Metastable state of the CdTe-HgTe system.
- Published in:
- Semiconductors, 2014, v. 48, n. 13, p. 1697, doi. 10.1134/S1063782614130144
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 13
Results: 15
1
2
Specific features of the photoconductivity of semi-insulating cadmium telluride.
- Published in:
- Semiconductors, 2014, v. 48, n. 13, p. 1700, doi. 10.1134/S1063782614130077
- By:
- Publication type:
- Article
3
Effect of bottom-electrode morphology on the dielectric characteristics of the metal-ferroelectric-metal planar structure.
- Published in:
- Semiconductors, 2014, v. 48, n. 13, p. 1704, doi. 10.1134/S1063782614130120
- By:
- Publication type:
- Article
4
Simulation of the frequency dispersion of effective dielectric characteristics of composite materials.
- Published in:
- Semiconductors, 2014, v. 48, n. 13, p. 1710, doi. 10.1134/S1063782614130156
- By:
- Publication type:
- Article
5
Numerical simulation of the effect of non-steady-state conditions on the formation of concentration growth striations when growing crystals by the Bridgman method.
- Published in:
- Semiconductors, 2014, v. 48, n. 13, p. 1716, doi. 10.1134/S1063782614130089
- By:
- Publication type:
- Article
6
Surface photovoltage method for the quality control of silicon epitaxial layers on sapphire.
- Published in:
- Semiconductors, 2014, v. 48, n. 13, p. 1720, doi. 10.1134/S1063782614130168
- By:
- Publication type:
- Article
7
Influence of size effects on the radiation stability of nanocrystalline materials.
- Published in:
- Semiconductors, 2014, v. 48, n. 13, p. 1751, doi. 10.1134/S1063782614130065
- By:
- Publication type:
- Article
8
Formation of polycrystalline-silicon films with hemispherical grains for capacitor structures with increased capacitance.
- Published in:
- Semiconductors, 2014, v. 48, n. 13, p. 1724, doi. 10.1134/S1063782614130119
- By:
- Publication type:
- Article
9
Effect of an organic molecular coating on control over the conductance of carbon nanotube channel.
- Published in:
- Semiconductors, 2014, v. 48, n. 13, p. 1735, doi. 10.1134/S106378261413003X
- By:
- Publication type:
- Article
10
Effect of the morphology of CNT arrays on the current density of field-emitter matrices.
- Published in:
- Semiconductors, 2014, v. 48, n. 13, p. 1742, doi. 10.1134/S1063782614130053
- By:
- Publication type:
- Article
11
Tunneling through a GaN/AlN-based double-barrier resonant tunneling heterostructure.
- Published in:
- Semiconductors, 2014, v. 48, n. 13, p. 1747, doi. 10.1134/S1063782614130041
- By:
- Publication type:
- Article
12
Study of the self-organization processes in lead sulfide quantum dots.
- Published in:
- Semiconductors, 2014, v. 48, n. 13, p. 1729, doi. 10.1134/S1063782614130132
- By:
- Publication type:
- Article
13
Formation of an array of ordered nanocathodes based on carbon nanotubes by nanoimprint lithography and PECVD processes.
- Published in:
- Semiconductors, 2014, v. 48, n. 13, p. 1732, doi. 10.1134/S1063782614130090
- By:
- Publication type:
- Article
14
Formation of a memristor matrix based on titanium oxide and investigation by probe-nanotechnology methods.
- Published in:
- Semiconductors, 2014, v. 48, n. 13, p. 1757, doi. 10.1134/S1063782614130028
- By:
- Publication type:
- Article
15
New types of surface acoustoelectric waves and acoustic charge transport in GaAs crystals.
- Published in:
- Semiconductors, 2014, v. 48, n. 13, p. 1689, doi. 10.1134/S1063782614130107
- By:
- Publication type:
- Article