Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 2

Results: 22

Shallow-donor lasers in uniaxially stressed silicon.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 235, doi. 10.1134/S1063782613020152

By:

Kovalevsky, K.;
Zhukavin, R.;
Tsyplenkov, V.;
Shastin, V.;
Abrosimov, N.;
Riemann, H.;
Pavlov, S.;
Hübers, H.

Publication type:

Article

Determination of the thickness and spectral dependence of the refractive index of AlInSb epitaxial layers from reflectance spectra.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 292, doi. 10.1134/S1063782613020140

By:

Komkov, O.;
Firsov, D.;
Semenov, A.;
Meltser, B.;
Troshkov, S.;
Pikhtin, A.;
Ivanov, S.

Publication type:

Article

High-efficiency GaSb photocells.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 307, doi. 10.1134/S1063782613020139

By:

Khvostikov, V.;
Sorokina, S.;
Khvostikova, O.;
Timoshina, N.;
Potapovich, N.;
Ber, B.;
Kazantsev, D.;
Andreev, V.

Publication type:

Article

Aligned arrays of zinc oxide nanorods on silicon substrates.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 252, doi. 10.1134/S1063782613020176

By:

Redkin, A.;
Ryzhova, M.;
Yakimov, E.;
Gruzintsev, A.

Publication type:

Article

Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 298, doi. 10.1134/S1063782613020036

By:

Alexandrov, P.;
Demakov, K.;
Shemardov, S.;
Kuznetsov, Yu.

Publication type:

Article

Monoisotopic silicon Si in spin resonance spectroscopy of electrons localized at donors.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 203, doi. 10.1134/S1063782613020073

By:

Ezhevskii, A.;
Popkov, S.;
Soukhorukov, A.;
Guseinov, D.;
Gavva, V.;
Gusev, A.;
Abrosimov, N.;
Riemann, H.

Publication type:

Article

Damage formation in Si under irradiation with PF ions of different energies.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 242, doi. 10.1134/S1063782613020115

By:

Karabeshkin, K.;
Karaseov, P.;
Titov, A.

Publication type:

Article

Electron levels and luminescence of dislocation networks formed by the hydrophilic bonding of silicon wafers.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 259, doi. 10.1134/S1063782613020061

By:

Bondarenko, A.;
Vyvenko, O.;
Isakov, I.

Publication type:

Article

Optical properties of silicon with a high content of boron.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 269, doi. 10.1134/S1063782613020127

By:

Khirunenko, L.;
Pomozov, Yu.;
Sosnin, M.

Publication type:

Article

Annealing kinetics of boron-containing centers in electron-irradiated silicon.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 228, doi. 10.1134/S1063782613020085

By:

Feklisova, O.;
Yarykin, N.;
Weber, J.

Publication type:

Article

Photoresponse recovery in silicon photodiodes upon VUV irradiation.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 213, doi. 10.1134/S1063782613020243

By:

Zabrodskiy, V.;
Aruev, P.;
Belik, V.;
Ber, B.;
Kazantsev, D.;
Drozdova, M.;
Zabrodskaya, N.;
Lazeeva, M.;
Nikolenko, A.;
Sukhanov, V.;
Filimonov, V.;
Sherstnev, E.

Publication type:

Article

The electrically active centers in oxygen-implanted silicon.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 285, doi. 10.1134/S1063782613020164

By:

Loshachenko, A.;
Vyvenko, O.;
Shek, E.;
Sobolev, N.

Publication type:

Article

Structure and transport properties of nanocarbon films prepared by sublimation on a 6 H-SiC surface.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 301, doi. 10.1134/S1063782613020024

By:

Agrinskaya, N.;
Berezovets, V.;
Kozub, V.;
Kotousova, I.;
Lebedev, A.;
Lebedev, S.;
Sitnikova, A.

Publication type:

Article

Light emission from silicon nanocrystals.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 183, doi. 10.1134/S1063782613020103

By:

Gusev, O.;
Poddubny, A.;
Prokofiev, A.;
Yassievich, I.

Publication type:

Article

Radiation effects in Si-Ge quantum size structure (Review).

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 217, doi. 10.1134/S1063782613020188

By:

Sobolev, N.

Publication type:

Article

Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 247, doi. 10.1134/S1063782613020048

By:

Astrov, Yu.;
Lynch, S.;
Shuman, V.;
Portsel, L.;
Makhova, A.;
Lodygin, A.

Publication type:

Article

Utilization of silicon detectors with 'ideal-diode' current-voltage characteristics.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 209, doi. 10.1134/S1063782613020206

By:

Sukhanov, V.;
Aruev, P.;
Drozdova, M.;
Zabrodskaya, N.;
Zabrodskiy, V.;
Lazeeva, M.;
Filimonov, V.;
Sherstnev, E.

Publication type:

Article

Electrically active centers formed in silicon during the high-temperature diffusion of boron and aluminum.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 289, doi. 10.1134/S106378261302019X

By:

Sobolev, N.;
Loshachenko, A.;
Poloskin, D.;
Shek, E.

Publication type:

Article

Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 264, doi. 10.1134/S106378261302022X

By:

Vdovin, V.;
Ubyivovk, E.;
Vyvenko, O.

Publication type:

Article

Identification of copper-copper and copper-hydrogen complexes in silicon.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 275, doi. 10.1134/S1063782613020231

By:

Yarykin, N.;
Weber, J.

Publication type:

Article

Tunnel field-effect transistors with graphene channels.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 279, doi. 10.1134/S1063782613020218

By:

Svintsov, D.;
Vyurkov, V.;
Lukichev, V.;
Orlikovsky, A.;
Burenkov, A.;
Oechsner, R.

Publication type:

Article

Influence of metal impurities on recombination activity of dislocations in multicrystalline silicon.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 232, doi. 10.1134/S1063782613020097

By:

Feklisova, O.;
Yu, X.;
Yang, D.;
Yakimov, E.

Publication type:

Article