Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 10
Results: 26
On the band gap and thermal expansion of MnInS single crystals.
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- Semiconductors, 2014, v. 48, n. 10, p. 1267, doi. 10.1134/S1063782614100054
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Effect of deviations from the stoichiometric composition on the electrical and photoelectrical properties of the HgInTe compound.
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- Semiconductors, 2014, v. 48, n. 10, p. 1271, doi. 10.1134/S1063782614100091
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'Exciton' photoconductivity in GaAs crystals.
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- Semiconductors, 2014, v. 48, n. 10, p. 1275, doi. 10.1134/S1063782614100030
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Electron structure and charge-carrier effective masses in InGaN ( x = 0.25, 0.5, and 0.75) cubic systems.
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- Semiconductors, 2014, v. 48, n. 10, p. 1281, doi. 10.1134/S106378261410011X
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Effect of temperature on the thermodynamic density of states in a quantizing magnetic field.
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- Semiconductors, 2014, v. 48, n. 10, p. 1287, doi. 10.1134/S1063782614100108
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Comparison of the radiation hardness of silicon and silicon carbide.
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- Semiconductors, 2014, v. 48, n. 10, p. 1293, doi. 10.1134/S1063782614100170
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Determination of the structural and optical characteristics of CuZnSnS semiconductor thin films.
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- Semiconductors, 2014, v. 48, n. 10, p. 1296, doi. 10.1134/S1063782614100273
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Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose.
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- Semiconductors, 2014, v. 48, n. 10, p. 1303, doi. 10.1134/S1063782614100285
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Mechanism of current flow in a Au-Ti-Al-Ti- n-GaN ohmic contact in the temperature range of 4.2-300 K.
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- Semiconductors, 2014, v. 48, n. 10, p. 1308, doi. 10.1134/S106378261410025X
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Quantum corrections to threshold voltages for fully depleted SOI transistors with two independent gates.
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- Semiconductors, 2014, v. 48, n. 10, p. 1312, doi. 10.1134/S1063782614100248
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Enhancement of low temperature electron mobility due to an electric field in an InGaAs/InAlAs double quantum well structure.
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- Semiconductors, 2014, v. 48, n. 10, p. 1318, doi. 10.1134/S1063782614100261
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Effective Hamiltonians for heterostructures based on direct-gap III-V semiconductors. The kp perturbation theory and the method of invariants.
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- Semiconductors, 2014, v. 48, n. 10, p. 1324, doi. 10.1134/S106378261410008X
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Charge transport in Si-SiO and Si-TiO nanocomposite structures.
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- Semiconductors, 2014, v. 48, n. 10, p. 1335, doi. 10.1134/S1063782614100200
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On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures.
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- Semiconductors, 2014, v. 48, n. 10, p. 1342, doi. 10.1134/S1063782614100236
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Extremely short electromagnetic pulse in a superlattice taking into account field inhomogeneity along its axis.
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- Semiconductors, 2014, v. 48, n. 10, p. 1348, doi. 10.1134/S1063782614100078
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Specific features of preparation of dense ceramic based on barium zirconate.
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- Semiconductors, 2014, v. 48, n. 10, p. 1353, doi. 10.1134/S1063782614100182
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P-InAsSbP/ n-InAs/ n-InAs photodiodes for operation at moderate cooling (150-220 K).
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- Semiconductors, 2014, v. 48, n. 10, p. 1359, doi. 10.1134/S1063782614100066
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Injection photodiode based on a p-Si- n-CdS- n-CdS structure.
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- Semiconductors, 2014, v. 48, n. 10, p. 1363, doi. 10.1134/S1063782614100212
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Photoelectric and photovoltaic properties of structures based on mesoporous silicon passivated with iron.
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- Semiconductors, 2014, v. 48, n. 10, p. 1370, doi. 10.1134/S1063782614100042
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Planar light-emitting microcavities based on hydrogenated amorphous silicon carbide.
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- Semiconductors, 2014, v. 48, n. 10, p. 1374, doi. 10.1134/S1063782614100194
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p-Si/nano-SiO/ n-Si capacitor-based tunnel diode with negative differential resistance and a quartz resonator.
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- Semiconductors, 2014, v. 48, n. 10, p. 1381, doi. 10.1134/S1063782614100145
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The performance of alloyed (CdSSe) quantum dots-sensitized TiO solar cell.
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- Semiconductors, 2014, v. 48, n. 10, p. 1385, doi. 10.1134/S1063782614100029
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Study of the relaxation of the excess current in silicon Schottky diodes.
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- Semiconductors, 2014, v. 48, n. 10, p. 1391, doi. 10.1134/S1063782614100224
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p-ZnO nanowires-A promising material for the fabrication of vacuum pressure sensors.
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- Semiconductors, 2014, v. 48, n. 10, p. 1395, doi. 10.1134/S1063782614100133
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Electroluminescence properties of a whispering-gallery-mode laser with coupled disk cavities.
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- Semiconductors, 2014, v. 48, n. 10, p. 1399, doi. 10.1134/S1063782614100121
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Lattice vibrations of ZnCdSe semiconductor alloy in the two-mode and percolation models of rearrangement of the vibrational spectrum with the composition.
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- Semiconductors, 2014, v. 48, n. 10, p. 1261, doi. 10.1134/S1063782614100157
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