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Synthesis and the Crystal Structure of Aqua-Dioxo-Nitrato-(2,2[sup ′],6[sup ′],2[sup ″]-Terpyridine)-Neptunium(V) [NpO[sub 2](NO[sub 3])(Terpy)(H[sub 2]O)].
Published in:
Crystallography Reports, 2003, v. 48, n. 1, p. 58, doi. 10.1134/1.1541744
By:
- Budantseva, N. A.;
- Andreev, G. B.;
- Fedoseev, A. M.;
- Antipin, M. Yu.;
- Krupa, J.-C.
Publication type:
Article
Crystal Structure of Samarium Hexamolybdoaluminate Sm[Al(OH)[sub 6]Mo[sub 6]O[sub 18]] · 11H[sub 2]O.
Published in:
Crystallography Reports, 2002, v. 47, n. 3, p. 394, doi. 10.1134/1.1481922
By:
- Andreev, G. B.;
- Fedoseev, A. M.;
- Budantseva, N. A.;
- Antipin, M. Yu.
Publication type:
Article
Synthesis and Crystal Structure of Bis(carbamide)chromatoneptunyl NpO[sub 2]CrO[sub 4] · 2[OC(NH[sub 2])[sub 2]].
Published in:
Crystallography Reports, 2001, v. 46, n. 3, p. 383, doi. 10.1134/1.1376464
By:
- Andreev, G. B.;
- Antipin, M. Yu.;
- Fedoseev, A. M.;
- Budantseva, N. A.
Publication type:
Article
POINTWISE APPROXIMATION OF CORNER SINGULARITIES FOR SINGULARLY PERTURBED ELLIPTIC PROBLEMS WITH CHARACTERISTIC LAYERS.
Published in:
International Journal of Numerical Analysis & Modeling, 2010, v. 7, n. 3, p. 416
By:
- Andreev, Vladimir B.
Publication type:
Article
Decomposition of the Solution to a Two-Dimensional Singularly Perturbed Convection–Diffusion Equation with Variable Coefficients in a Square and Estimates in Hölder Norms.
Published in:
Computational Mathematics & Mathematical Physics, 2021, v. 61, n. 2, p. 194, doi. 10.1134/S0965542521020044
By:
- Andreev, V. B.;
- Belukhina, I. G.
Publication type:
Article
Estimates in Hölder Classes for the Solution of an Inhomogeneous Dirichlet Problem for a Singularly Perturbed Homogeneous Convection–Diffusion Equation.
Published in:
Computational Mathematics & Mathematical Physics, 2019, v. 59, n. 2, p. 253, doi. 10.1134/S0965542519020039
By:
- Andreev, V. B.;
- Belukhina, I. G.
Publication type:
Article
Hölder Estimates for the Regular Component of the Solution to a Singularly Perturbed Convection-Diffusion Equation.
Published in:
Computational Mathematics & Mathematical Physics, 2017, v. 57, n. 12, p. 1935, doi. 10.1134/S0965542517120053
By:
- Andreev, V. B.
Publication type:
Article
Plasmaenhanced chemical vapor deposition of 99.95 28Si in form of nano and polycrystals using silicon tetrafluoride precursor.
Published in:
Crystal Research & Technology, 2010, v. 45, n. 9, p. 983
By:
- D. Pryakhin;
- B. Andreev;
- L. Gavrilenko;
- Yu. Drozdov;
- M. Drozdov;
- H.J. Pohl;
- V. Shashkin
Publication type:
Article
PECVD growth of crystalline silicon from its tetrafluoride.
Published in:
Crystal Research & Technology, 2010, v. 45, n. 9, p. 899, doi. 10.1002/crat.201000090
By:
- P. Sennikov;
- D. Pryakhin;
- N. Abrosimov;
- B. Andreev;
- Yu. Drozdov;
- M. Drozdov;
- A. Kuznetsov;
- A. Murel;
- H.J. Pohl;
- H. Riemann;
- V. Shashkin
Publication type:
Article
Synthesis and Characteristics of Double Np(VI) Potassium and Pu(VI) Potassium Silicates K[(NpO2)(SiO3OH)]·H2O and K[(PuO2)(SiO3OH)]·H2O.
Published in:
Radiochemistry, 2003, v. 45, n. 5, p. 488, doi. 10.1023/A:1026264026512
By:
- Andreev, G. B.;
- Fedoseev, A. M.;
- Perminov, V. P.;
- Budantseva, N. A.
