Search Results | Scholarly Articles, Journals, and E-Books

Results: 27

Optical lattices of excitons in InGaN/GaN quantum well systems.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 4, doi. 10.1134/S1063782615010042
By:
- Chaldyshev, V.;
- Bolshakov, A.;
- Zavarin, E.;
- Sakharov, A.;
- Lundin, V.;
- Tsatsulnikov, A.;
- Yagovkina, M.
Publication type:
Article
Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 9, doi. 10.1134/S1063782615010054
By:
- Dikareva, N.;
- Vikhrova, O.;
- Zvonkov, B.;
- Malekhonova, N.;
- Nekorkin, S.;
- Pirogov, A.;
- Pavlov, D.
Publication type:
Article
Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 13, doi. 10.1134/S1063782615010273
By:
- Zhukavin, R.;
- Kovalevsky, K.;
- Orlov, M.;
- Tsyplenkov, V.;
- Bekin, N.;
- Yablonskiy, A.;
- Yunin, P.;
- Pavlov, S.;
- Abrosimov, N.;
- Hübers, H.;
- Radamson, H.;
- Shastin, V.
Publication type:
Article
Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 33, doi. 10.1134/S1063782615010091
By:
- Gaisler, V.;
- Gaisler, A.;
- Jaroshevich, A.;
- Derebezov, I.;
- Kachanova, M.;
- Zhivodkov, Yu.;
- Gavrilova, T.;
- Medvedev, A.;
- Nenasheva, L.;
- Grachev, K.;
- Sandyrev, V.;
- Kozhuhov, A.;
- Shayahmetov, V.;
- Kalagin, A.;
- Bakarov, A.;
- Dmitriev, D.;
- Toropov, A.;
- Shcheglov, D.;
- Latyshev, A.;
- Aseev, A.
Publication type:
Article
Extension of the radiative lifetime of Wannier-Mott excitons in semiconductor nanoclusters.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 75, doi. 10.1134/S1063782615010157
By:
- Kukushkin, V.
Publication type:
Article
Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 19, doi. 10.1134/S1063782615010066
By:
- Drozdov, Yu.;
- Drozdov, M.;
- Yunin, P.;
- Yurasov, D.;
- Shaleev, M.;
- Novikov, A.
Publication type:
Article
Spin coherence of the two-dimensional electron gas in a GaAs quantum well.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 81, doi. 10.1134/S1063782615010169
By:
- Larionov, A.
Publication type:
Article
Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 88, doi. 10.1134/S1063782615010170
By:
- Maleev, N.;
- Blokhin, S.;
- Bobrov, M.;
- Kuzmenkov, A.;
- Blokhin, A.;
- Moser, P.;
- Lott, J.;
- Bimberg, D.;
- Ustinov, V.
Publication type:
Article
Specific features of NH and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 92, doi. 10.1134/S1063782615010029
By:
- Alexeev, A.;
- Krasovitsky, D.;
- Petrov, S.;
- Chaly, V.;
- Mamaev, V.;
- Sidorov, V.
Publication type:
Article
Excitation of plasmonic terahertz photovoltaic effects in a periodic two-dimensional electron system by the attenuated total reflection method.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 23, doi. 10.1134/S1063782615010078
By:
- Fateev, D.;
- Mashinsky, K.;
- Bagaeva, T.;
- Popov, V.
Publication type:
Article
Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 28, doi. 10.1134/S106378261501008X
By:
- Firsov, D.;
- Vorobjev, L.;
- Panevin, V.;
- Sofronov, A.;
- Balagula, R.;
- Makhov, I.;
- Kozlov, D.;
- Vasil'ev, A.
Publication type:
Article
Dipolar excitons indirect in real and momentum space in a GaAs/AlAs heterostructure.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 44, doi. 10.1134/S106378261501011X
By:
- Gorbunov, A.;
- Timofeev, V.
