Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 2

Results: 22

Determination of the thickness and spectral dependence of the refractive index of AlInSb epitaxial layers from reflectance spectra.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 292, doi. 10.1134/S1063782613020140
By:
- Komkov, O.;
- Firsov, D.;
- Semenov, A.;
- Meltser, B.;
- Troshkov, S.;
- Pikhtin, A.;
- Ivanov, S.
Publication type:
Article
Monoisotopic silicon Si in spin resonance spectroscopy of electrons localized at donors.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 203, doi. 10.1134/S1063782613020073
By:
- Ezhevskii, A.;
- Popkov, S.;
- Soukhorukov, A.;
- Guseinov, D.;
- Gavva, V.;
- Gusev, A.;
- Abrosimov, N.;
- Riemann, H.
Publication type:
Article
Damage formation in Si under irradiation with PF ions of different energies.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 242, doi. 10.1134/S1063782613020115
By:
- Karabeshkin, K.;
- Karaseov, P.;
- Titov, A.
Publication type:
Article
Shallow-donor lasers in uniaxially stressed silicon.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 235, doi. 10.1134/S1063782613020152
By:
- Kovalevsky, K.;
- Zhukavin, R.;
- Tsyplenkov, V.;
- Shastin, V.;
- Abrosimov, N.;
- Riemann, H.;
- Pavlov, S.;
- Hübers, H.
Publication type:
Article
High-efficiency GaSb photocells.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 307, doi. 10.1134/S1063782613020139
By:
- Khvostikov, V.;
- Sorokina, S.;
- Khvostikova, O.;
- Timoshina, N.;
- Potapovich, N.;
- Ber, B.;
- Kazantsev, D.;
- Andreev, V.
Publication type:
Article
Aligned arrays of zinc oxide nanorods on silicon substrates.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 252, doi. 10.1134/S1063782613020176
By:
- Redkin, A.;
- Ryzhova, M.;
- Yakimov, E.;
- Gruzintsev, A.
Publication type:
Article
Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 298, doi. 10.1134/S1063782613020036
By:
- Alexandrov, P.;
- Demakov, K.;
- Shemardov, S.;
- Kuznetsov, Yu.
Publication type:
Article
Electron levels and luminescence of dislocation networks formed by the hydrophilic bonding of silicon wafers.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 259, doi. 10.1134/S1063782613020061
By:
- Bondarenko, A.;
- Vyvenko, O.;
- Isakov, I.
Publication type:
Article
Optical properties of silicon with a high content of boron.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 269, doi. 10.1134/S1063782613020127
By:
- Khirunenko, L.;
- Pomozov, Yu.;
- Sosnin, M.
Publication type:
Article
Annealing kinetics of boron-containing centers in electron-irradiated silicon.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 228, doi. 10.1134/S1063782613020085
By:
- Feklisova, O.;
- Yarykin, N.;
- Weber, J.
Publication type:
Article
Photoresponse recovery in silicon photodiodes upon VUV irradiation.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 213, doi. 10.1134/S1063782613020243
By:
- Zabrodskiy, V.;
- Aruev, P.;
- Belik, V.;
- Ber, B.;
- Kazantsev, D.;
- Drozdova, M.;
- Zabrodskaya, N.;
- Lazeeva, M.;
- Nikolenko, A.;
- Sukhanov, V.;
- Filimonov, V.;
- Sherstnev, E.
Publication type:
Article
The electrically active centers in oxygen-implanted silicon.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 285, doi. 10.1134/S1063782613020164
By:
- Loshachenko, A.;
- Vyvenko, O.;
- Shek, E.;
- Sobolev, N.
Publication type:
Article
Structure and transport properties of nanocarbon films prepared by sublimation on a 6 H-SiC surface.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 301, doi. 10.1134/S1063782613020024
By:
- Agrinskaya, N.;
- Berezovets, V.;
- Kozub, V.;
- Kotousova, I.;
- Lebedev, A.;
- Lebedev, S.;
- Sitnikova, A.
Publication type:
Article
Light emission from silicon nanocrystals.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 183, doi. 10.1134/S1063782613020103
By:
- Gusev, O.;
- Poddubny, A.;
- Prokofiev, A.;
- Yassievich, I.
Publication type:
Article
Radiation effects in Si-Ge quantum size structure (Review).
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 217, doi. 10.1134/S1063782613020188
By:
- Sobolev, N.
Publication type:
Article
Influence of metal impurities on recombination activity of dislocations in multicrystalline silicon.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 232, doi. 10.1134/S1063782613020097
By:
- Feklisova, O.;
- Yu, X.;
- Yang, D.;
- Yakimov, E.
Publication type:
Article
Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 247, doi. 10.1134/S1063782613020048
By:
- Astrov, Yu.;
- Lynch, S.;
- Shuman, V.;
- Portsel, L.;
- Makhova, A.;
- Lodygin, A.
Publication type:
Article
Electrically active centers formed in silicon during the high-temperature diffusion of boron and aluminum.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 289, doi. 10.1134/S106378261302019X
By:
- Sobolev, N.;
- Loshachenko, A.;
- Poloskin, D.;
- Shek, E.
Publication type:
Article
Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 264, doi. 10.1134/S106378261302022X
By:
- Vdovin, V.;
- Ubyivovk, E.;
- Vyvenko, O.
Publication type:
Article
Identification of copper-copper and copper-hydrogen complexes in silicon.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 275, doi. 10.1134/S1063782613020231
By:
- Yarykin, N.;
- Weber, J.
Publication type:
Article
Tunnel field-effect transistors with graphene channels.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 279, doi. 10.1134/S1063782613020218
By:
- Svintsov, D.;
- Vyurkov, V.;
- Lukichev, V.;
- Orlikovsky, A.;
- Burenkov, A.;
- Oechsner, R.
Publication type:
Article
Utilization of silicon detectors with 'ideal-diode' current-voltage characteristics.
Published in:
Semiconductors, 2013, v. 47, n. 2, p. 209, doi. 10.1134/S1063782613020206
By:
- Sukhanov, V.;
- Aruev, P.;
- Drozdova, M.;
- Zabrodskaya, N.;
- Zabrodskiy, V.;
- Lazeeva, M.;
- Filimonov, V.;
- Sherstnev, E.
Publication type:
Article