Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 4

Results: 26

Specific features of the sol-gel formation and optical properties of 3 d metal/porous silicon composites.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 551, doi. 10.1134/S1063782614040174
By:
- Lenshin, A.;
- Seredin, P.;
- Minakov, D.;
- Kashkarov, V.;
- Agapov, B.;
- Domashevskaya, E.;
- Kononova, I.;
- Moshnikov, V.;
- Terebova, N.;
- Shabanova, I.
Publication type:
Article
Morphological characteristics of grain boundaries in multicrystalline silicon.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 476, doi. 10.1134/S1063782614040228
By:
- Pescherova, S.;
- Nepomnyaschih, A.;
- Pavlova, L.;
- Eliseev, I.;
- Presnyakov, R.
Publication type:
Article
p-GaSb(Ox)/ n-GaSb native-oxide heterojunctions: Non-vacuum process and photoelectric properties.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 455, doi. 10.1134/S106378261404023X
By:
- Rud', V.;
- Rud', Yu.;
- Terukov, E.;
- Ushakova, T.;
- Il'chuk, G.
Publication type:
Article
Electrical properties of MOS diodes In/TiO/ p-CdTe.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 487, doi. 10.1134/S1063782614040071
By:
- Brus, V.;
- Ilashchuk, M.;
- Orletsky, I.;
- Maryanchuk, P.;
- Ulyanytskiy, K.
Publication type:
Article
Long-channel field-effect transistor with short-channel transistor properties.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 481, doi. 10.1134/S1063782614040137
By:
- Karimov, A.;
- Yodgorova, D.;
- Abdulkhaev, O.
Publication type:
Article
Structure and properties of electrodeposited films and film stacks for precursors of chalcopyrite and kesterite solar cells.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 521, doi. 10.1134/S1063782614040150
By:
- Klochko, N.;
- Khrypunov, G.;
- Volkova, N.;
- Kopach, V.;
- Momotenko, A.;
- Lyubov, V.
Publication type:
Article
On the polarization caused by bulk charges and the ionic conductivity in TlInSe crystals.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 427, doi. 10.1134/S1063782614040253
By:
- Sardarly, R.;
- Samedov, O.;
- Alieva, N.;
- Abdullayev, A.;
- Huseynov, E.;
- Hasanov, I.;
- Salmanov, F.
Publication type:
Article
On the thermal properties of AgTe and AgSe in the region of the phase transition.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 423, doi. 10.1134/S1063782614040058
By:
- Aliev, S.;
- Arasly, D.
Publication type:
Article
Analytical model of the electrical instability mechanism in multibarrier heterostructures with tunnel-opaque barriers.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 465, doi. 10.1134/S1063782614040113
By:
- Gergel, V.;
- Altukhov, I.;
- Verkhovtseva, A.;
- Galiev, G.;
- Gorshkova, N.;
- Zhigaltsov, S.;
- Zelenyi, A.;
- Il'ichev, E.;
- Minkin, V.;
- Paprotskij, S.;
- Yakupov, M.
Publication type:
Article
Formation of built-in potential in Si (100) crystals under microwave plasma treatment.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 511, doi. 10.1134/S1063782614040277
By:
- Yafarov, R.
Publication type:
Article
Effect of the tin impurity on the energy spectrum and photoelectric properties of nanostructured InO films.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 451, doi. 10.1134/S1063782614040083
By:
- Drozdov, K.;
- Krylov, I.;
- Irkhina, A.;
- Vasiliev, R.;
- Rumyantseva, M.;
- Gaskov, A.;
- Ryabova, L.;
- Khokhlov, D.
Publication type:
Article
Thermoelectric efficiency of intermetallic compound ZnSb.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 432, doi. 10.1134/S1063782614040095
By:
- Fedorov, M.;
- Prokofieva, L.;
- Ravich, Yu.;
- Konstantinov, P.;
- Pshenay-Severin, D.;
- Shabaldin, A.
Publication type:
Article
Defect formation and recrystallization mechanisms in silicon-on-sapphire films under ion irradiation.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 517, doi. 10.1134/S1063782614040265
By:
- Shemukhin, A.;
- Balakshin, Y.;
- Chernysh, V.;
- Golubkov, S.;
- Egorov, N.;
- Sidorov, A.
