Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 9

Results: 22

Terahertz emission upon the interband excitation of GaN layers.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1135, doi. 10.1134/S1063782612090230

By:

Zakhar'in, A.;
Bobylev, A.;
Andrianov, A.

Publication type:

Article

On the band gap in (InS)(CuInS) alloy single crystals.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1122, doi. 10.1134/S1063782612090047

By:

Bodnar, I.;
Shatalova, V.

Publication type:

Article

Effect of annealing on the spectra of nuclear quadrupole resonance in gallium-indium selenides and characteristics of structures based on these materials.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1145, doi. 10.1134/S1063782612090126

By:

Kovalyuk, Z.;
Sydor, O.;
Lastivka, G.;
Khandozhko, A.

Publication type:

Article

n-Si bifacial concentrator solar cell.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1194, doi. 10.1134/S1063782612090229

By:

Untila, G.;
Kost, T.;
Chebotareva, A.;
Zaks, M.;
Sitnikov, A.;
Solodukha, O.;
Shvarts, M.

Publication type:

Article

Nature of the electronic component of the thermal phase transition in VO films.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1171, doi. 10.1134/S1063782612090096

By:

Ilinskiy, A.;
Kvashenkina, O.;
Shadrin, E.

Publication type:

Article

Rashba spin splitting and exchange enhancement of the g factor in InAs/AlSb heterostructures with a two-dimensional electron gas.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1163, doi. 10.1134/S1063782612090138

By:

Krishtopenko, S.;
Kalinin, K.;
Gavrilenko, V.;
Sadofyev, Yu.;
Goiran, M.

Publication type:

Article

Electrical properties of anisotype heterojunctions n-CdZnO/ p-CdTe.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1152, doi. 10.1134/S1063782612090059

By:

Brus, V.;
Ilashchuk, M.;
Khomyak, V.;
Kovalyuk, Z.;
Maryanchuk, P.;
Ulyanytsky, K.

Publication type:

Article

Overheating of an optically triggered SiC thyristor during switch-on and turn-on spread.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1201, doi. 10.1134/S1063782612090151

By:

Levinshtein, M.;
Mnatsakanov, T.;
Yurkov, S.;
Palmour, J.

Publication type:

Article

Transformation of a SiC/por-SiC/TiO structure during rapid thermal annealing.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1221, doi. 10.1134/S1063782612090114

By:

Konakova, R.;
Kolomys, O.;
Lytvyn, O.;
Okhrimenko, O.;
Strelchuk, V.;
Svetlichnyi, A.;
Linets, L.

Publication type:

Article

Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductor.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1126, doi. 10.1134/S1063782612090060

By:

Chen, Chun-Nan;
Chang, Sheng-Hsiung;
Su, Wei-Long;
Jen, Jen-Yi;
Li, Yiming

Publication type:

Article

Features of the conduction mechanisms of the n-HfNiSn semiconductor heavily doped with the Co acceptor impurity.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1106, doi. 10.1134/S1063782612090199

By:

Romaka, V.;
Rogl, P.;
Stadnyk, Yu.;
Hlil, E.;
Krayovskyy, V.;
Horyn, A.

Publication type:

Article

Conductivity of SeAs chalcogenide glassy semiconductor layers containing the EuF rare-earth impurity in high electric fields.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1114, doi. 10.1134/S1063782612090102

By:

Isayev, A.;
Mekhtieva, S.;
Garibova, S.;
Zeynalov, V.

Publication type:

Article

Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050-1070 nm).

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1211, doi. 10.1134/S1063782612090217

By:

Shashkin, I.;
Vinokurov, D.;
Lyutetskiy, A.;
Nikolaev, D.;
Pikhtin, N.;
Rudova, N.;
Sokolova, Z.;
Slipchenko, S.;
Stankevich, A.;
Shamakhov, V.;
Veselov, D.;
Bakhvalov, K.;
Tarasov, I.

Publication type:

Article

Thermal delocalization of carriers in semiconductor lasers (λ = 1010-1070 nm).

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1207, doi. 10.1134/S1063782612090205

By:

Shashkin, I.;
Vinokurov, D.;
Lyutetskiy, A.;
Nikolaev, D.;
Pikhtin, N.;
Rastegaeva, M.;
Sokolova, Z.;
Slipchenko, S.;
Stankevich, A.;
Shamakhov, V.;
Veselov, D.;
Bondarev, A.;
Tarasov, I.

Publication type:

Article

Raman scattering in the Bi(TeSe) solid solution films.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1140, doi. 10.1134/S1063782612090023

By:

Abdullaev, N.;
Kerimova, A.;
Kahramanov, S.;
Bayramov, A.;
Miyamoto, H.;
Wakita, K.;
Mamedov, N.;
Nemov, S.

Publication type:

Article

Investigation of the promising thermoelectric compound CuAlO by the method of nuclear quadrupole resonance in Cu.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1102, doi. 10.1134/S1063782612090163

By:

Matukhin, V.;
Khabibullin, I.;
Shulgin, D.;
Schmidt, S.;
Terukov, E.

Publication type:

Article

Electrical and gas-sensitive properties of a SnO-based nanocomposite with multiwalled carbon nanotubes.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1190, doi. 10.1134/S1063782612090187

By:

Rembeza, S.;
Shmatova, Yu.;
Svistova, T.;
Rembeza, E.;
Kosheleva, N.

Publication type:

Article

Systematic features of the variation in the crystal-chemical, electrical, and surface physicochemical properties of AB materials on the energy of the inverse adsorption piezoelectric effect.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1097, doi. 10.1134/S1063782612090084

By:

Fedyaeva, O.

Publication type:

Article

Effect of parabenzoquinone adsorption on the magnetic properties of nanostructured silicon.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1119, doi. 10.1134/S1063782612090035

By:

Antropov, I.;
Semisalova, A.;
Konstantinova, E.;
Perov, N.;
Kozlov, S.

Publication type:

Article

On the effect of the spontaneous polarization of a SiC substrate on a buffer layer and quasi-free single-sheet graphene.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1186, doi. 10.1134/S1063782612090072

By:

Davydov, S.

Publication type:

Article

Refined model for the current-voltage characteristics of quantum-well infrared photodetectors.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1158, doi. 10.1134/S106378261209014X

By:

Kulikov, V.

Publication type:

Article

Formation technology of through metallized holes to sources of high-power GaN/SiC high electron mobility transistors.

Published in:

Semiconductors, 2012, v. 46, n. 9, p. 1216, doi. 10.1134/S1063782612090175

By:

Osipov, K.;
Velikovskiy, L.

Publication type:

Article