Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 6
Results: 25
Chemical and phase composition of GaMnAs/GaAs/InGaAs spin light-emitting diodes.
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- Semiconductors, 2014, v. 48, n. 6, p. 815, doi. 10.1134/S1063782614060219
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Electrical properties of a SiC-Si multilayer structure.
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- Semiconductors, 2014, v. 48, n. 6, p. 792, doi. 10.1134/S1063782614060074
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Influence of the nonequilibrium-carrier concentration on the hall voltage in a p-type semiconductor.
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- Semiconductors, 2014, v. 48, n. 6, p. 772, doi. 10.1134/S1063782614060165
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Luminescence properties of thin nanocrystalline silicon-carbide films fabricated by direct-beam ion deposition.
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- Semiconductors, 2014, v. 48, n. 6, p. 711, doi. 10.1134/S1063782614060207
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Effect of ion-beam treatment during reactive high-frequency magnetron sputtering on macrostresses in ITO films.
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- Semiconductors, 2014, v. 48, n. 6, p. 743, doi. 10.1134/S1063782614060177
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Comparison of various methods for transferring graphene and few layer graphene grown by chemical vapor deposition to an insulating SiO/Si substrate.
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- Semiconductors, 2014, v. 48, n. 6, p. 804, doi. 10.1134/S1063782614060049
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On the diffusion growth mechanism of semiconductor nanowires with the participation of hot atoms.
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- Semiconductors, 2014, v. 48, n. 6, p. 821, doi. 10.1134/S1063782614060116
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Comparative investigation of InP/InGaAs heterostructure-emitter tunneling and superlattice bipolar transistors.
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- Semiconductors, 2014, v. 48, n. 6, p. 809, doi. 10.1134/S1063782614060244
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On InAsSbP epitaxial layers with ultimate phosphorus content, lattice-matched with an InAs substrate.
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- Semiconductors, 2014, v. 48, n. 6, p. 733, doi. 10.1134/S1063782614060220
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Optical properties and electronic structure of mercury iodide.
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- Semiconductors, 2014, v. 48, n. 6, p. 715, doi. 10.1134/S1063782614060232
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Role of samarium atoms in the formation of the structure of As-Se-S chalcogenide vitreous semiconductors.
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- Semiconductors, 2014, v. 48, n. 6, p. 796, doi. 10.1134/S1063782614060025
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Features of the spin-lattice relaxation of nuclear spins Cu in the CuAlO semiconductor compound.
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- Semiconductors, 2014, v. 48, n. 6, p. 779, doi. 10.1134/S1063782614060190
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Specific features of the low-temperature conductivity and photoconductivity of CuInSe-ZnInSe alloys.
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- Semiconductors, 2014, v. 48, n. 6, p. 727, doi. 10.1134/S1063782614060086
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Magnetoresistance of layered semiconductors upon the scattering of charge carriers at impurity ions in a parallel magnetic field.
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- Semiconductors, 2014, v. 48, n. 6, p. 748, doi. 10.1134/S1063782614060050
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Raman scattering in As-Se-S and As-Se-Te Chalcogenide vitreous semiconductors.
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- Semiconductors, 2014, v. 48, n. 6, p. 800, doi. 10.1134/S1063782614060037
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Properties of TiO films on silicon substrate.
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- Semiconductors, 2014, v. 48, n. 6, p. 739, doi. 10.1134/S1063782614060141
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Features of the two-component decomposition of monosilane molecules on a silicon surface under epitaxial-process conditions.
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- Semiconductors, 2014, v. 48, n. 6, p. 828, doi. 10.1134/S106378261406013X
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CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range.
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- Semiconductors, 2014, v. 48, n. 6, p. 767, doi. 10.1134/S1063782614060268
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On the possibility of spinodal decomposition in the transition layer of a heterostructure based on silicon-carbide polytypes.
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- Semiconductors, 2014, v. 48, n. 6, p. 701, doi. 10.1134/S1063782614060098
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On the size distribution in three-dimensional quantum-dot crystals.
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- Semiconductors, 2014, v. 48, n. 6, p. 783, doi. 10.1134/S1063782614060256
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Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra.
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- Semiconductors, 2014, v. 48, n. 6, p. 754, doi. 10.1134/S1063782614060128
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Change in the charge and defect-impurity state of silicon for solar-power engineering under the effect of a magnetic field.
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- Semiconductors, 2014, v. 48, n. 6, p. 722, doi. 10.1134/S1063782614060189
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Influence of the stark effect on the resonance excitation transfer between quantum dots.
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- Semiconductors, 2014, v. 48, n. 6, p. 760, doi. 10.1134/S1063782614060104
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Magnetic properties of (FeInS)(CuInS) single-crystal alloys.
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- Semiconductors, 2014, v. 48, n. 6, p. 705, doi. 10.1134/S1063782614060062
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On the photopleochroism coefficient and its temperature dynamics in native oxide- p-InSe heterojunctions.
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- Semiconductors, 2014, v. 48, n. 6, p. 776, doi. 10.1134/S1063782614060153
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