Publication type:
Article
Tetramethylammonium Neptunium(IV) Isothiocyanate [N(CH3)4]4[Np(NCS)8].
Published in:
Radiochemistry, 2003, v. 45, n. 4, p. 335, doi. 10.1023/A:1026145117038
By:
- Budantseva, N. A.;
- Andreev, G. B.;
- Fedoseev, A. M.;
- Antipin, M. Yu.
Publication type:
Article
Features of Formation of InxGa1 –xN Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 231, doi. 10.1134/S1063782624030072
By:
- Kalinnikov, M. A.;
- Lobanov, D. N.;
- Kudryavtsev, K. E.;
- Andreev, B. A.;
- Yunin, P. A.;
- Krasilnikova, L. V.;
- Novikov, A. V.;
- Skorokhodov, E. V.;
- Skorokhodov, Z. F.
Publication type:
Article
Radiative Properties of Up-Conversion Coatings Formed on the Basis of Erbium-Doped Barium Titanate Xerogels.
Published in:
Semiconductors, 2021, v. 55, n. 9, p. 735, doi. 10.1134/S1063782621090062
By:
- Gaponenko, N. V.;
- Karnilava, Yu. D.;
- Lashkovskaya, E. I.;
- Zhivulko, V. D.;
- Mudryi, A. V.;
- Radyush, Yu. V.;
- Andreev, B. A.;
- Stepikhova, M. V.;
- Yablonskiy, A. N.;
- Gusev, S. A.;
- Subasri, R.;
- Reddy, D. S.
Publication type:
Article
Ge/Si Core/Shell Quantum Dots in an Alumina Matrix: Influence of the Annealing Temperature on the Optical Properties.
Published in:
Semiconductors, 2020, v. 54, n. 2, p. 181, doi. 10.1134/S1063782620020207
By:
- Sreseli, O. M.;
- Bert, N. A.;
- Nevedomskii, V. N.;
- Lihachev, A. I.;
- Yassievich, I. N.;
- Ershov, A. V.;
- Nezhdanov, A. V.;
- Mashin, A. I.;
- Andreev, B. A.;
- Yablonsky, A. N.
Publication type:
Article
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1357, doi. 10.1134/S1063782619100038
By:
- Andreev, B. A.;
- Lobanov, D. N.;
- Krasil'nikova, L. V.;
- Bushuykin, P. A.;
- Yablonskiy, A. N.;
- Novikov, A. V.;
- Davydov, V. Yu.;
- Yunin, P. A.;
- Kalinnikov, M. I.;
- Skorohodov, E. V.;
- Krasil'nik, Z. F.
Publication type:
Article
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1318, doi. 10.1134/S1063782619100154
By:
- Novikov, A. V.;
- Yurasov, D. V.;
- Baidakova, N. A.;
- Bushuykin, P. A.;
- Andreev, B. A.;
- Yunin, P. A.;
- Drozdov, M. N.;
- Yablonskiy, A. N.;
- Kalinnikov, M. A.;
- Krasilnik, Z. F.
Publication type:
Article
Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen.
Published in:
Semiconductors, 2017, v. 51, n. 12, p. 1537, doi. 10.1134/S1063782617120041
By:
- Bushuykin, P.;
- Novikov, A.;
- Andreev, B.;
- Lobanov, D.;
- Yunin, P.;
- Skorokhodov, E.;
- Krasil'nikova, L.;
- Demidov, E.;
- Savchenko, G.;
- Davydov, V.
Publication type:
Article
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements.
Published in:
Semiconductors, 2016, v. 50, n. 2, p. 261, doi. 10.1134/S1063782616020159
By:
- Lobanov, D.;
- Novikov, A.;
- Andreev, B.;
- Bushuykin, P.;
- Yunin, P.;
- Skorohodov, E.;
- Krasilnikova, L.
Publication type:
Article
Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy.
Published in:
Semiconductors, 2013, v. 47, n. 10, p. 1333, doi. 10.1134/S1063782613100035
By:
- Andreev, B.;
- Sobolev, N.;
- Denisov, D.;
- Shek, E.
Publication type:
Article
Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping.
Published in:
Semiconductors, 2012, v. 46, n. 11, p. 1407, doi. 10.1134/S1063782612110231
By:
- Yablonskiy, A.;
- Andreev, B.;
- Kryzhkov, D.;
- Kuznetsov, V.;
- Shengurov, D.;
- Krasilnik, Z.
