Influence of cation-vacancy imperfection on the electrical and photoelectric properties of the CuZnInS alloy.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 286, doi. 10.1134/S1063782614030191
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 3
Results: 25
1
2
Doping of silicon with selenium by diffusion from the gas phase.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 413, doi. 10.1134/S1063782614030038
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- Publication type:
- Article
3
Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 381, doi. 10.1134/S1063782614030154
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- Publication type:
- Article
4
Plasma resonance in PbAgTe alloys.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 299, doi. 10.1134/S1063782614030245
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- Publication type:
- Article
5
Optimization of carrier mobility in luminescence layers based on europium β-diketonates in hybrid light-emitting structures.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 369, doi. 10.1134/S1063782614030051
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- Publication type:
- Article
6
Electron-phonon interaction in short-period (GaAs)(AlAs) (001) superlattices.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 320, doi. 10.1134/S1063782614030129
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- Publication type:
- Article
7
Interface recombination velocity measurement in SiO/Si.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 302, doi. 10.1134/S1063782614030130
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- Publication type:
- Article
8
On the field effect in thin films of semiconductors with Kane's charge-carrier dispersion relation.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 312, doi. 10.1134/S1063782614030117
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- Publication type:
- Article
9
Thermally activated resonance tunneling in asymmetric systems of CdSe/ZnSe double quantum wells with self-assembled quantum dots.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 332, doi. 10.1134/S1063782614030221
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- Publication type:
- Article
10
Magnetic susceptibility of BiSbTe (0 < x ≤ 1) crystals in the intrinsic conductivity region.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 281, doi. 10.1134/S1063782614030257
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- Publication type:
- Article
11
Organic light-emitting devices with multi-shell quantum dots connected with polythiophene derivatives.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 377, doi. 10.1134/S1063782614030269
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- Publication type:
- Article
12
SiGe/Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 402, doi. 10.1134/S1063782614030099
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- Publication type:
- Article
13
Photoelectric properties of an injection photodetector based on alloys of II-VI compounds.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 354, doi. 10.1134/S1063782614030178
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- Publication type:
- Article
14
Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 392, doi. 10.1134/S1063782614030166
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- Publication type:
- Article
15
On the application of thin films of silicon nanoparticles for increasing solar cell efficiency.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 360, doi. 10.1134/S1063782614030105
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- Publication type:
- Article
16
Formation of Ta/Ti/Al/Mo/Au ohmic contacts to an AlGaN/AlN/GaN heterostructure grown on a silicon substrate.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 387, doi. 10.1134/S1063782614030208
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- Publication type:
- Article
17
Effect of fluorine on the electrical properties of anodic oxide/InAs(111)A interface.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 307, doi. 10.1134/S1063782614030026
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- Publication type:
- Article
18
Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 373, doi. 10.1134/S1063782614030233
- By:
- Publication type:
- Article
19
Effect of features of the technology of polycrystalline CdTe growth on the conductivity and deep level spectrum after annealing.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 406, doi. 10.1134/S106378261403004X
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- Publication type:
- Article
20
Study of the electrical properties of individual (Ga,Mn)As nanowires.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 344, doi. 10.1134/S1063782614030075
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- Publication type:
- Article
21
Peculiarities of the electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration in the two-dimensional channel.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 338, doi. 10.1134/S1063782614030142
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- Publication type:
- Article
22
Effect of annealing in liquid cadmium upon photoluminescence in polycrystalline cadmium telluride grown under nonequilibrium conditions.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 292, doi. 10.1134/S106378261403021X
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- Publication type:
- Article
23
Features of the dark conductivity of zinc selenide.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 273, doi. 10.1134/S1063782614030087
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- Publication type:
- Article
24
On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 350, doi. 10.1134/S106378261403018X
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- Publication type:
- Article
25
Formation of two-layer composite-on-insulator structures based on porous silicon and SnO. Study of their electrical and gas-sensing properties.
- Published in:
- Semiconductors, 2014, v. 48, n. 3, p. 397, doi. 10.1134/S1063782614030063
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- Publication type:
- Article