Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 6

Results: 28

Phase transformations during the Ag-In plating and bonding of vertical diode elements of multijunction solar cells.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 856, doi. 10.1134/S1063782613060122

By:

Klochko, N.;
Khrypunov, G.;
Volkova, N.;
Kopach, V.;
Lyubov, V.;
Kirichenko, M.;
Momotenko, A.;
Kharchenko, N.;
Nikitin, V.

Publication type:

Article

Effect of fluorine, nitrogen, and carbon impurities on the electronic and magnetic properties of WO.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 740, doi. 10.1134/S1063782613060249

By:

Shein, I.;
Ivanovskii, A.

Publication type:

Article

Optical phonons in CdGaSSe alloys.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 761, doi. 10.1134/S1063782613060110

By:

Kerimova, T.;
Abdullaev, N.;
Mamedova, I.;
Badalova, Z.;
Guliev, R.;
Paucar, R.;
Wakita, K.;
Mamedov, N.

Publication type:

Article

Energy relaxation of nonequilibrium electrons in a nanotube formed by a rolled-up quantum well.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 804, doi. 10.1134/S1063782613060237

By:

Seyid-Rzayeva, S.

Publication type:

Article

Open-circuit voltage of an illuminated nonideal heterojunction.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 838, doi. 10.1134/S1063782613060067

By:

Borschak, V.;
Smyntyna, V.;
Brytavskyi, Ie.;
Karpenko, A.;
Zatovskaya, N.

Publication type:

Article

Comparative characteristics of the Raman scattering spectra of graphene films on conductive and semi-insulating 6 H-SiC substrates.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 812, doi. 10.1134/S1063782613060134

By:

Konakova, R.;
Kolomys, O.;
Okhrimenko, O.;
Strelchuk, V.;
Volkov, E.;
Grigoriev, M.;
Svetlichnyi, A.;
Spiridonov, O.

Publication type:

Article

Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 787, doi. 10.1134/S1063782613060043

By:

Bidmeshkipour, Samina;
Shahtahmasebi, Nasser

Publication type:

Article

On an exciton with a spatially separated electron and hole in quasi-zero-dimensional semiconductor nanosystems.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 791, doi. 10.1134/S1063782613060225

By:

Pokutnyi, S.

Publication type:

Article

Effect of the stoichiometric composition of the Si(111) $\sqrt {21} $ × $\sqrt {21} $-(Au, Ag) surface phase on substrate conductivity.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 775, doi. 10.1134/S1063782613060298

By:

Tsukanov, D.;
Ryzhkova, M.;
Borisenko, E.

Publication type:

Article

On the photoinduced effect in undoped a-Si:H films.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 767, doi. 10.1134/S1063782613060158

By:

Kurova, I.;
Ormont, N.

Publication type:

Article

On the resonant level of chromium in the rhombohedral and cubic phases of PbGeCrTe alloys.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 729, doi. 10.1134/S1063782613060262

By:

Skipetrov, E.;
Pichugin, N.;
Slyn'ko, E.;
Slyn'ko, V.

Publication type:

Article

DLTS Study of plastically deformed copper-doped n-type germanium.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 849, doi. 10.1134/S1063782613060250

By:

Shevchenko, S.;
Kolyubakin, A.

Publication type:

Article

Carbon Systems.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 815, doi. 10.1134/S106378261306002X

By:

Alisultanov, Z.

Publication type:

Article

Role of intervalley scattering in the radiative recombination in PbEuTe alloys (0 ≤ x ≤ 1).

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 755, doi. 10.1134/S1063782613060201

By:

Pashkeev, D.;
Zasavitskiy, I.

Publication type:

Article

MOS solar cells with oxides deposited by sol-gel spin-coating techniques.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 835, doi. 10.1134/S1063782613060092

By:

Huang, Chia-Hong;
Chang, Chung-Cheng;
Tsai, Jung-Hui

Publication type:

Article

Charge transport mechanisms in anisotype n-TiO/ p-Si heterostructures.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 799, doi. 10.1134/S1063782613060171

By:

Mostovyi, A.;
Brus, V.;
Maryanchuk, P.

Publication type:

Article

Temperature dependence of the threshold current in quantum-well WGM lasers (2.0-2.5 μm).

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 831, doi. 10.1134/S1063782613060109

By:

Imenkov, A.;
Sherstnev, V.;
Kovalev, I.;
Il'inskaya, N.;
Serebrennikova, O.;
Teissier, R.;
Baranov, A.;
Yakovlev, Yu.

Publication type:

Article

Fundamental spectra of optical functions for indium bromide in the energy range of 2-30 eV at 4.2 K.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 749, doi. 10.1134/S1063782613060274

By:

Sobolev, V.;
Anisimov, D.

Publication type:

Article

Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 844, doi. 10.1134/S1063782613060055

By:

Blokhin, S.;
Bobrov, M.;
Maleev, N.;
Kuzmenkov, A.;
Stetsenko, V.;
Pavlov, M.;
Karachinsky, L.;
Novikov, I.;
Zadiranov, Yu.;
Egorov, A.;
Ustinov, V.

Publication type:

Article

Analysis of the growth dependences of silicon-on-sapphire heteroepitaxy.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 865, doi. 10.1134/S1063782613060213

By:

Pavlov, D.;
Shilyaev, P.;
Pirogov, A.;
Krivulin, N.;
Bobrov, A.;
Pegasina, M.

Publication type:

Article

Photovoltaic properties of GaAs:Be nanowire arrays.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 808, doi. 10.1134/S1063782613060079

By:

Bouravleuv, A.;
Beznasyuk, D.;
Gilstein, E.;
Tchernycheva, M.;
Luna Bugallo, A.;
Rigutti, L.;
Yu, L.;
Proskuryakov, Yu.;
Shtrom, I.;
Timofeeva, M.;
Samsonenko, Yu.;
Khrebtov, A.;
Cirlin, G.

Publication type:

Article

Effect of ion treatment on the properties of InO:Sn films.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 870, doi. 10.1134/S1063782613060146

By:

Krylov, P.;
Zakirova, R.;
Fedotova, I.;
Gilmutdinov, F.

Publication type:

Article

Method for determination of the degree of compensation for electrically active impurities in multivalley semiconductors.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 745, doi. 10.1134/S1063782613060031

By:

Baranskii, P.;
Gaidar, G.

Publication type:

Article

Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 820, doi. 10.1134/S1063782613060080

By:

Çörekçi, S.;
Öztürk, M.;
Yu, Hongbo;
Çakmak, M.;
Özçelik, S.;
Özbay, E.

Publication type:

Article

Electrical properties of silicon schottky diodes containing metal films of various compositions.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 771, doi. 10.1134/S1063782613060195

By:

Pashaev, I.

Publication type:

Article

Energy states of a Cr ion in ZnSe crystals.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 736, doi. 10.1134/S1063782613060183

By:

Nitsuk, Yu.

Publication type:

Article

Injection photodiode based on an n-CdS/ p-CdTe heterostructure.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 825, doi. 10.1134/S106378261306016X

By:

Mirsagatov, Sh.;
Kabulov, R.;
Makhmudov, M.

Publication type:

Article

Study of the I- V characteristics of nanostructured Pd films on a Si substrate after vacuum annealing.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 782, doi. 10.1134/S1063782613060286

By:

Tomilin, S.;
Yanovsky, A.;
Tomilina, O.;
Mikaelyan, G.

Publication type:

Article