Publication type:
Article
Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation.
Published in:
Semiconductors, 2012, v. 46, n. 11, p. 1372, doi. 10.1134/S1063782612110036
By:
- Andreev, B.;
- Krasilnik, Z.;
- Kryzhkov, D.;
- Kuznetsov, V.;
- Yablonskiy, A.
Publication type:
Article
Electroluminescence at a wavelength of 1.54 μm in Si:Er/Si structures consisting of a number of p-n junctions.
Published in:
Semiconductors, 2011, v. 45, n. 11, p. 1430, doi. 10.1134/S1063782611110169
By:
- Kuznetsov, V.;
- Stepihova, M.;
- Shmagin, V.;
- Marychev, M.;
- Alyabina, N.;
- Kuznetsov, M.;
- Andreev, B.;
- Kornaukhov, A.;
- Gorshkov, O.;
- Krasilnik, Z.
Publication type:
Article
Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy.
Published in:
Semiconductors, 2011, v. 45, n. 1, p. 130, doi. 10.1134/S1063782611010143
By:
- Kuznetsov, V.;
- Shmagin, V.;
- Drozdov, M.;
- Marychev, M.;
- Kudryavtsev, K.;
- Kuznetsov, M.;
- Andreev, B.;
- Kornaukhov, A.;
- Krasilnik, Z.
Publication type:
Article
Electroluminescence at a wavelength of 1.5 μm in Si:Er/Si diode structures doped with Al, Ga, and B acceptors.
Published in:
Semiconductors, 2010, v. 44, n. 12, p. 1597, doi. 10.1134/S1063782610120110
By:
- Kuznetsov, V.;
- Shmagin, V.;
- Marychev, M.;
- Kudryavtsev, K.;
- Kuznetsov, M.;
- Andreev, B.;
- Kornaukhov, A.;
- Gorshkov, O.;
- Krasilnik, Z.
Publication type:
Article
Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures.
Published in:
Semiconductors, 2010, v. 44, n. 11, p. 1472, doi. 10.1134/S1063782610110187
By:
- Yablonskiy, A.;
- Andreev, B.;
- Krasilnikova, L.;
- Kryzhkov, D.;
- Kuznetsov, V.;
- Krasilnik, Z.
Publication type:
Article
GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 405, doi. 10.1134/S1063782610030231
By:
- Sadofyev, Yu. G.;
- Samal, N.;
- Andreev, B. A.;
- Gavrilenko, V. I.;
- Morozov, S. V.;
- Spivakov, A. G.;
- Yablonsky, A. N.
Publication type:
Article
Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride.
Published in:
Semiconductors, 2009, v. 43, n. 7, p. 968, doi. 10.1134/S1063782609070288
By:
- Sennikov, P. G.;
- Golubev, S. V.;
- Shashkin, V. I;
- Pryakhin, D. A.;
- Drozdov, M. N.;
- Andreev, B. A.;
- Drozdov, Yu. N.;
- Kuznetsov, A. S.;
- Pohl, H. -J.
Publication type:
Article
Electrical properties of Si:Er/Si layers grown by sublimation molecular-beam epitaxy.
Published in:
Semiconductors, 2008, v. 42, n. 2, p. 137, doi. 10.1134/S1063782608020036
By:
- Belova, O.;
- Shabanov, V.;
- Kasatkin, A.;
- Kuznetsov, O.;
- Yablonskiĭ, A.;
- Kuznetsov, M.;
- Kuznetsov, V.;
- Kornaukhov, A.;
- Andreev, B.;
- Krasil’nik, Z.
Publication type:
Article
Erbium ion electroluminescence in p ++/ n +/ n-Si:Er/ n ++ silicon diode structures.
Published in:
Semiconductors, 2007, v. 41, n. 11, p. 1312, doi. 10.1134/S1063782607110073
By:
- Kuznetsov, V. P.;
- Remizov, D. Yu.;
- Shmagin, V. B.;
- Kudryavtsev, K. E.;
- Shabanov, V. N.;
- Obolensky, S. V.;
- Belova, O. V.;
- Kuznetsov, M. V.;
- Kornaukhov, A. V.;
- Andreev, B. A.;
- Krasil'nik, Z. F.
Publication type:
Article
Light-Emitting Si:Er Structures Produced by Molecular-Beam Epitaxy: High-Resolution Photoluminescence Spectroscopy.
