The mechanism of contact-resistance formation on lapped n-Si surfaces.
- Published in:
- Semiconductors, 2013, v. 47, n. 3, p. 449, doi. 10.1134/S1063782613030238
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 3
Results: 26
1
2
Study of the composition, structure, and optical properties of a-SiC:H〈Er〉 films erbium doped from the Er(pd) complex compound.
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- Semiconductors, 2013, v. 47, n. 3, p. 376, doi. 10.1134/S1063782613030147
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- Article
3
Influence of irradiation with swift heavy ions on multilayer Si/SiO heterostructures.
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- Semiconductors, 2013, v. 47, n. 3, p. 358, doi. 10.1134/S1063782613030111
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- Article
4
Photoconductivity of vanadium-doped lead telluride in the terahertz spectral region.
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- Semiconductors, 2013, v. 47, n. 3, p. 319, doi. 10.1134/S1063782613030032
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- Article
5
Specific features of self-compensation in ErSnSe solid solutions.
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- Semiconductors, 2013, v. 47, n. 3, p. 323, doi. 10.1134/S106378261303010X
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- Article
6
Influence of doping with third group oxides on properties of zinc oxide thin films.
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- Semiconductors, 2013, v. 47, n. 3, p. 422, doi. 10.1134/S1063782613030184
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- Article
7
Optical size effect in InO nanostructured films.
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- Semiconductors, 2013, v. 47, n. 3, p. 345, doi. 10.1134/S1063782613030135
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- Article
8
Features of the performance of a transient voltage suppressor in the pulsed mode.
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- Semiconductors, 2013, v. 47, n. 3, p. 387, doi. 10.1134/S1063782613030202
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- Article
9
Photoconductivity of composite structures based on porous SnO sensitized with CdSe nanocrystals.
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- Semiconductors, 2013, v. 47, n. 3, p. 383, doi. 10.1134/S106378261303007X
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- Article
10
Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices.
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- Semiconductors, 2013, v. 47, n. 3, p. 349, doi. 10.1134/S1063782613030196
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- Article
11
Surface functional composition and sensor properties of ZnO, FeO, and ZnFeO.
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- Semiconductors, 2013, v. 47, n. 3, p. 392, doi. 10.1134/S1063782613030123
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- Article
12
Dependence of the efficiency of Raman scattering in silicon nanowire arrays on the excitation wavelength.
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- Semiconductors, 2013, v. 47, n. 3, p. 354, doi. 10.1134/S1063782613030068
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- Article
13
Thermally deposited Ag-doped CdS thin film transistors with high-k rare-earth oxide NdO as gate dielectric.
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- Semiconductors, 2013, v. 47, n. 3, p. 341, doi. 10.1134/S1063782613030081
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- Article
14
Study of the recombination process at crystallite boundaries in CuInGaSe (CIGS) films by microwave photoconductivity.
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- Semiconductors, 2013, v. 47, n. 3, p. 335, doi. 10.1134/S1063782613030056
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- Article
15
Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount.
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- Semiconductors, 2013, v. 47, n. 3, p. 409, doi. 10.1134/S1063782613030160
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- Article
16
Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms.
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- Semiconductors, 2013, v. 47, n. 3, p. 433, doi. 10.1134/S1063782613030251
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- Article
17
Theory and simulation of combined mechanisms limiting the safe operating area of power semiconductor microelectronic switches.
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- Semiconductors, 2013, v. 47, n. 3, p. 396, doi. 10.1134/S1063782613030093
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- Article
18
Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers.
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- Semiconductors, 2013, v. 47, n. 3, p. 427, doi. 10.1134/S106378261303024X
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- Article
19
Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts.
- Published in:
- Semiconductors, 2013, v. 47, n. 3, p. 372, doi. 10.1134/S1063782613030263
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- Article
20
Electrical properties of PbMnTe single crystals with an excess of tellurium.
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- Semiconductors, 2013, v. 47, n. 3, p. 315, doi. 10.1134/S1063782613030044
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- Article
21
Violation of neutrality and occurrence of S-shaped current-voltage characteristic for doped semiconductors under double injection.
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- Semiconductors, 2013, v. 47, n. 3, p. 327, doi. 10.1134/S1063782613030172
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- Article
22
Revealing the surface interface correlations in a-Si:H films by 2D detrended fluctuation analysis.
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- Semiconductors, 2013, v. 47, n. 3, p. 365, doi. 10.1134/S1063782613030020
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- Publication type:
- Article
23
Picosecond internal Q-switching mode correlates with laser diode breakdown voltage.
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- Semiconductors, 2013, v. 47, n. 3, p. 406, doi. 10.1134/S1063782613030159
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- Article
24
Optimization of the deposition and annealing conditions of fluorine-doped indium oxide films for silicon solar cells.
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- Semiconductors, 2013, v. 47, n. 3, p. 415, doi. 10.1134/S1063782613030275
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- Publication type:
- Article
25
Specific features of nanosize object formation in an InSb/InAs system by metal-organic vapor-phase epitaxy.
- Published in:
- Semiconductors, 2013, v. 47, n. 3, p. 443, doi. 10.1134/S1063782613030214
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- Article
26
Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN.
- Published in:
- Semiconductors, 2013, v. 47, n. 3, p. 437, doi. 10.1134/S1063782613030226
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- Article