Works matching IS 10637826 AND DT 2013 AND VI 47 AND IP 1
Results: 31
Optical resonance identification of long-range electron tunneling between superlattice levels in an electric field.
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- Semiconductors, 2013, v. 47, n. 1, p. 63, doi. 10.1134/S106378261301003X
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Specific features of the steady-state carrier distribution and holding current in an optically triggered SiC thyristor.
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- Semiconductors, 2013, v. 47, n. 1, p. 116, doi. 10.1134/S1063782613010223
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Two-color luminescence from a single type-II InAsSbP/InAs heterostructure.
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- Semiconductors, 2013, v. 47, n. 1, p. 28, doi. 10.1134/S1063782613010120
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On the specific features of the density of states of epitaxial graphene formed on metal and semiconductor substrates.
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- Semiconductors, 2013, v. 47, n. 1, p. 95, doi. 10.1134/S1063782613010090
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Acoustoelectron interaction in quantum laser heterostructures.
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- Semiconductors, 2013, v. 47, n. 1, p. 135, doi. 10.1134/S1063782613010168
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On the lifetime of charge carriers in quantum dots at low temperatures.
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- Semiconductors, 2013, v. 47, n. 1, p. 22, doi. 10.1134/S1063782613010193
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Study of the structure of a-AsSe〈Bi〉 amorphous layers by dielectric spectroscopy.
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- Semiconductors, 2013, v. 47, n. 1, p. 90, doi. 10.1134/S1063782613010041
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On the theory of the photoelectric effect in surface-graded-gap semiconductors.
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- Semiconductors, 2013, v. 47, n. 1, p. 66, doi. 10.1134/S1063782613010156
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Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes.
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- Semiconductors, 2013, v. 47, n. 1, p. 127, doi. 10.1134/S1063782613010089
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Superstructured ordering in AlGaAs and GaInP alloys.
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- Semiconductors, 2013, v. 47, n. 1, p. 1, doi. 10.1134/S106378261301020X
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Photoluminescence dynamics in InGaAsSb/AlGaAsSb quantum well nanostructures.
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- Semiconductors, 2013, v. 47, n. 1, p. 146, doi. 10.1134/S1063782612120202
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Semiconductor lasers with internal wavelength selection.
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- Semiconductors, 2013, v. 47, n. 1, p. 122, doi. 10.1134/S1063782613010247
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Photoelectric diagnostics method for InGaN/GaN multiple-quantum-well heterostructures.
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- Semiconductors, 2013, v. 47, n. 1, p. 58, doi. 10.1134/S1063782613010053
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Optical anisotropy of InGaAs quantum dots.
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- Semiconductors, 2013, v. 47, n. 1, p. 85, doi. 10.1134/S1063782613010077
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Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers.
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- Semiconductors, 2013, v. 47, n. 1, p. 73, doi. 10.1134/S1063782613010144
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Analysis of the temperature dependence of the capacitance-voltage characteristics of InGaN/GaN multiple quantum well light-emitting structures.
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- Semiconductors, 2013, v. 47, n. 1, p. 162, doi. 10.1134/S1063782612120147
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Properties of epitaxial (AlGaAs)C alloys grown by MOCVD autoepitaxy.
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- Semiconductors, 2013, v. 47, n. 1, p. 7, doi. 10.1134/S1063782613010211
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Long-term photoconductivity decay in n-InGaAs/GaAs heterostructures with coupled quantum wells under band-to-band excitation.
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- Semiconductors, 2013, v. 47, n. 1, p. 174, doi. 10.1134/S1063782612120196
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Optical spectroscopy of thin C:CdS composite films.
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- Semiconductors, 2013, v. 47, n. 1, p. 105, doi. 10.1134/S1063782613010235
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Modeling of high-power HEMT irradiated with high-energy photons.
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- Semiconductors, 2013, v. 47, n. 1, p. 152, doi. 10.1134/S1063782612120159
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Lateral growth and shape of semiconductor nanowires.
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- Semiconductors, 2013, v. 47, n. 1, p. 50, doi. 10.1134/S1063782613010107
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Edge electroluminescence in small-area silicon p- n diodes heavily doped with boron: Analysis of model representations.
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- Semiconductors, 2013, v. 47, n. 1, p. 110, doi. 10.1134/S1063782613010119
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Effect of rapid thermal annealing on the current-voltage characteristics of 4 H-SiC Schottky diodes.
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- Semiconductors, 2013, v. 47, n. 1, p. 81, doi. 10.1134/S1063782613010132
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Luminescence in ZnMnTe/ZnMgTe and CdMnTe/CdMgTe structures with different parameters of quantum wells.
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- Semiconductors, 2013, v. 47, n. 1, p. 45, doi. 10.1134/S1063782613010028
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MOCVD-grown heterostructures with GaAs/AlGaAs Superlattices: Growth features and optical and transport characteristics.
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- Semiconductors, 2013, v. 47, n. 1, p. 158, doi. 10.1134/S1063782612120032
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Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas.
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- Semiconductors, 2013, v. 47, n. 1, p. 33, doi. 10.1134/S1063782613010181
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Features of the time evolution of localized quantum states in graphene.
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- Semiconductors, 2013, v. 47, n. 1, p. 141, doi. 10.1134/S1063782612120111
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Temperature renormalization of the conduction electron g factor in silicon.
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- Semiconductors, 2013, v. 47, n. 1, p. 169, doi. 10.1134/S1063782612120093
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Features of the energy spectrum and hole-scattering mechanisms in PbSbTe.
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- Semiconductors, 2013, v. 47, n. 1, p. 16, doi. 10.1134/S106378261301017X
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Influence of the nature of a condensate material on the formation of an ensemble of islands during cryochemical synthesis from the vapor phase.
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- Semiconductors, 2013, v. 47, n. 1, p. 13, doi. 10.1134/S1063782613010065
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Photoluminescence in dense arrays of silicon nanocrystals: the role of the concentration and average size.
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- Semiconductors, 2013, v. 47, n. 1, p. 178, doi. 10.1134/S1063782612120044
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