Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 5
Results: 24
Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 606, doi. 10.1134/S1063782613050229
- By:
- Publication type:
- Article
Magnetic properties of (FeInS)(InS) alloy single crystals.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 596, doi. 10.1134/S1063782613050096
- By:
- Publication type:
- Article
Conductivity of nanocrystalline ZnO(Ga).
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 650, doi. 10.1134/S1063782613050242
- By:
- Publication type:
- Article
Domain-size evolution upon switching of the states of a one-dimensional system with defects.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 628, doi. 10.1134/S1063782613050187
- By:
- Publication type:
- Article
Chemical passivation of InSb (100) substrates in aqueous solutions of sodium sulfide.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 721, doi. 10.1134/S106378261305014X
- By:
- Publication type:
- Article
Electrophysical properties of mesoporous silicon passivated by iron.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 657, doi. 10.1134/S1063782613050084
- By:
- Publication type:
- Article
Study of the light-induced degradation of tandem α-Si:H/μ c-Si:H photovoltaic converters.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 679, doi. 10.1134/S1063782613050102
- By:
- Publication type:
- Article
Generation of powerful microwave voltage oscillations in a diffused silicon diode.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 670, doi. 10.1134/S1063782613050151
- By:
- Publication type:
- Article
Tunneling current of the contact between impurity-containing graphene nanoribbons.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 662, doi. 10.1134/S1063782613050060
- By:
- Publication type:
- Article
Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 701, doi. 10.1134/S1063782613050114
- By:
- Publication type:
- Article
Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 636, doi. 10.1134/S1063782613050047
- By:
- Publication type:
- Article
Effect of surface scattering of carriers in the photoconductivity spectra of CdS.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 619, doi. 10.1134/S1063782613050059
- By:
- Publication type:
- Article
A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 686, doi. 10.1134/S1063782613050230
- By:
- Publication type:
- Article
Photoluminescence properties of cadmium-selenide quantum dots embedded in a liquid-crystal polymer matrix.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 647, doi. 10.1134/S1063782613050217
- By:
- Publication type:
- Article
Effect of a weak magnetic field on the micromechanical and electrical properties of silicon for use in solar power engineering.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 665, doi. 10.1134/S1063782613050163
- By:
- Publication type:
- Article
Features of ZnS-powder doping with a Mn impurity during synthesis and subsequent annealing.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 713, doi. 10.1134/S1063782613050138
- By:
- Publication type:
- Article
Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 641, doi. 10.1134/S1063782613050072
- By:
- Publication type:
- Article
Ionic conductivity and dielectric relaxation in γ-irradiated TlGaTe crystals.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 707, doi. 10.1134/S1063782613050199
- By:
- Publication type:
- Article
Gallium-oxide films obtained by thermal evaporation.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 612, doi. 10.1134/S1063782613050126
- By:
- Publication type:
- Article
Dark-current relaxation in MnGaSe single crystals.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 593, doi. 10.1134/S1063782613050205
- By:
- Publication type:
- Article
High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 695, doi. 10.1134/S1063782613050175
- By:
- Publication type:
- Article
Model of the formation of a polycrystalline n-ZnO/ p-CuO heterojunction.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 655, doi. 10.1134/S1063782613050035
- By:
- Publication type:
- Article
The mechanism of charge transfer in Bi(TeSe) solid solution thin films.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 602, doi. 10.1134/S1063782613050023
- By:
- Publication type:
- Article
Resonant inelastic light scattering and photoluminescence in isolated nc-Si/SiO quantum dots.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 623, doi. 10.1134/S106378261302005X
- By:
- Publication type:
- Article