.

Publication type:

Article

Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 28, doi. 10.1134/S106378261501008X

By:

Firsov, D.;
Vorobjev, L.;
Panevin, V.;
Sofronov, A.;
Balagula, R.;
Makhov, I.;
Kozlov, D.;
Vasil'ev, A.

Publication type:

Article

Energy spectrum and transport in narrow HgTe quantum wells.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 39, doi. 10.1134/S1063782615010108

By:

Germanenko, A.;
Minkov, G.;
Rut, O.;
Sherstobitov, A.;
Dvoretsky, S.;
Mikhailov, N.

Publication type:

Article

Epitaxial growth of hexagonal silicon polytypes on sapphire.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 95, doi. 10.1134/S1063782615010194

By:

Pavlov, D.;
Pirogov, A.;
Krivulin, N.;
Bobrov, A.

Publication type:

Article

Ultra-broadband near-field antenna for terahertz plasmonic applications.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 104, doi. 10.1134/S1063782615010212

By:

Polischuk, O.;
Popov, V.;
Knap, W.

Publication type:

Article

Characteristics of fullerene-based diode structures on polymer and glass substrates.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 134, doi. 10.1134/S1063782615010261

By:

Travkin, V.;
Pakhomov, G.;
Drozdov, M.;
Korolev, S.;
Mashin, A.;
Logunov, A.

Publication type:

Article

Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 50, doi. 10.1134/S1063782615010121

By:

Khazanova, S.;
Degtyarev, V.;
Tikhov, S.;
Baidus, N.

Publication type:

Article

Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 55, doi. 10.1134/S1063782615010133

By:

Khazanova, S.;
Degtyarev, V.;
Malekhonova, N.;
Pavlov, D.;
Baidus, N.

Publication type:

Article

Simulated growth of GaAs nanowires: Catalytic and self-catalyzed growth.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 60, doi. 10.1134/S1063782615010145

By:

Knyazeva, M.;
Nastovjak, A.;
Neizvestny, I.;
Shwartz, N.

Publication type:

Article

Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 69, doi. 10.1134/S1063782615010224

By:

Puzanov, A.;
Obolenskii, S.;
Kozlov, V.

Publication type:

Article

Extension of the radiative lifetime of Wannier-Mott excitons in semiconductor nanoclusters.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 75, doi. 10.1134/S1063782615010157

By:

Kukushkin, V.

Publication type:

Article

Spin coherence of the two-dimensional electron gas in a GaAs quantum well.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 81, doi. 10.1134/S1063782615010169

By:

Larionov, A.

Publication type:

Article

Specific features of NH and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 92, doi. 10.1134/S1063782615010029

By:

Alexeev, A.;
Krasovitsky, D.;
Petrov, S.;
Chaly, V.;
Mamaev, V.;
Sidorov, V.

Publication type:

Article

Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 99, doi. 10.1134/S1063782615010200

By:

Plankina, S.;
Vikhrova, O.;
Danilov, Yu.;
Zvonkov, B.;
Kalentyeva, I.;
Nezhdanov, A.;
Chunin, I.;
Yunin, P.

Publication type:

Article

Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 130, doi. 10.1134/S106378261501025X

By:

Teterin, P.;
Averyanov, D.;
Sadofyev, Yu.;
Parfenov, O.;
Likhachev, I.;
Storchak, V.

Publication type:

Article

Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 109, doi. 10.1134/S1063782615010285

By:

Zvonkov, B.;
Vikhrova, O.;
Dorokhin, M.;
Kalentyeva, I.;
Morozov, S.;
Kryzhkov, D.;
Yunin, P.

Publication type:

Article

Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 113, doi. 10.1134/S1063782615010030

By:

Aleshkin, V.;
Morozov, S.;
Rumyantsev, V.;
Tuzov, I.

Publication type:

Article

Structural, optical, and current investigations of superlattices with a complex AlGaAs-based unit cell.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 118, doi. 10.1134/S1063782615010236

By:

Romanova, Yu.;
Dodin, E.;
Nozdrin, Yu.;
Biryukov, A.;
Baidus, N.;
Pavlov, D.;
Malekhonova, N.

Publication type:

Article

Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 124, doi. 10.1134/S1063782615010248

By:

Sadofyev, Yu.;
Martovitsky, V.;
Bazalevsky, M.;
Klekovkin, A.;
Averyanov, D.;
Vasil'evskii, I.

Publication type:

Article