Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 6
Results: 28
Comparative characteristics of the Raman scattering spectra of graphene films on conductive and semi-insulating 6 H-SiC substrates.
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- Semiconductors, 2013, v. 47, n. 6, p. 812, doi. 10.1134/S1063782613060134
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Phase transformations during the Ag-In plating and bonding of vertical diode elements of multijunction solar cells.
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- Semiconductors, 2013, v. 47, n. 6, p. 856, doi. 10.1134/S1063782613060122
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On an exciton with a spatially separated electron and hole in quasi-zero-dimensional semiconductor nanosystems.
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- Semiconductors, 2013, v. 47, n. 6, p. 791, doi. 10.1134/S1063782613060225
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Effect of the stoichiometric composition of the Si(111) $\sqrt {21} $ × $\sqrt {21} $-(Au, Ag) surface phase on substrate conductivity.
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- Semiconductors, 2013, v. 47, n. 6, p. 775, doi. 10.1134/S1063782613060298
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On the photoinduced effect in undoped a-Si:H films.
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- Semiconductors, 2013, v. 47, n. 6, p. 767, doi. 10.1134/S1063782613060158
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Effect of fluorine, nitrogen, and carbon impurities on the electronic and magnetic properties of WO.
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- Semiconductors, 2013, v. 47, n. 6, p. 740, doi. 10.1134/S1063782613060249
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Open-circuit voltage of an illuminated nonideal heterojunction.
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- Semiconductors, 2013, v. 47, n. 6, p. 838, doi. 10.1134/S1063782613060067
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Optical phonons in CdGaSSe alloys.
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- Semiconductors, 2013, v. 47, n. 6, p. 761, doi. 10.1134/S1063782613060110
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On the resonant level of chromium in the rhombohedral and cubic phases of PbGeCrTe alloys.
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- Semiconductors, 2013, v. 47, n. 6, p. 729, doi. 10.1134/S1063782613060262
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MOS solar cells with oxides deposited by sol-gel spin-coating techniques.
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- Semiconductors, 2013, v. 47, n. 6, p. 835, doi. 10.1134/S1063782613060092
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Charge transport mechanisms in anisotype n-TiO/ p-Si heterostructures.
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- Semiconductors, 2013, v. 47, n. 6, p. 799, doi. 10.1134/S1063782613060171
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Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering.
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- Semiconductors, 2013, v. 47, n. 6, p. 787, doi. 10.1134/S1063782613060043
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Fundamental spectra of optical functions for indium bromide in the energy range of 2-30 eV at 4.2 K.
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- Semiconductors, 2013, v. 47, n. 6, p. 749, doi. 10.1134/S1063782613060274
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Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers.
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- Semiconductors, 2013, v. 47, n. 6, p. 844, doi. 10.1134/S1063782613060055
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Energy relaxation of nonequilibrium electrons in a nanotube formed by a rolled-up quantum well.
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- Semiconductors, 2013, v. 47, n. 6, p. 804, doi. 10.1134/S1063782613060237
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DLTS Study of plastically deformed copper-doped n-type germanium.
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- Semiconductors, 2013, v. 47, n. 6, p. 849, doi. 10.1134/S1063782613060250
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Temperature dependence of the threshold current in quantum-well WGM lasers (2.0-2.5 μm).
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- Semiconductors, 2013, v. 47, n. 6, p. 831, doi. 10.1134/S1063782613060109
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Effect of ion treatment on the properties of InO:Sn films.
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- Semiconductors, 2013, v. 47, n. 6, p. 870, doi. 10.1134/S1063782613060146
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Method for determination of the degree of compensation for electrically active impurities in multivalley semiconductors.
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- Semiconductors, 2013, v. 47, n. 6, p. 745, doi. 10.1134/S1063782613060031
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Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs.
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- Semiconductors, 2013, v. 47, n. 6, p. 820, doi. 10.1134/S1063782613060080
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Electrical properties of silicon schottky diodes containing metal films of various compositions.
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- Semiconductors, 2013, v. 47, n. 6, p. 771, doi. 10.1134/S1063782613060195
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Energy states of a Cr ion in ZnSe crystals.
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- Semiconductors, 2013, v. 47, n. 6, p. 736, doi. 10.1134/S1063782613060183
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Injection photodiode based on an n-CdS/ p-CdTe heterostructure.
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- Semiconductors, 2013, v. 47, n. 6, p. 825, doi. 10.1134/S106378261306016X
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Analysis of the growth dependences of silicon-on-sapphire heteroepitaxy.
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- Semiconductors, 2013, v. 47, n. 6, p. 865, doi. 10.1134/S1063782613060213
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Photovoltaic properties of GaAs:Be nanowire arrays.
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- Semiconductors, 2013, v. 47, n. 6, p. 808, doi. 10.1134/S1063782613060079
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Carbon Systems.
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- Semiconductors, 2013, v. 47, n. 6, p. 815, doi. 10.1134/S106378261306002X
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Role of intervalley scattering in the radiative recombination in PbEuTe alloys (0 ≤ x ≤ 1).
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- Semiconductors, 2013, v. 47, n. 6, p. 755, doi. 10.1134/S1063782613060201
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Study of the I- V characteristics of nanostructured Pd films on a Si substrate after vacuum annealing.
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- Semiconductors, 2013, v. 47, n. 6, p. 782, doi. 10.1134/S1063782613060286
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