Works matching IS 10637826 AND DT 2014 AND VI 48 AND IP 2

Results: 28

Optical absorption of vanadium in ZnSe single crystals.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 142, doi. 10.1134/S1063782614020213

By:

Nitsuk, Yu.

Publication type:

Article

Impact ionization of excitons in single-crystal silicon and its effect on the exciton concentration and luminescence near the fundamental absorption edge.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 178, doi. 10.1134/S1063782614020080

By:

Emel'yanov, A.

Publication type:

Article

Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 184, doi. 10.1134/S1063782614020067

By:

Bryantseva, T.;
Lybchenko, D.;
Lybchenko, V.;
Markov, I.;
Markov, R.

Publication type:

Article

Trions in silicon nanocrystals in an amorphous hydrogenated silicon matrix.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 235, doi. 10.1134/S1063782614020043

By:

Belolipetskiy, A.;
Gusev, O.;
Dmitriev, A.;
Terukov, E.;
Yassievich, I.

Publication type:

Article

Anomalies in the thermal and electrical conductivity of CuInSe crystals.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 152, doi. 10.1134/S1063782614020171

By:

Mygal, V.;
But, A.;
Bodnar, I.

Publication type:

Article

Specific features of the charge carrier mobility in nanowires in transverse electric and magnetic fields.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 216, doi. 10.1134/S1063782614020250

By:

Sinyavskii, E.;
Karapetyan, S.

Publication type:

Article

Determination of the composition of multicomponent chalcogenide semiconductors by X-ray fluorescence analysis.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 257, doi. 10.1134/S1063782614020055

By:

Bordovskii, G.;
Marchenko, A.;
Nikolaeva, A.;
Seregin, P.;
Terukov, E.

Publication type:

Article

Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 195, doi. 10.1134/S1063782614020134

By:

Izhnin, I.;
Izhnin, A.;
Mynbaev, K.;
Bazhenov, N.;
Fitsych, E.;
Yakushev, M.;
Mikhailov, N.;
Varavin, V.;
Dvoretsky, S.

Publication type:

Article

Isotype surface-barrier n-TiN/ n-Si heterostructure.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 219, doi. 10.1134/S1063782614020274

By:

Solovan, M.;
Brus, V.;
Maryanchuk, P.

Publication type:

Article

Photosensitivity of structures with quantum wells under normal radiation incidence.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 212, doi. 10.1134/S106378261402016X

By:

Kulikov, V.;
Chaly, V.

Publication type:

Article

Role of charged defects in the photoconductivity of SeAs chalcogenide glassy semiconductor with the EuF impurity.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 148, doi. 10.1134/S1063782614020122

By:

Isayev, A.;
Mekhtiyeva, S.;
Garibova, S.;
Zeynalov, V.

Publication type:

Article

Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 245, doi. 10.1134/S1063782614020262

By:

Solomonov, A.;
Tarasov, S.;
Men'kovich, E.;
Lamkin, I.;
Kurin, S.;
Antipov, A.;
Barash, I.;
Roenkov, A.;
Helava, H.;
Makarov, Yu.

Publication type:

Article

Effect of exposure to optical radiation and temperature on the electrical and optical properties of InO films produced by autowave oxidation.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 207, doi. 10.1134/S1063782614020286

By:

Tambasov, I.;
Myagkov, V.;
Ivanenko, A.;
Bykova, L.;
Yozhikova, E.;
Maksimov, I.;
Ivanov, V.

Publication type:

Article

Features of the transformation of the exciton cathodoluminescence spectra of CdSe epitaxial layers with increasing excitation level.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 191, doi. 10.1134/S1063782614020237

By:

Senokosov, E.;
Chukita, V.;
Odin, I.;
Chukichev, M.

Publication type:

Article

Effect of ion doping on the dislocation-related photoluminescence in Si-implanted silicon.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 199, doi. 10.1134/S1063782614020183

By:

Mikhaylov, A.;
Belov, A.;
Korolev, D.;
Timofeeva, A.;
Vasiliev, V.;
Shushunov, A.;
Bobrov, A.;
Pavlov, D.;
Tetelbaum, D.;
Shek, E.

