Spin-polarized currents in the tunnel contact of a normal conductor and a two-dimensional topological insulator.
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- Semiconductors, 2013, v. 47, n. 11, p. 1456, doi. 10.1134/S1063782613110213
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- Article
Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 11
Results: 23
1
2
Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix.
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- Semiconductors, 2013, v. 47, n. 11, p. 1523, doi. 10.1134/S1063782613110171
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- Article
3
Specific features of the spectra and relaxation kinetics of long-wavelength photoconductivity in narrow-gap HgCdTe epitaxial films and heterostructures with quantum wells.
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- Semiconductors, 2013, v. 47, n. 11, p. 1438, doi. 10.1134/S1063782613110183
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- Article
4
Features of impurity photoconductivity in Si:Er/Si epitaxial diodes.
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- Semiconductors, 2013, v. 47, n. 11, p. 1500, doi. 10.1134/S1063782613110043
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- Article
5
Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures.
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- Semiconductors, 2013, v. 47, n. 11, p. 1496, doi. 10.1134/S1063782613110249
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- Article
6
Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices.
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- Semiconductors, 2013, v. 47, n. 11, p. 1478, doi. 10.1134/S1063782613110080
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- Article
7
Effect of spin-orbit coupling on the structure of the electron ground state in silicon nanocrystals.
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- Semiconductors, 2013, v. 47, n. 11, p. 1508, doi. 10.1134/S1063782613110110
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- Article
8
Efficient electro-optic semiconductor medium based on type-II heterostructures.
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- Semiconductors, 2013, v. 47, n. 11, p. 1528, doi. 10.1134/S1063782613110201
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- Article
9
Metastable-state formation as a possible mechanism for the conductance anomalies in mesoscopic structures.
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- Semiconductors, 2013, v. 47, n. 11, p. 1465, doi. 10.1134/S1063782613110195
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- Article
10
Exciton condensation in microcavities under three-dimensional quantization conditions.
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- Semiconductors, 2013, v. 47, n. 11, p. 1492, doi. 10.1134/S1063782613110109
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- Article
11
Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells.
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- Semiconductors, 2013, v. 47, n. 11, p. 1447, doi. 10.1134/S1063782613110055
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- Article
12
Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs.
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- Semiconductors, 2013, v. 47, n. 11, p. 1475, doi. 10.1134/S106378261311002X
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- Article
13
Investigation of the transition layer in 3 C-SiC/6 H-SiC heterostructures.
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- Semiconductors, 2013, v. 47, n. 11, p. 1539, doi. 10.1134/S1063782613110134
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- Publication type:
- Article
14
Simulation of ultraviolet- and soft X-ray-pulse generation as a result of cooperative recombination of excitons in diamond nanocrystals embedded in a polymer film.
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- Semiconductors, 2013, v. 47, n. 11, p. 1442, doi. 10.1134/S1063782613110122
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- Article
15
Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy.
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- Semiconductors, 2013, v. 47, n. 11, p. 1481, doi. 10.1134/S1063782613110079
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- Article
16
Pseudomorphic GeSn/Ge (001) heterostructures.
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- Semiconductors, 2013, v. 47, n. 11, p. 1452, doi. 10.1134/S1063782613110225
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- Article
17
Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface δ-doping.
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- Semiconductors, 2013, v. 47, n. 11, p. 1470, doi. 10.1134/S106378261311016X
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- Article
18
Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 μm.
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- Semiconductors, 2013, v. 47, n. 11, p. 1504, doi. 10.1134/S1063782613110158
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- Article
19
Generation of coherent terahertz radiation by polarized electron-hole pairs in GaAs/AlGaAs quantum wells.
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- Semiconductors, 2013, v. 47, n. 11, p. 1433, doi. 10.1134/S1063782613110031
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- Publication type:
- Article
20
Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells.
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- Semiconductors, 2013, v. 47, n. 11, p. 1513, doi. 10.1134/S1063782613110237
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- Article
21
Relaxation kinetics of impurity photoconductivity in p-Si:B with various levels of doping and degrees of compensation in high electric fields.
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- Semiconductors, 2013, v. 47, n. 11, p. 1461, doi. 10.1134/S1063782613110146
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- Article
22
Features of the electroluminescence spectra of quantum-confined silicon p- n heterojunctions in the infrared spectral region.
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- Semiconductors, 2013, v. 47, n. 11, p. 1517, doi. 10.1134/S1063782613110067
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- Article
23
Rashba spin splitting and cyclotron resonance in strained InGaAs/InP heterostructures with a two-dimensional electron gas.
- Published in:
- Semiconductors, 2013, v. 47, n. 11, p. 1485, doi. 10.1134/S1063782613110092
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- Publication type:
- Article