Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 7

Results: 22

On the structure of InSb nanowires in the channels of chrysotile asbestos.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 974, doi. 10.1134/S1063782614070215

By:

Uryupin, O.;
Kartenko, N.;
Tabachkova, N.

Publication type:

Article

Absorption spectra of TiO thin films synthesized by the reactive radio-frequency magnetron sputtering of titanium.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 848, doi. 10.1134/S1063782614070094

By:

Ievlev, V.;
Kushchev, S.;
Latyshev, A.;
Leonova, L.;
Ovchinnikov, O.;
Smirnov, M.;
Popova, E.;
Kostyuchenko, A.;
Soldatenko, S.

Publication type:

Article

High-temperature interfacial electroluminescence in type-II broken-gap heterostructures based on InSb quantum dashes in n-InAs matrix.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 911, doi. 10.1134/S1063782614070197

By:

Romanov, V.;
Ivanov, E.;
Moiseev, K.

Publication type:

Article

Transport properties of epitaxial graphene formed on the surface of a superconductor.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 924, doi. 10.1134/S1063782614070021

By:

Alisultanov, Z.;
Meilanov, R.

Publication type:

Article

Electronic properties of p-GaN(Mg) irradiated with reactor neutrons.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 859, doi. 10.1134/S1063782614070033

By:

Boiko, V.;
Brudnyi, V.;
Verevkin, S.;
Ermakov, V.;
Kolin, N.;
Korulin, A.;
Polyakov, A.

Publication type:

Article

Determination of the diffusion length of minority charge carriers in a semiconductor from the dynamic nonequilibrium I- V characteristics of MIS structures.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 875, doi. 10.1134/S1063782614070161

By:

Popov, V.

Publication type:

Article

Electrical properties of anisotype n-CdO/ p-Si heterojunctions.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 899, doi. 10.1134/S1063782614070203

By:

Solovan, M.;
Brus, V.;
Maryanchuk, P.

Publication type:

Article

Effect of the growth temperature on the statistical parameters of GaN surface morphology.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 872, doi. 10.1134/S1063782614070148

By:

Novikov, V.;
Preobrazhenskii, V.;
Ivonin, I.

Publication type:

Article

Electrophoretic deposition of CdS colloidal nanoparticles onto an amorphous silicon membrane.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 967, doi. 10.1134/S1063782614070057

By:

Filippov, N.;
Vandysheva, N.;
Parashchenko, M.;
Kosolobov, S.;
Semenova, O.;
Anarbaev, R.;
Pyshnyi, D.;
Pyshnaya, I.;
Romanov, S.

Publication type:

Article

Erratum to: 'Influence of the nonequilibrium-carrier concentration on the Hall voltage in a p-type semiconductor'.

Published in:

2014

By:

Konin, A.

Publication type:

Erratum

On statistically distributed inhomogeneities according to data on transverse magnetoresistance for the case of atmospheric and uniform pressure in narrow-gap n-InSb and n-CdSnAs semiconductors.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 839, doi. 10.1134/S1063782614070069

By:

Gadjialiev, M.;
Daunov, M.;
Kamilov, I.;
Musaev, A.

Publication type:

Article

Raman scattering in ZnGaSe single crystals.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 868, doi. 10.1134/S1063782614070112

By:

Kerimova, T.;
Mamedova, I.;
Abdullayev, N.;
Asadullayeva, S.;
Badalova, Z.

Publication type:

Article

Monte Carlo simulation of the effect of silicon monoxide on silicon-nanocluster formation.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 891, doi. 10.1134/S1063782614070136

By:

Mikhantiev, E.;
Neizvestny, I.;
Usenkov, S.;
Shwartz, N.

Publication type:

Article

Calculation of the surface characteristics and pressures of InAs quantum dots in a GaAs matrix.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 905, doi. 10.1134/S1063782614070082

By:

Guba, S.;
Yuzevich, V.

Publication type:

Article

Application of photoluminescence spectroscopy to studies of InAlAs/InGaAs/GaAs metamorphic nanoheterostructures.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 883, doi. 10.1134/S1063782614070070

By:

Galiev, G.;
Vasil'evskii, I.;
Klimov, E.;
Klochkov, A.;
Lavruhin, D.;
Pushkarev, S.;
Maltsev, P.

Publication type:

Article

Effect of neutron irradiation on the structure of silicon p- n junctions of voltage limiters.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 935, doi. 10.1134/S1063782614070185

By:

Rakhmatov, A.

Publication type:

Article

Effect of thermal annealing and exposure to oxygen plasma on the properties of TiO-Si structures.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 961, doi. 10.1134/S1063782614070100

By:

Kalygina, V.;
Novikov, V.;
Petrova, Yu.;
Tolbanov, O.;
Chernikov, E.;
Tcupiy, S.;
Yaskevich, T.

Publication type:

Article

Generation of low-frequency higher harmonics in a resonant-tunneling diode.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 954, doi. 10.1134/S1063782614070045

By:

Elesin, V.;
Kateyev, I.;
Sukochev, A.;
Bezotosny, I.;
Bezhko, M.

Publication type:

Article

Features of electron transport in relaxed Si/SiGe transistor heterostructures with a high doping level.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 942, doi. 10.1134/S106378261407015X

By:

Orlov, M.;
Horvath, Zs.;
Ivina, N.;
Neverov, V.;
Orlov, L.

Publication type:

Article

Photoconductivity of CdS films, undoped and doped with alkali-metal impurity ions.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 864, doi. 10.1134/S1063782614070124

By:

Mayorova, T.;
Klyuev, V.;
Bezdetko, J.

Publication type:

Article

Relationship between the photocatalytic and photoluminescence properties of zinc oxide doped with copper and manganese.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 842, doi. 10.1134/S1063782614070173

By:

Pronin, I.;
Donkova, B.;
Dimitrov, D.;
Averin, I.;
Pencheva, J.;
Moshnikov, V.

Publication type:

Article

Analysis of the electrostatic interaction of charges in multiple InGaAs/GaAs quantum wells by admittance-spectroscopy methods.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 917, doi. 10.1134/S1063782614070227

By:

Zubkov, V.;
Yakovlev, I.;
Litvinov, V.;
Ermachihin, A.;
Kucherova, O.;
Cherkasova, V.

Publication type:

Article