Publication type:
Article
Energy spectrum and transport in narrow HgTe quantum wells.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 39, doi. 10.1134/S1063782615010108
By:
- Germanenko, A.;
- Minkov, G.;
- Rut, O.;
- Sherstobitov, A.;
- Dvoretsky, S.;
- Mikhailov, N.
Publication type:
Article
Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 50, doi. 10.1134/S1063782615010121
By:
- Khazanova, S.;
- Degtyarev, V.;
- Tikhov, S.;
- Baidus, N.
Publication type:
Article
Influence of the technological parameters of growth on the characteristics of double tunnel-coupled InGaAs/GaAs quantum wells.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 55, doi. 10.1134/S1063782615010133
By:
- Khazanova, S.;
- Degtyarev, V.;
- Malekhonova, N.;
- Pavlov, D.;
- Baidus, N.
Publication type:
Article
Simulated growth of GaAs nanowires: Catalytic and self-catalyzed growth.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 60, doi. 10.1134/S1063782615010145
By:
- Knyazeva, M.;
- Nastovjak, A.;
- Neizvestny, I.;
- Shwartz, N.
Publication type:
Article
Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 69, doi. 10.1134/S1063782615010224
By:
- Puzanov, A.;
- Obolenskii, S.;
- Kozlov, V.
Publication type:
Article
Epitaxial growth of hexagonal silicon polytypes on sapphire.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 95, doi. 10.1134/S1063782615010194
By:
- Pavlov, D.;
- Pirogov, A.;
- Krivulin, N.;
- Bobrov, A.
Publication type:
Article
Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 99, doi. 10.1134/S1063782615010200
By:
- Plankina, S.;
- Vikhrova, O.;
- Danilov, Yu.;
- Zvonkov, B.;
- Kalentyeva, I.;
- Nezhdanov, A.;
- Chunin, I.;
- Yunin, P.
Publication type:
Article
Ultra-broadband near-field antenna for terahertz plasmonic applications.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 104, doi. 10.1134/S1063782615010212
By:
- Polischuk, O.;
- Popov, V.;
- Knap, W.
Publication type:
Article
Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 109, doi. 10.1134/S1063782615010285
By:
- Zvonkov, B.;
- Vikhrova, O.;
- Dorokhin, M.;
- Kalentyeva, I.;
- Morozov, S.;
- Kryzhkov, D.;
- Yunin, P.
Publication type:
Article
Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 113, doi. 10.1134/S1063782615010030
By:
- Aleshkin, V.;
- Morozov, S.;
- Rumyantsev, V.;
- Tuzov, I.
Publication type:
Article
Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 1, doi. 10.1134/S1063782615010182
By:
- Pavlov, D.;
- Bidus, N.;
- Bobrov, A.;
- Vikhrova, O.;
- Volkova, E.;
- Zvonkov, B.;
- Malekhonova, N.;
- Sorokin, D.
Publication type:
Article
Structural, optical, and current investigations of superlattices with a complex AlGaAs-based unit cell.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 118, doi. 10.1134/S1063782615010236
By:
- Romanova, Yu.;
- Dodin, E.;
- Nozdrin, Yu.;
- Biryukov, A.;
- Baidus, N.;
- Pavlov, D.;
- Malekhonova, N.
Publication type:
Article
Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 124, doi. 10.1134/S1063782615010248
By:
- Sadofyev, Yu.;
- Martovitsky, V.;
- Bazalevsky, M.;
- Klekovkin, A.;
- Averyanov, D.;
- Vasil'evskii, I.
Publication type:
Article
Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 130, doi. 10.1134/S106378261501025X
By:
- Teterin, P.;
- Averyanov, D.;
- Sadofyev, Yu.;
- Parfenov, O.;
- Likhachev, I.;
- Storchak, V.
Publication type:
Article
Characteristics of fullerene-based diode structures on polymer and glass substrates.
Published in:
Semiconductors, 2015, v. 49, n. 1, p. 134, doi. 10.1134/S1063782615010261
By:
- Travkin, V.;
- Pakhomov, G.;
- Drozdov, M.;
- Korolev, S.;
- Mashin, A.;
- Logunov, A.
Publication type:
Article