Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 12

Results: 22

Photo- and electroluminescence from semiconductor colloidal quantum dots in organic matrices: QD-OLED.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1567, doi. 10.1134/S1063782613120208

By:

Vitukhnovskii, A. G.;
Vaschenko, A. A.;
Bychkovskii, D. N.;
Dirin, D. N.;
Tananaev, P. N.;
Vakshtein, M. S.;
Korzhonov, D. A.

Publication type:

Article

Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1556, doi. 10.1134/S1063782613120221

By:

Yunin, P. A.;
Drozdov, Yu. N.;
Drozdov, M. N.;
Korolev, S. A.;
Lobanov, D. N.

Publication type:

Article

Magnetoabsorption in narrow-gap HgCdTe epitaxial layers in the terahertz range.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1545, doi. 10.1134/S1063782613120099

By:

Ikonnikov, A. V.;
Zholudev, M. S.;
Gavrilenko, V. I.;
Mikhailov, N. N.;
Dvoretskii, S. A.

Publication type:

Article

Anisotropy of the solid-state epitaxy of silicon carbide in silicon.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1551, doi. 10.1134/S1063782613120129

By:

Kukushkin, S. A.;
Osipov, A. V.

Publication type:

Article

Laterally localizing potential as a tool for controlling the electron spin relaxation time in GaAs quantum wells.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1598, doi. 10.1134/S1063782613120142

By:

Larionov, A. V.;
Il’in, A. I.

Publication type:

Article

Simulation of the absorption of a femtosecond laser pulse in crystalline silicon.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1616, doi. 10.1134/S1063782613120075

By:

Guk, I. V.;
Martsinovsky, G. A.;
Shandybina, G. D.;
Yakovlev, E. B.

Publication type:

Article

Lateral photoconductivity in structures with Ge/Si quantum dots.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1574, doi. 10.1134/S1063782613120154

By:

Panevin, V. Yu.;
Sofronov, A. N.;
Vorobjev, L. E.;
Firsov, D. A.;
Shalygin, V. A.;
Vinnichenko, M. Ya.;
Balagula, R. M.;
Tonkikh, A. A.;
Werner, P.;
Fuhrman, B.;
Schmidt, G.

Publication type:

Article

Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1583, doi. 10.1134/S106378261312021X

By:

Volkova, N. S.;
Gorshkov, A. P.;
Zdoroveishchev, A. V.;
Vikhrova, O. V.;
Zvonkov, B. N.

Publication type:

Article

Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1610, doi. 10.1134/S1063782613140017

By:

Khan, Majid;
Islam, Mohammad

Publication type:

Article

Growth model of silicon nanoislands on sapphire.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1595, doi. 10.1134/S1063782613120117

By:

Krivulin, N. O.;
Pavlov, D. A.;
Shilyaev, P. A.

Publication type:

Article

Fabrication and study of <i>p-n</i> structures with crystalline inclusions in the space-charge region.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1652, doi. 10.1134/S1063782613120105

By:

Kalinovsky, V. S.;
Levin, R. V.;
Pushniy, B. V.;
Mizerov, M. N.;
Rumyantsev, V. D.;
Andreev, V. M.

Publication type:

Article

Biexcitons formed from spatially separated electrons and holes in quasi-zero-dimensional semiconductor nanosystems.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1626, doi. 10.1134/S1063782613120178

By:

Pokutnyi, S. I.

Publication type:

Article

Dynamic characteristics of double-barrier nanostructures with asymmetric barriers of finite height and widths in a strong ac electric field.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1641, doi. 10.1134/S1063782613120051

By:

Chuenkov, V. A.

Publication type:

Article

Two-dimensional semimetal in wide HgTe quantum wells: Charge-carrier energy spectrum and magnetotransport.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1562, doi. 10.1134/S1063782613120063

By:

Germanenko, A. V.;
Minkov, G. M.;
Rut, O. E.;
Sherstobitov, A. A.;
Dvoretsky, S. A.;
Mikhailov, N. N.

Publication type:

Article

Study of heterostructures with a combined In(Ga)As/GaAs quantum dot/quantum well layer and a Mn δ layer.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1591, doi. 10.1134/S1063782613120166

By:

Pavlova, E. D.;
Gorshkov, A. P.;
Bobrov, A. I.;
Malekhonova, N. V.;
Zvonkov, B. N.

Publication type:

Article

Structural studies of a ferromagnetic GaMnSb layer.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1587, doi. 10.1134/S1063782613120038

By:

Bobrov, A. I.;
Pavlova, E. D.;
Kudrin, A. V.;
Malekhonova, N. V.

Publication type:

Article

Quasi-elastic and inelastic approximations in the description of the charge carrier dynamics in diamond.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1604, doi. 10.1134/S1063782613120026

By:

Belousov, Yu. M.;
Soloviev, V. R.;
Chernousov, I. V.

Publication type:

Article

Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1570, doi. 10.1134/S1063782613120191

By:

Usikova, A. A.;
Il’inskaya, N. D.;
Matveev, B. A.;
Shubina, T. V.;
Kop’ev, P. S.

Publication type:

Article

Spectral dependence of the linewidth enhancement factor in quantum dot lasers.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1656, doi. 10.1134/S1063782613120233

By:

Zubov, F. I.;
Shernyakov, Yu. M.;
Maximov, M. V.;
Zhukov, A. E.;
Livshits, D. A.;
Payusov, A. S.;
Nadtochiy, A. M.;
Savelyev, A. V.;
Kryzhanovskaya, N. V.;
Gordeev, N. Yu.

Publication type:

Article

Ab initio calculations of the electronic structure of silicon nanocrystals doped with shallow donors (Li, P)

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1578, doi. 10.1134/S1063782613120130

By:

Kurova, N. V.;
Burdov, V. A.

Publication type:

Article

Study of the photocatalytic and sensor properties of ZnO/SiO<sub>2</sub> nanocomposite layers.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1636, doi. 10.1134/S106378261312004X

By:

Bozhinova, A. S.;
Kaneva, N. V.;
Kononova, I. E.;
Nalimova, S. S.;
Syuleiman, Sh. A.;
Papazova, K. I.;
Dimitrov, D. Ts.;
Moshnikov, V. A.;
Terukov, E. I.

Publication type:

Article

Study of the polarizations of (Al,Ga,AlGa)N nitride compounds and the charge density of various interfaces based on them.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1621, doi. 10.1134/S106378261312018X

By:

Supryadkina, I. A.;
Abgaryan, K. K.;
Bazhanov, D. I.;
Mutigullin, I. V.

Publication type:

Article