Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 1

Results: 31

On the specific features of the density of states of epitaxial graphene formed on metal and semiconductor substrates.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 95, doi. 10.1134/S1063782613010090

By:

Davydov, S.

Publication type:

Article

Study of the structure of a-AsSe〈Bi〉 amorphous layers by dielectric spectroscopy.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 90, doi. 10.1134/S1063782613010041

By:

Anisimova, N.;
Bordovsky, V.;
Grabko, G.;
Kastro, R.

Publication type:

Article

On the theory of the photoelectric effect in surface-graded-gap semiconductors.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 66, doi. 10.1134/S1063782613010156

By:

Kholodnov, V.

Publication type:

Article

Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 73, doi. 10.1134/S1063782613010144

By:

Kalinina, K.;
Mikhailova, M.;
Zhurtanov, B.;
Stoyanov, N.;
Yakovlev, Yu.

Publication type:

Article

Analysis of the temperature dependence of the capacitance-voltage characteristics of InGaN/GaN multiple quantum well light-emitting structures.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 162, doi. 10.1134/S1063782612120147

By:

Soltanovich, O.;
Yakimov, E.

Publication type:

Article

Optical resonance identification of long-range electron tunneling between superlattice levels in an electric field.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 63, doi. 10.1134/S106378261301003X

By:

Andronov, A.;
Dodin, E.;
Zinchenko, D.;
Nozdrin, Yu.

Publication type:

Article

Specific features of the steady-state carrier distribution and holding current in an optically triggered SiC thyristor.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 116, doi. 10.1134/S1063782613010223

By:

Yuferev, V.;
Levinshtein, M.;
Palmour, J.

Publication type:

Article

Two-color luminescence from a single type-II InAsSbP/InAs heterostructure.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 28, doi. 10.1134/S1063782613010120

By:

Grigoryev, M.;
Alekseev, P.;
Ivanov, E.;
Moiseev, K.

Publication type:

Article

Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 127, doi. 10.1134/S1063782613010089

By:

Bochkareva, N.;
Voronenkov, V.;
Gorbunov, R.;
Latyshev, P.;
Lelikov, Yu.;
Rebane, Yu.;
Tsyuk, A.;
Shreter, Yu.

Publication type:

Article

Acoustoelectron interaction in quantum laser heterostructures.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 135, doi. 10.1134/S1063782613010168

By:

Kulakova, L.;
Averkiev, N.;
Lyutetskiy, A.;
Gorelov, V.

Publication type:

Article

On the lifetime of charge carriers in quantum dots at low temperatures.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 22, doi. 10.1134/S1063782613010193

By:

Samosvat, D.;
Evtikhiev, V.;
Shkol'nik, A.;
Zegrya, G.

Publication type:

Article

Semiconductor lasers with internal wavelength selection.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 122, doi. 10.1134/S1063782613010247

By:

Zolotarev, V.;
Leshko, A.;
Lyutetskii, A.;
Nikolaev, D.;
Pikhtin, N.;
Podoskin, A.;
Slipchenko, S.;
Sokolova, Z.;
Shamakhov, V.;
Arsent'ev, I.;
Vavilova, L.;
Bakhvalov, K.;
Tarasov, I.

Publication type:

Article

Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 33, doi. 10.1134/S1063782613010181

By:

Protasov, D.;
Malin, T.;
Tikhonov, A.;
Tsatsulnikov, A.;
Zhuravlev, K.

Publication type:

Article

Photoelectric diagnostics method for InGaN/GaN multiple-quantum-well heterostructures.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 58, doi. 10.1134/S1063782613010053

By:

Baranovskiy, M.;
Glinskii, G.;
Mironova, M.

Publication type:

Article

Superstructured ordering in AlGaAs and GaInP alloys.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 1, doi. 10.1134/S106378261301020X

By:

Seredin, P.;
Domashevskaya, P.;
Arsentyev, I.;
Vinokurov, D.;
Stankevich, A.;
Prutskij, T.

Publication type:

Article

Photoluminescence dynamics in InGaAsSb/AlGaAsSb quantum well nanostructures.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 146, doi. 10.1134/S1063782612120202

By:

Vinnichenko, M.;
Firsov, D.;
Vorobjev, L.;
Mashko, M.;
Shterengas, L.;
Belenky, G.