Publication type:

Article

Synthesis of thin p-type rutile films.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 251, doi. 10.1134/S1063782614020110

By:

Ievlev, V.;
Kushev, S.;
Ovchinnikov, O.;
Sumez, M.;
Latyshev, A.;
Bezryadin, M.;
Leonova, L.;
Kannykin, S.;
Vozgorkov, A.;
Smirnov, M.

Publication type:

Article

Optical and electrical properties of 4 H-SiC irradiated with Xe ions.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 156, doi. 10.1134/S1063782614020146

By:

Kalinina, E.;
Chuchvaga, N.;
Bogdanova, E.;
Strel'chuk, A.;
Shustov, D.;
Zamoryanskaya, M.;
Skuratov, V.

Publication type:

Article

Raman scattering in PbTe and PbSnTe films: In situ phase transformations.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 173, doi. 10.1134/S1063782614020298

By:

Volodin, V.;
Sinyukov, M.;
Shcheglov, D.;
Latyshev, A.;
Fedosenko, E.

Publication type:

Article

Comparative photoelectric characteristics of nanostructured PbSnSe films obtained by the codeposition and layer-by-layer deposition of PbSe and SnSe.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 263, doi. 10.1134/S1063782614020195

By:

Mukhamedzyanov, H.;
Markov, V.;
Maskaeva, L.

Publication type:

Article

Investigations of the kinetics of nonequilibrium carriers in a semiconductor by the average value of the photoconductivity under periodic optical excitation.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 163, doi. 10.1134/S1063782614020079

By:

Denisov, B.;
Nikishin, E.

Publication type:

Article

Electron-phonon processes in semiconductors at low temperatures.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 167, doi. 10.1134/S106378261402002X

By:

Aliev, S.

Publication type:

Article

Effect of annealing on the electrical properties of PbMnTe single crystals with excess tellurium.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 139, doi. 10.1134/S1063782614020031

By:

Bagiyeva, G.;
Abdinova, G.;
Mustafayev, N.;
Abdinov, D.

Publication type:

Article

Chemical vapor deposition of isolated spherical diamond particles with embedded silicon-vacancy color centers onto the surface of synthetic opal.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 268, doi. 10.1134/S1063782614020109

By:

Grudinkin, S.;
Feoktistov, N.;
Bogdanov, K.;
Baranov, M.;
Baranov, A.;
Fedorov, A.;
Golubev, V.

Publication type:

Article

Inelastic electron scattering cross-section spectroscopy of GeSi nanoheterostructures.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 224, doi. 10.1134/S1063782614020225

By:

Parshin, A.;
P'yanovskaya, E.;
Pchelyakov, O.;
Mikhlin, Yu.;
Nikiforov, A.;
Timofeev, V.;
Esin, M.

Publication type:

Article

Dielectric properties of MnGaS single crystals in an alternating electric field.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 204, doi. 10.1134/S1063782614020201

By:

Niftiev, N.;
Tagiev, O.;
Muradov, M.;
Mamedov, F.

Publication type:

Article

Electron spin polarization and longitudinal autosoliton current in p-InSb in a longitudinal magnetic field.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 135, doi. 10.1134/S1063782614020158

By:

Kamilov, I.;
Stepurenko, A.;
Gummetov, A.

Publication type:

Article

On the effect of electron-phonon interaction on the temperature dependences of magnetotransport in quantum hall systems.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 228, doi. 10.1134/S1063782614020092

By:

Greshnov, A.;
Beltukov, Y.

Publication type:

Article

Effect of bremsstrahlung γ-ray photons and neutrons on the parameters of indium-selenium photoconverters.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 239, doi. 10.1134/S1063782614020249

By:

Sydor, O.;
Kovalyuk, Z.;
Dubinko, V.

Publication type:

Article