Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 9
Results: 22
Rashba spin splitting and exchange enhancement of the g factor in InAs/AlSb heterostructures with a two-dimensional electron gas.
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- Semiconductors, 2012, v. 46, n. 9, p. 1163, doi. 10.1134/S1063782612090138
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Electrical properties of anisotype heterojunctions n-CdZnO/ p-CdTe.
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- Semiconductors, 2012, v. 46, n. 9, p. 1152, doi. 10.1134/S1063782612090059
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n-Si bifacial concentrator solar cell.
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- Semiconductors, 2012, v. 46, n. 9, p. 1194, doi. 10.1134/S1063782612090229
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Transformation of a SiC/por-SiC/TiO structure during rapid thermal annealing.
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- Semiconductors, 2012, v. 46, n. 9, p. 1221, doi. 10.1134/S1063782612090114
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Nature of the electronic component of the thermal phase transition in VO films.
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- Semiconductors, 2012, v. 46, n. 9, p. 1171, doi. 10.1134/S1063782612090096
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Conductivity of SeAs chalcogenide glassy semiconductor layers containing the EuF rare-earth impurity in high electric fields.
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- Semiconductors, 2012, v. 46, n. 9, p. 1114, doi. 10.1134/S1063782612090102
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Terahertz emission upon the interband excitation of GaN layers.
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- Semiconductors, 2012, v. 46, n. 9, p. 1135, doi. 10.1134/S1063782612090230
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Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050-1070 nm).
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- Semiconductors, 2012, v. 46, n. 9, p. 1211, doi. 10.1134/S1063782612090217
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Effect of annealing on the spectra of nuclear quadrupole resonance in gallium-indium selenides and characteristics of structures based on these materials.
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- Semiconductors, 2012, v. 46, n. 9, p. 1145, doi. 10.1134/S1063782612090126
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Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductor.
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- Semiconductors, 2012, v. 46, n. 9, p. 1126, doi. 10.1134/S1063782612090060
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Features of the conduction mechanisms of the n-HfNiSn semiconductor heavily doped with the Co acceptor impurity.
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- Semiconductors, 2012, v. 46, n. 9, p. 1106, doi. 10.1134/S1063782612090199
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Overheating of an optically triggered SiC thyristor during switch-on and turn-on spread.
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- Semiconductors, 2012, v. 46, n. 9, p. 1201, doi. 10.1134/S1063782612090151
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On the band gap in (InS)(CuInS) alloy single crystals.
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- Semiconductors, 2012, v. 46, n. 9, p. 1122, doi. 10.1134/S1063782612090047
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Thermal delocalization of carriers in semiconductor lasers (λ = 1010-1070 nm).
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- Semiconductors, 2012, v. 46, n. 9, p. 1207, doi. 10.1134/S1063782612090205
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Raman scattering in the Bi(TeSe) solid solution films.
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- Semiconductors, 2012, v. 46, n. 9, p. 1140, doi. 10.1134/S1063782612090023
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On the effect of the spontaneous polarization of a SiC substrate on a buffer layer and quasi-free single-sheet graphene.
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- Semiconductors, 2012, v. 46, n. 9, p. 1186, doi. 10.1134/S1063782612090072
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Investigation of the promising thermoelectric compound CuAlO by the method of nuclear quadrupole resonance in Cu.
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- Semiconductors, 2012, v. 46, n. 9, p. 1102, doi. 10.1134/S1063782612090163
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Electrical and gas-sensitive properties of a SnO-based nanocomposite with multiwalled carbon nanotubes.
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- Semiconductors, 2012, v. 46, n. 9, p. 1190, doi. 10.1134/S1063782612090187
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Systematic features of the variation in the crystal-chemical, electrical, and surface physicochemical properties of AB materials on the energy of the inverse adsorption piezoelectric effect.
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- Semiconductors, 2012, v. 46, n. 9, p. 1097, doi. 10.1134/S1063782612090084
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Effect of parabenzoquinone adsorption on the magnetic properties of nanostructured silicon.
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- Semiconductors, 2012, v. 46, n. 9, p. 1119, doi. 10.1134/S1063782612090035
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Refined model for the current-voltage characteristics of quantum-well infrared photodetectors.
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- Semiconductors, 2012, v. 46, n. 9, p. 1158, doi. 10.1134/S106378261209014X
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Formation technology of through metallized holes to sources of high-power GaN/SiC high electron mobility transistors.
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- Semiconductors, 2012, v. 46, n. 9, p. 1216, doi. 10.1134/S1063782612090175
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