Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 9

Results: 25

Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1267, doi. 10.1134/S1063782613090236
By:
- Shustov, D. B.;
- Lebedev, A. A.;
- Lebedev, S. P.;
- Nelson, D. K.;
- Sitnikova, A. A.;
- Zamoryanskaya, M. V.
Publication type:
Article
Local triboelectrification of an n-GaAs surface using the tip of an atomic-force microscope.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1170, doi. 10.1134/S1063782613090054
By:
- Brunkov, P. N.;
- Goncharov, V. V.;
- Rudinsky, M. E.;
- Gutkin, A. A.;
- Gordeev, N. Yu.;
- Lantratov, V. M.;
- Kalyuzhnyy, N. A.;
- Mintairov, S. A.;
- Sokolov, R. V.;
- Konnikov, S. G.
Publication type:
Article
Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1185, doi. 10.1134/S1063782613090170
By:
- Nevedomskiy, V. N.;
- Bert, N. A.;
- Chaldyshev, V. V.;
- Preobrazhenskiy, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article
Electrical and optical properties of Mn-doped Hg3In2Te6 crystals.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1141, doi. 10.1134/S1063782613090078
By:
- Grushka, O. G.;
- Chupyra, S. M.;
- Mysliuk, O. M.;
- Bilichuk, S. V.;
- Koziarskyi, D. P.
Publication type:
Article
Properties of silicon films grown under different pressures in a plasma-forming system.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1264, doi. 10.1134/S1063782613090169
By:
- Mitin, D. M.;
- Serdobintsev, A. A.
Publication type:
Article
Analysis of light-induced degradation mechanisms in α-Si:H/μc-Si:H solar photovoltaics.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1252, doi. 10.1134/S1063782613090066
By:
- Emelyanov, V. M.;
- Abramov, A. S.;
- Bobyl, A. V.;
- Verbitsky, V. N.;
- Gudovskikh, A. S.;
- Ershenko, E. M.;
- Kudryashov, S. A.;
- Terukov, E. I.;
- Chosta, O. I.;
- Shvarts, M. Z.
Publication type:
Article
Features of conduction mechanisms in n-HfNiSn semiconductor heavily doped with a Rh acceptor impurity.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1145, doi. 10.1134/S1063782613090200
By:
- Romaka, V. A.;
- Rogl, P.;
- Stadnyk, Yu. V.;
- Romaka, V. V.;
- Hlil, E. K.;
- Krajovskii, V. Ya.;
- Horyn, A. M.
Publication type:
Article
Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1180, doi. 10.1134/S1063782613090212
By:
- Sachenko, A. V.;
- Belyaev, A. E.;
- Boltovets, N. S.;
- Zhilyaev, Yu. V.;
- Kapitanchuk, L. M.;
- Klad’ko, V. P.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Naumov, A. V.;
- Panteleev, V. N.;
- Sheremet, V. N.
Publication type:
Article
Photocurrent in a quantum channel with an impurity.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1209, doi. 10.1134/S1063782613090145
By:
- Margulis, V. A.;
- Pyataev, M. A.;
- Ulyanov, S. N.
Publication type:
Article
Analytical one-dimensional current-voltage model for FD SOI MOSFETs including the effect of substrate depletion.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1224, doi. 10.1134/S1063782613090182
By:
- Pandey, Rahul;
- Dutta, Aloke K.
Publication type:
Article
Excitonic structure formation in the photoconductivity spectra of CdS crystals at modulated excitation.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1153, doi. 10.1134/S1063782613090042
By:
- Batyrev, A. S.;
- Bisengaliev, R. A.;
- Novikov, B. V.;
- Tagirov, M. O.
Publication type:
Article
Emission intensity in the visible and IR spectral ranges from Si-based structures formed by direct bonding with simultaneous doping with erbium (Er) and europium (Eu)
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1193, doi. 10.1134/S1063782613090157
By:
- Mezdrogina, M. M.;
- Kostina, L. S.;
- Beliakova, E. I.;
- Kuzmin, R. V.
Publication type:
Article
Electrical and photoelectric properties of anisotype n-TiN/p-Si heterojunctions.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1174, doi. 10.1134/S1063782613090248
By:
- Solovan, M. M.;
- Brus, V. V.;
- Maryanchuk, P. D.
Publication type:
Article
Electrical properties of zinc-sulfide films produced by close-spaced vacuum sublimation.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1164, doi. 10.1134/S1063782613090121
By:
- Kurbatov, D. I.
Publication type:
Article
Optical orientation of electrons in compensated semiconductors.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1232, doi. 10.1134/S106378261309011X
By:
- Kokurin, I. A.;
- Petrov, P. V.;
- Averkiev, N. S.
Publication type:
Article
Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1203, doi. 10.1134/S106378261309008X
By:
- Khabibullin, R. A.;
- Galiev, G. B.;
- Klimov, E. A.;
- Ponomarev, D. S.;
- Vasil’evskii, I. S.;
- Kulbachinskii, V. A.;
- Bokov, P. Yu.;
- Avakyants, L. P.;
- Chervyakov, A. V.;
- Maltsev, P. P.
Publication type:
Article
Quantum self-consistent calculation of the differential capacitance of a semiconductor film.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1157, doi. 10.1134/S106378261309025X
By:
- Tsurikov, D. E.;
- Yafyasov, A. M.
Publication type:
Article
Effect of electromagnetic radiation on an array of weakly interacting carbon nanotubes in the presence of nanosecond pulses.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1246, doi. 10.1134/S1063782613090224
By:
- Sadykov, N. R.;
- Scorkin, N. A.;
- Akhljustina, E. A.
Publication type:
Article
Structural transformation of macroporous silicon anodes as a result of cyclic lithiation processes.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1275, doi. 10.1134/S1063782613090133
By:
- Li, G. V.;
- Kulova, T. L.;
- Tolmachev, V. A.;
- Chernienko, A. V.;
- Baranov, M. A.;
- Pavlov, S. I.;
- Astrova, E. V.;
- Skundin, A. M.
Publication type:
Article
Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1219, doi. 10.1134/S1063782613090261
By:
- Zvonkov, B. N.;
- Nekorkin, S. M.;
- Vikhrova, O. V.;
- Dikareva, N. V.
Publication type:
Article
Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1271, doi. 10.1134/S1063782613090108
By:
- Khenkin, M. V.;
- Emelyanov, A. V.;
- Kazanskii, A. G.;
- Forsh, P. A.;
- Kashkarov, P. K.;
- Terukov, E. I.;
- Orekhov, D. L.;
- Roca i Cabarrocas, P.
Publication type:
Article
Anisotropy of the electron g factor in quantum wells based on cubic semiconductors.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1241, doi. 10.1134/S1063782613090029
By:
- Alekseev, P. S.
Publication type:
Article
Suppression of electron magnetotunneling between parallel two-dimensional GaAs/InAs electron systems by the correlation interaction.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1215, doi. 10.1134/S1063782613090091
By:
- Khanin, Yu. N.;
- Vdovin, E. E.;
- Makarovsky, O.;
- Henini, M.
Publication type:
Article
High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1258, doi. 10.1134/S1063782613090194
By:
- Petukhov, A. A.;
- Zhurtanov, B. E.;
- Kalinina, K. V.;
- Stoyanov, N. D.;
- Salikhov, H. M.;
- Mikhailova, M. P.;
- Yakovlev, Yu. P.
Publication type:
Article
Atomic-force microscopy and photoluminescence of nanostructured CdTe.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1198, doi. 10.1134/S1063782613090030
By:
- Babentsov, V.;
- Sizov, F.;
- Franc, J.;
- Luchenko, A.;
- Svezhentsova, E.;
- Tsybrii, Z.
Publication type:
Article

Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 9

Comparative study of 3<i>C</i>-SiC layers sublimation-grown on a 6<i>H</i>-SiC substrate.

Local triboelectrification of an <i>n</i>-GaAs surface using the tip of an atomic-force microscope.

Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier.

Electrical and optical properties of Mn-doped Hg<sub>3</sub>In<sub>2</sub>Te<sub>6</sub> crystals.

Properties of silicon films grown under different pressures in a plasma-forming system.

Analysis of light-induced degradation mechanisms in α-Si:H/μ<i>c</i>-Si:H solar photovoltaics.

Features of conduction mechanisms in <i>n</i>-HfNiSn semiconductor heavily doped with a Rh acceptor impurity.

Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density.

Photocurrent in a quantum channel with an impurity.

Analytical one-dimensional current-voltage model for FD SOI MOSFETs including the effect of substrate depletion.

Excitonic structure formation in the photoconductivity spectra of CdS crystals at modulated excitation.

Emission intensity in the visible and IR spectral ranges from Si-based structures formed by direct bonding with simultaneous doping with erbium (Er) and europium (Eu)

Electrical and photoelectric properties of anisotype <i>n</i>-TiN/<i>p</i>-Si heterojunctions.

Electrical properties of zinc-sulfide films produced by close-spaced vacuum sublimation.

Optical orientation of electrons in compensated semiconductors.

Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths.

Quantum self-consistent calculation of the differential capacitance of a semiconductor film.

Effect of electromagnetic radiation on an array of weakly interacting carbon nanotubes in the presence of nanosecond pulses.

Structural transformation of macroporous silicon anodes as a result of cyclic lithiation processes.

Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well.

Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties.

Anisotropy of the electron <i>g</i> factor in quantum wells based on cubic semiconductors.

Suppression of electron magnetotunneling between parallel two-dimensional GaAs/InAs electron systems by the correlation interaction.

High-temperature luminescence in an <i>n</i>-GaSb/<i>n</i>-InGaAsSb/<i>p</i>-AlGaAsSb light-emitting heterostructure with a high potential barrier.

Atomic-force microscopy and photoluminescence of nanostructured CdTe.