Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 12

Results: 23

Electrical properties of diluted n- and p-SiGe at small x.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1552, doi. 10.1134/S1063782614120069
By:
- Emtsev, V.;
- Abrosimov, N.;
- Kozlovskii, V.;
- Oganesyan, G.
Publication type:
Article
Thermally stimulated 3-15 THz emission at plasmon-phonon frequencies in polar semiconductors.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1557, doi. 10.1134/S106378261412015X
By:
- Požela, J.;
- Požela, K.;
- Šilėnas, A.;
- Širmulis, E.;
- Kašalynas, I.;
- Jucienė, V.;
- Venckevičius, R.
Publication type:
Article
Optical properties of CdS-PbS films and the possibility of the photoeffect in the mid-infrared range.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1562, doi. 10.1134/S1063782614120197
By:
- Rokakh, A.;
- Bilenko, D.;
- Shishkin, M.;
- Skaptsov, A.;
- Venig, S.;
- Matasov, M.
Publication type:
Article
Nanostructured GeSbTe chalcogenide films produced by laser electrodispersion.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1567, doi. 10.1134/S1063782614120239
By:
- Yavsin, D.;
- Kozhevin, V.;
- Gurevich, S.;
- Yakovlev, S.;
- Melekh, B.;
- Yagovkina, M.;
- Pevtsov, A.
Publication type:
Article
Doping and defect formation in thermoelectric ZnSb doped with copper.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1571, doi. 10.1134/S1063782614120161
By:
- Prokofieva, L.;
- Konstantinov, P.;
- Shabaldin, A.;
- Pshenai-Severin, D.;
- Burkov, A.;
- Fedorov, M.
Publication type:
Article
On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4 H-SiC and SiO produced by thermal oxidation in dry oxygen.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1581, doi. 10.1134/S1063782614120148
By:
- Mikhaylov, A.;
- Afanasiev, A.;
- Ilyin, V.;
- Luchinin, V.;
- Reshanov, S.;
- Krieger, M.;
- Schöner, A.;
- Sledziewski, T.
Publication type:
Article
Specific features of the nonradiative relaxation of Er ions in epitaxial Si structures.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1586, doi. 10.1134/S1063782614120112
By:
- Kudryavtsev, K.;
- Kryzhkov, D.;
- Antonov, A.;
- Shengurov, D.;
- Shmagin, V.;
- Krasilnik, Z.
Publication type:
Article
Magnetooptical study of CdSe/ZnMnSe semimagnetic quantum-dot ensembles with n-type modulation doping.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1592, doi. 10.1134/S1063782614120185
By:
- Reshina, I.;
- Ivanov, S.
Publication type:
Article
Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1600, doi. 10.1134/S1063782614120057
By:
- Egorov, A.;
- Brunkov, P.;
- Nikitina, E.;
- Pirogov, E.;
- Sobolev, M.;
- Lazarenko, A.;
- Baidakova, M.;
- Kirilenko, D.;
- Konnikov, S.
Publication type:
Article
Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on n-Si (100).
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1605, doi. 10.1134/S1063782614120021
By:
- Bagraev, N.;
- Kuzmin, R.;
- Gurin, A.;
- Klyachkin, L.;
- Malyarenko, A.;
- Mashkov, V.
Publication type:
Article
Optical properties of nanowire structures produced by the metal-assisted chemical etching of lightly doped silicon crystal wafers.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1613, doi. 10.1134/S1063782614120082
By:
- Gonchar, K.;
- Osminkina, L.;
- Sivakov, V.;
- Lysenko, V.;
- Timoshenko, V.
Publication type:
Article
Increase of the electron mobility in HEMT heterostructures with composite spacers containing AlAs nanolayers.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1619, doi. 10.1134/S1063782614120227
By:
- Vinichenko, A.;
- Gladkov, V.;
- Kargin, N.;
- Strikhanov, M.;
- Vasil'evskii, I.
Publication type:
Article
Lasing in microdisks of ultrasmall diameter.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1626, doi. 10.1134/S1063782614120240
By:
- Zhukov, A.;
- Kryzhanovskaya, N.;
- Maximov, M.;
- Lipovskii, A.;
- Savelyev, A.;
- Bogdanov, A.;
- Shostak, I.;
- Moiseev, E.;
- Karpov, D.;
- Laukkanen, J.;
- Tommila, J.
Publication type:
Article
Solar-energy conversion by combined photovoltaic converters with CdTe and CuInSe base layers.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1631, doi. 10.1134/S1063782614120094
By:
- Khrypunov, G.;
- Sokol, E.;
- Yakimenko, Yu.;
- Meriuts, A.;
- Ivashuk, A.;
- Shelest, T.
Publication type:
Article
Conductance matrix of multiterminal semiconductor devices with edge channels.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1636, doi. 10.1134/S1063782614120045
By:
- Danilovskii, E.;
- Bagraev, N.
Publication type:
Article
Picosecond switching of high-voltage reverse-biased p- n- n structures to the conductive state by pulsed light.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1645, doi. 10.1134/S1063782614120124
By:
- Kyuregyan, A.
Publication type:
Article
High-power LEDs based on InGaAsP/InP heterostructures.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1653, doi. 10.1134/S1063782614120173
By:
- Rakovics, V.;
- Imenkov, A.;
- Sherstnev, V.;
- Serebrennikova, O.;
- Il'inskaya, N.;
- Yakovlev, Yu.
Publication type:
Article
Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1657, doi. 10.1134/S1063782614120033
By:
- Bobrov, M.;
- Blokhin, S.;
- Kuzmenkov, A.;
- Maleev, N.;
- Blokhin, A.;
- Zadiranov, Yu.;
- Nikitina, E.;
- Ustinov, V.
Publication type:
Article
Improvement of the efficiency of silicon solar cells.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1664, doi. 10.1134/S1063782614120070
By:
- Fuks, B.
Publication type:
Article
Use of double-layer ITO films in reflective contacts for blue and near-UV LEDs.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1674, doi. 10.1134/S1063782614120136
By:
- Markov, L.;
- Smirnova, I.;
- Pavluchenko, A.;
- Kukushkin, M.;
- Zakheim, D.;
- Pavlov, S.
Publication type:
Article
Effect of annealing on the kinetic properties and band parameters of HgCdEuSe semiconductor crystals.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1680, doi. 10.1134/S1063782614120100
By:
- Kovalyuk, T.;
- Maistruk, E.;
- Maryanchuk, P.
Publication type:
Article
On the sol-gel synthesis of strontium-titanate thin films and the prospects of their use in electronics.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1685, doi. 10.1134/S1063782614120215
By:
- Sohrabi Anaraki, H.;
- Gaponenko, N.;
- Rudenko, M.;
- Guk, A.;
- Zavadskij, S.;
- Golosov, D.;
- Kolosnitsyn, B.;
- Kolos, V.;
- Pyatlitskij, A.;
- Turtsevich, A.
Publication type:
Article
Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru.
Published in:
Semiconductors, 2014, v. 48, n. 12, p. 1545, doi. 10.1134/S1063782614120203
By:
- Romaka, V.;
- Rogl, P.;
- Stadnyk, Yu.;
- Korzh, R.;
- Krayovskyy, V.;
- Horyn, A.
Publication type:
Article