Publication type:

Article

Properties of epitaxial (AlGaAs)C alloys grown by MOCVD autoepitaxy.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 7, doi. 10.1134/S1063782613010211

By:

Seredin, P.;
Domashevskaya, E.;
Arsentyev, I.;
Vinokurov, D.;
Stankevich, A.

Publication type:

Article

Long-term photoconductivity decay in n-InGaAs/GaAs heterostructures with coupled quantum wells under band-to-band excitation.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 174, doi. 10.1134/S1063782612120196

By:

Vainberg, V.;
Vasetskii, V.;
Gudenko, Yu.;
Poroshin, V.;
Baidus, N.;
Zvonkov, B.

Publication type:

Article

Optical anisotropy of InGaAs quantum dots.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 85, doi. 10.1134/S1063782613010077

By:

Blokhin, S.;
Nadtochiy, A.;
Krasivichev, A.;
Karachinsky, L.;
Vasil'ev, A.;
Nevedomskiy, V.;
Maximov, M.;
Cirlin, G.;
Buravlev, A.;
Maleev, N.;
Zhukov, A.;
Ledentsov, N.;
Ustinov, V.

Publication type:

Article

Optical spectroscopy of thin C:CdS composite films.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 105, doi. 10.1134/S1063782613010235

By:

Zakharova, I.;
Ziminov, V.;
Nashchekin, A.;
Vainshtein, Yu.;
Aleshin, A.

Publication type:

Article

Lateral growth and shape of semiconductor nanowires.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 50, doi. 10.1134/S1063782613010107

By:

Dubrovskii, V.;
Timofeeva, M.;
Tchernycheva, M.;
Bolshakov, A.

Publication type:

Article

Edge electroluminescence in small-area silicon p- n diodes heavily doped with boron: Analysis of model representations.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 110, doi. 10.1134/S1063782613010119

By:

Emel'yanov, A.

Publication type:

Article

Effect of rapid thermal annealing on the current-voltage characteristics of 4 H-SiC Schottky diodes.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 81, doi. 10.1134/S1063782613010132

By:

Ivanov, P.;
Il'inskaya, N.;
Potapov, A.;
Samsonova, T.;
Afanas'ev, A.;
Il'in, V.

Publication type:

Article

Luminescence in ZnMnTe/ZnMgTe and CdMnTe/CdMgTe structures with different parameters of quantum wells.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 45, doi. 10.1134/S1063782613010028

By:

Agekyan, V.;
Serov, A.;
Filosofov, N.;
Karczewski, G.

Publication type:

Article

Modeling of high-power HEMT irradiated with high-energy photons.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 152, doi. 10.1134/S1063782612120159

By:

Tarasova, E.;
Demidova, D.;
Obolensky, S.;
Fefelov, A.;
Ducov, D.

Publication type:

Article

MOCVD-grown heterostructures with GaAs/AlGaAs Superlattices: Growth features and optical and transport characteristics.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 158, doi. 10.1134/S1063782612120032

By:

Baidus, N.;
Biryukov, A.;
Dodin, E.;
Drozdov, Yu.;
Drozdov, M.;
Nozdrin, Yu.;
Andronov, A.

Publication type:

Article

Influence of the nature of a condensate material on the formation of an ensemble of islands during cryochemical synthesis from the vapor phase.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 13, doi. 10.1134/S1063782613010065

By:

Belyaev, A.;
Rubets, V.;
Antipov, V.

Publication type:

Article

Photoluminescence in dense arrays of silicon nanocrystals: the role of the concentration and average size.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 178, doi. 10.1134/S1063782612120044

By:

Belyakov, V.;
Sydorenko, K.;
Konakov, A.;
Kurova, N.;
Burdov, V.

Publication type:

Article

Features of the time evolution of localized quantum states in graphene.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 141, doi. 10.1134/S1063782612120111

By:

Majid, M.;
Savinskii, S.

Publication type:

Article

Temperature renormalization of the conduction electron g factor in silicon.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 169, doi. 10.1134/S1063782612120093

By:

Konakov, A.;
Burdov, V.;
Ezhevskii, A.;
Soukhorukov, A.;
Guseinov, D.;
Popkov, S.

Publication type:

Article

Features of the energy spectrum and hole-scattering mechanisms in PbSbTe.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 16, doi. 10.1134/S106378261301017X

By:

Nemov, S.;
Blagikh, N.;
Shelimova, L.

Publication type:

Article