Published in:
Semiconductors, 2005, v. 39, n. 12, p. 1399, doi. 10.1134/1.2140312
By:
- Kryzhkov, D. I.;
- Sobolev, N. A.;
- Andreev, B. A.;
- Denisov, D. V.;
- Krasil'nik, Z. F.;
- Shek, E. I.
Publication type:
Article
Spectroscopic Parameters of the Absorption Bands Related to the Local Vibrational Modes of Carbon and Oxygen Impurities in Silicon Enriched with 28Si, 29Si, and 30Si Isotopes.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 300, doi. 10.1134/1.1882791
By:
- Sennikov, P. G.;
- Kotereva, T. V.;
- Kurganov, A. G.;
- Andreev, B. A.;
- Niemann, H.;
- Schiel, D.;
- Emtsev, V. V.;
- Pohl, H.-J.
Publication type:
Article
Photoluminescence at 1.5 μm from Single-Crystal Silicon Layers Subjected to Mechanical Treatment.
Published in:
Semiconductors, 2003, v. 37, n. 12, p. 1380, doi. 10.1134/1.1634657
By:
- Batalov, R. I.;
- Bayazitov, R. M.;
- Andreev, B. A.;
- Kryzhkov, D. I.;
- Terukov, E. I.;
- Kudoyarova, V. Kh.
Publication type:
Article
Radioluminography measurement of tritium distribution.
Published in:
Atomic Energy, 2008, v. 104, n. 3, p. 218, doi. 10.1007/s10512-008-9019-8
By:
- L. Rivkis;
- I. Prykina;
- V. Filin;
- V. Bulkin;
- B. Andreev
Publication type:
Article
Demercaptanization of Light Hydrocarbon Fractions with Strong Aqueous Ammonia without Producing Sulfur Caustic Wastewater.
Published in:
Theoretical Foundations of Chemical Engineering, 2020, v. 54, n. 5, p. 1078, doi. 10.1134/S004057952005005X
By:
- Andreev, B. V.;
- Ustinov, A. S.;
- Akopyan, A. V.;
- Anisimov, A. V.;
- Eseva, E. A.;
- Kleimenov, A. V.;
- Kondrashev, D. O.;
- Khrapov, D. V.;
- Esipenko, R. V.
Publication type:
Article
Treatment of Sulfide Alkali Waste Waters from Mercaptans Using Distillation.
Published in:
Theoretical Foundations of Chemical Engineering, 2018, v. 52, n. 4, p. 673, doi. 10.1134/S0040579518040024
By:
- Anisimov, A. V.;
- Andreev, B. V.;
- Eseva, E. A.;
- Polikarpova, P. D.;
- Tarakanova, A. V.;
- Ustinov, A. S.
Publication type:
Article
Superconvergence Postprocessing for Eigenvalues.
Published in:
Computational Methods in Applied Mathematics, 2002, v. 2, n. 2, p. 171, doi. 10.2478/cmam-2002-0011
By:
- Racheva, Milena R.;
- Andreev, Andrey B.
Publication type:
Article
Superconvergence of the gradient for quadratic triangular finite elements.
Published in:
Numerical Methods for Partial Differential Equations, 1988, v. 4, n. 1, p. 15, doi. 10.1002/num.1690040103
By:
- Andreev, A. B.;
- Lazarov, Raičo D.
Publication type:
Article
An optimal order numerical quadrature approximation of a planar isoparametric eigenvalue problem on triangular finite element meshes.
Published in:
Calcolo, 2005, v. 42, n. 2, p. 47, doi. 10.1007/s10092-005-0097-x
By:
- Andreev, A. B.;
- Petrov, M. S.;
- Todorov, T. D.
Publication type:
Article
On Nonergodicity of Some Continuous-Time Markov Chains.
Published in:
Journal of Mathematical Sciences, 2004, v. 122, n. 4, p. 3332, doi. 10.1023/B:JOTH.0000031878.03206.fc
By:
- Andreev, D. B.;
- Krylov, E. A.;
- Zeifman, A. I.
Publication type:
Article
On the accuracy of grid approximations to nonsmooth solutions of a singularly perturbed reaction-diffusion equation in the square.
Published in:
Differential Equations, 2006, v. 42, n. 7, p. 954, doi. 10.1134/S0012266106070044
By:
- Andreev, V. B.
Publication type:
Article
On the Theory of Difference Schemes for Singularly Perturbed Equations.
Published in:
Differential Equations, 2004, v. 40, n. 7, p. 959, doi. 10.1023/B:DIEQ.0000047027.16299.38
By:
- Andreev, V. B.
