Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 12

Results: 15

New system of self-assembled GaSb/GaP quantum dots.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1534, doi. 10.1134/S1063782612120020
By:
- Abramkin, D.;
- Putyato, M.;
- Gutakovskii, A.;
- Semyagin, B.;
- Preobrazhenskii, V.;
- Shamirzaev, T.
Publication type:
Article
High-temperature ferromagnetism of SiMn films fabricated by laser deposition using the droplet velocity separation technique.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1510, doi. 10.1134/S1063782612120123
By:
- Nikolaev, S.;
- Rylkov, V.;
- Aronzon, B.;
- Maslakov, K.;
- Likhachev, I.;
- Pashaev, E.;
- Chernoglazov, K.;
- Semisalova, A.;
- Perov, N.;
- Kul'bachinskii, V.;
- Novodvorsky, O.;
- Shorokhova, A.;
- Khramova, O.;
- Khaydukov, E.;
- Panchenko, V.
Publication type:
Article
Highly conducting and transparent GaO doped ZnO thin films prepared by thermal evaporation method.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1545, doi. 10.1134/S1063782612120135
By:
- Palimar, Sowmya;
- Bangera, Kasturi;
- Shivakumar, G.
Publication type:
Article
GaMnSb/InGaAs/GaAs heterostructure leds with a ferromagnetic injector layer.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1518, doi. 10.1134/S1063782612120056
By:
- Dorokhin, M.;
- Malysheva, E.;
- Zdoroveishev, A.;
- Danilov, Yu.;
- Kudrin, A.
Publication type:
Article
Optical monitoring of technological parameters during molecular-beam epitaxy.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1471, doi. 10.1134/S1063782612120214
By:
- Volkov, P.;
- Goryunov, A.;
- Luk'yanov, A.;
- Tertyshnik, A.;
- Novikov, A.;
- Yurasov, D.;
- Baidakova, N.;
- Mikhailov, N.;
- Remesnik, V.;
- Kuzmin, V.
Publication type:
Article
Comparative investigation of InP/InGaAs abrupt, setback, and heterostructure-emitter heterojunction bipolar transistors.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1539, doi. 10.1134/S1063782612120184
By:
- Tsai, Jung-Hui;
- Huang, Chia-Hong;
- Ma, Yung-Chun;
- Wu, You-Ren
Publication type:
Article
Photoinduced and equilibrium optical absorption in Ge/Si quantum dots.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1529, doi. 10.1134/S1063782612120226
By:
- Vorobjev, L.;
- Firsov, D.;
- Shalygin, V.;
- Panevin, V.;
- Sofronov, A.;
- Yakimov, A.;
- Dvurechenskii, A.;
- Tonkikh, A.;
- Werner, P.
Publication type:
Article
Method for taking into account the shift parameter in the deconvolution of the depth composition distribution of semiconductor structures from SIMS depth profiles.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1481, doi. 10.1134/S1063782612120238
By:
- Yunin, P.;
- Drozdov, Yu.;
- Drozdov, M.;
- Novikov, A.;
- Yurasov, D.
Publication type:
Article
Fabrication and properties of GaAsSb/GaAs heterostructures doped with a magnetic impurity.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1493, doi. 10.1134/S106378261212024X
By:
- Zvonkov, B.;
- Vikhrova, O.;
- Danilov, Yu.;
- Drozdov, Yu.;
- Drozdov, M.;
- Kalent'eva, I.;
- Kudrin, A.
Publication type:
Article
Generation of frequency-tunable far-infrared and terahertz radiation by optical nutations at intraband transitions in asymmetric semiconductor nanoheterostructures.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1487, doi. 10.1134/S106378261212010X
By:
- Kukushkin, V.
Publication type:
Article
Tunnel-coupled InGaAs/GaAs quantum wells: Structure, composition, and energy spectrum.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1476, doi. 10.1134/S106378261212007X
By:
- Khazanova, S.;
- Baidus', N.;
- Zvonkov, B.;
- Pavlov, D.;
- Malekhonova, N.;
- Degtyarev, V.;
- Smotrin, D.;
- Bobrov, I.
Publication type:
Article
Determination of the electron concentration and mobility in the vicinity of a quantum well and δ-doped layer in InGaAs/GaAs heterostructures.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1497, doi. 10.1134/S1063782612120160
By:
- Tikhov, S.;
- Baidus, N.;
- Biryukov, A.;
- Khazanova, S.
Publication type:
Article
Spin properties of trions in a dense quasi-2D electron gas.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1502, doi. 10.1134/S1063782612120081
By:
- Kochereshko, V.;
- Besombes, L.;
- Cox, R.;
- Mariette, H.;
- Wojtowicz, T.;
- Karczewski, G.;
- Kossut, J.
Publication type:
Article
Effect of He ion irradiation on the photosensitivity spectra of In(Ga)As/GaAs quantum well and quantum dot heterostructures.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1506, doi. 10.1134/S1063782612120068
By:
- Gorshkov, A.;
- Karpovich, I.;
- Pavlova, E.;
- Volkova, N.
Publication type:
Article
Admittance spectroscopy of ring diode InGaAs/InAlAs/InP quantum-well structures.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1524, doi. 10.1134/S1063782612120172
By:
- Tikhov, S.;
- Baidus, N.;
- Biryukov, A.;
- Degtyarev, V.
Publication type:
Article