Publication type:
Article
Features of the band structure of (CuInSe)(MeSe) alloys (Me = Mn, Fe).
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 417, doi. 10.1134/S1063782614040101
By:
- Hasanli, Sh.;
- Basalaev, Yu.;
- Samedova, U.
Publication type:
Article
Properties of ZnCoO films produced by pulsed laser deposition with fast particle separation.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 538, doi. 10.1134/S1063782614040186
By:
- Lotin, A.;
- Novodvorsky, O.;
- Rylkov, V.;
- Zuev, D.;
- Khramova, O.;
- Pankov, M.;
- Aronzon, B.;
- Semisalova, A.;
- Perov, N.;
- Lashkul, A.;
- Lahderanta, E.;
- Panchenko, V.
Publication type:
Article
Effect of low-temperature annealing on the quality of InSe layered single crystals and the characteristics of n-InSe/ p-InSe heterojunctions.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 545, doi. 10.1134/S1063782614040149
By:
- Khandozhko, V.;
- Kudrynskyi, Z.;
- Kovalyuk, Z.
Publication type:
Article
Study of GaInP solar-cell interfaces by variable-flux spectral measurements.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 459, doi. 10.1134/S1063782614040216
By:
- Morozov, I.;
- Gudovskikh, A.
Publication type:
Article
Current flow through metal shunts in ohmic contacts to n-Si.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 492, doi. 10.1134/S1063782614040241
By:
- Sachenko, A.;
- Belyaev, A.;
- Pilipenko, V.;
- Petlitskaya, T.;
- Anischik, V.;
- Boltovets, N.;
- Konakova, R.;
- Kudryk, Ya.;
- Vinogradov, A.;
- Sheremet, V.
Publication type:
Article
Light emission from tin-dioxide crystals.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 442, doi. 10.1134/S1063782614040034
By:
- Agekian, V.;
- Serov, A.;
- Filosofov, N.
Publication type:
Article
Nonlinear optical effect upon the irradiation of GaN with cluster ions.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 446, doi. 10.1134/S1063782614040125
By:
- Karaseov, P.;
- Karabeshkin, K.;
- Titov, A.;
- Shilov, V.;
- Ermolaeva, G.;
- Maslov, V.;
- Orlova, A.
Publication type:
Article
Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 501, doi. 10.1134/S106378261404006X
By:
- Babichev, A.;
- Lazarenko, A.;
- Nikitina, E.;
- Pirogov, E.;
- Sobolev, M.;
- Egorov, A.
Publication type:
Article
Electrodeposited zinc oxide arrays with the moth-eye effect.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 531, doi. 10.1134/S1063782614040162
By:
- Klochko, N.;
- Khrypunov, G.;
- Myagchenko, Y.;
- Melnychuk, E.;
- Kopach, V.;
- Klepikova, K.;
- Lyubov, V.;
- Kopach, A.
Publication type:
Article
Composite materials based on nanostructured zinc oxide.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 471, doi. 10.1134/S1063782614040022
By:
- Abdullin, Kh.;
- Bakranov, N.;
- Ismailov, D.;
- Kalkozova, J.;
- Kumekov, S.;
- Podrezova, L.;
- Cicero, G.
Publication type:
Article
Model of the behavior of MOS structures under ionizing irradiation.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 505, doi. 10.1134/S1063782614040046
By:
- Aleksandrov, O.
Publication type:
Article
Electrical properties of MOS capacitors formed by PEALD grown AlO on silicon.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 497, doi. 10.1134/S1063782614040204
By:
- Mahajan, A.;
- Khairnar, A.;
- Thibeault, B.
Publication type:
Article
Calculation of the electron mobility for the Δ model of the conduction band of germanium single crystals.
Published in:
Semiconductors, 2014, v. 48, n. 4, p. 438, doi. 10.1134/S1063782614040198
By:
- Luniov, S.;
- Nazarchuk, P.;
- Burban, O.
Publication type:
Article