Publication type:
Article
Isoparametric finite‐element approximation of a Steklov eigenvalue problem.
Published in:
IMA Journal of Numerical Analysis, 2004, v. 24, n. 2, p. 309, doi. 10.1093/imanum/24.2.309
By:
- Andreev, Andrey B.;
- Todorov, Todor D.
Publication type:
Article
Doping of Silicon Layers from a Sublimating Erbium Source in Molecular Beam Epitaxy.
Published in:
Technical Physics Letters, 2000, v. 26, n. 1, p. 41, doi. 10.1134/1.1262734
By:
- Svetlov, S. P.;
- Chalkov, V. Yu.;
- Shengurov, V. G.;
- Uskova, E. A.;
- Maksimov, G. A.;
- Andreev, B. A.;
- Krasil’nik, Z. F.;
- Stepikhova, M. V.;
- Ellmer, H.
Publication type:
Article
Luminescent Si–Ge Solid Solution Layers Er-Doped in Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2002, v. 36, n. 6, p. 625, doi. 10.1134/1.1485659
By:
- Shengurov, V. G.;
- Svetlov, S. P.;
- Chalkov, V. Yu.;
- Andreev, B. A.;
- Krasil’nik, Z. F.;
- Ber, B. Ya.;
- Drozdov, Yu. N.;
- Yablonsky, A. N.
Publication type:
Article
Electrically Active Centers in Si:Er Light-Emitting Layers Grown by Sublimation Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2002, v. 36, n. 2, p. 171, doi. 10.1134/1.1453432
By:
- Shmagin, V. B.;
- Andreev, B. A.;
- Antonov, A. V.;
- Krasil’nik, Z. F.;
- Kuznetsov, V. P.;
- Kuznetsov, O. A.;
- Uskova, E. A.;
- Ammerlaan, C. A. J.;
- Pensl, G.
Publication type:
Article
Simultaneous Doping of Silicon Layers with Erbium and Oxygen in the Course of Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2001, v. 35, n. 8, p. 918, doi. 10.1134/1.1393027
By:
- Shengurov, V. G.;
- Svetlov, S. P.;
- Chalkov, V. Yu.;
- Maksimov, G. A.;
- Krasil’nik, Z. F.;
- Andreev, B. A.;
- Stepikhova, M. V.;
- Shengurov, D. V.;
- Palmetshofer, L.;
- Ellmer, H.
Publication type:
Article
Shallow Acceptors in Strained Ge/Ge[sub 1 – ][sub x]Si[sub x] Heterostructures with Quantum Wells.
Published in:
Semiconductors, 2000, v. 34, n. 5, p. 563, doi. 10.1134/1.1188029
By:
- Aleshkin, V. Ya.;
- Andreev, B. A.;
- Gavrilenko, V. I.;
- Erofeeva, I. V.;
- Kozlov, D. V.;
- Kuznetsov, O. A.
Publication type:
Article
Low-temperature photoluminescence in holmium-doped silicon.
Published in:
Semiconductors, 1999, v. 33, n. 4, p. 407, doi. 10.1134/1.1187703
By:
- Andreev, B. A.;
- Sobolev, N. A.;
- Nikolaev, Yu. A.;
- Kuritsin, D. I.;
- Makovijchuk, M. I.;
- Parshin, E. O.
Publication type:
Article
Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 131, doi. 10.1134/1.1187658
By:
- Andreev, A. Yu.;
- Andreev, B. A.;
- Drozdov, M. N.;
- Krasil’nik, Z. F.;
- Stepikhova, M. V.;
- Shmagin, V. B.;
- Kuznetsov, V. P.;
- Rubtsova, R. A.;
- Uskova, E. A.;
- Karpov, Yu. A.;
- Ellmer, H.;
- Palmetshofer, L.;
- Piplits, K.;
- Hutter, H.
Publication type:
Article
Isotope-modified silicon layers obtained by plasma enhanced chemical vapor deposition from gaseous silicon tetrafluoride.
Published in:
Technical Physics Letters, 2009, v. 35, n. 10, p. 948, doi. 10.1134/S1063785009100216
By:
- Sennikov, P. G.;
- Golubev, S. V.;
- Shashkin, V. I.;
- Pryakhin, D. A.;
- Drozdov, M. N.;
- Andreev, B. A.;
- Pohl, H.-J.;
- Godisov, O. N.
Publication type:
Article

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