850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1075, doi. 10.1134/S1063782613080204
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 8
Results: 21
1
2
Transient processes in high-voltage silicon carbide bipolar-junction transistors.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1068, doi. 10.1134/S1063782613080228
- By:
- Publication type:
- Article
3
Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1137, doi. 10.1134/S1063782613080150
- By:
- Publication type:
- Article
4
Prospects for the pulsed electrodeposition of zinc-oxide hierarchical nanostructures.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1123, doi. 10.1134/S1063782613080101
- By:
- Publication type:
- Article
5
Features of the stress-strain state of Si/SiO/Ge heterostructures with germanium nanoislands of a limited density.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1031, doi. 10.1134/S1063782613080113
- By:
- Publication type:
- Article
6
Electrical phenomena in a metal/nanooxide/ p-silicon structure during its transformation to a resonant-tunneling diode.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1084, doi. 10.1134/S1063782613080083
- By:
- Publication type:
- Article
7
X-ray and synchrotron studies of porous silicon.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1051, doi. 10.1134/S1063782613080174
- By:
- Publication type:
- Article
8
Study of the properties of solar cells based on a-Si:H p- i- n structures by admittance spectroscopy.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1090, doi. 10.1134/S106378261308006X
- By:
- Publication type:
- Article
9
Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1013, doi. 10.1134/S1063782613080022
- By:
- Publication type:
- Article
10
Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1041, doi. 10.1134/S1063782613080137
- By:
- Publication type:
- Article
11
Effect of annealing in argon on the properties of thermally deposited gallium-oxide films.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1130, doi. 10.1134/S1063782613080071
- By:
- Publication type:
- Article
12
Study of the effect of the acid-base surface properties of ZnO, FeO and ZnFeO oxides on their gas sensitivity to ethanol vapor.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1026, doi. 10.1134/S1063782613080095
- By:
- Publication type:
- Article
13
AlGaAs/GaAs diode lasers (1020-1100 nm) with an asymmetric broadened single transverse mode waveguide.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1079, doi. 10.1134/S1063782613080186
- By:
- Publication type:
- Article
14
Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1046, doi. 10.1134/S1063782613080198
- By:
- Publication type:
- Article
15
Copolymers of carbazole- and indolocarbazole-containing phenylquinolines as new materials for electroluminescent devices.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1058, doi. 10.1134/S1063782613080034
- By:
- Publication type:
- Article
16
Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1097, doi. 10.1134/S106378261308023X
- By:
- Publication type:
- Article
17
Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1116, doi. 10.1134/S1063782613080216
- By:
- Publication type:
- Article
18
High-speed photodiodes for the mid-infrared spectral region 1.2-2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2-5 GHz.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1103, doi. 10.1134/S1063782613080046
- By:
- Publication type:
- Article
19
Features of defect formation during the growth of double heterostructures for injection lasers based on AlGaAsSb/GaSb materials.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1110, doi. 10.1134/S1063782613080125
- By:
- Publication type:
- Article
20
(In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1037, doi. 10.1134/S1063782613080058
- By:
- Publication type:
- Article
21
Optical properties of oxygen-implanted CdS:O layers in terms of band anticrossing theory.
- Published in:
- Semiconductors, 2013, v. 47, n. 8, p. 1018, doi. 10.1134/S1063782613080149
- By:
- Publication type:
- Article