Thermoelectric figure of merit for bulk nanostructured composites with distributed parameters.
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- Semiconductors, 2012, v. 46, n. 5, p. 659, doi. 10.1134/S106378261205020X
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- Article
Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 5
Results: 23
1
2
Electrophysical properties of solid solutions of silver in PbTe.
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- Semiconductors, 2012, v. 46, n. 5, p. 595, doi. 10.1134/S1063782612050193
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- Article
3
Influence of inhomogeneous broadening and deliberately introduced disorder on the width of the lasing spectrum of a quantum dot laser.
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- Semiconductors, 2012, v. 46, n. 5, p. 684, doi. 10.1134/S1063782612050120
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- Article
4
Luminescence of CdMnTe/CdMgTe structures with periodically arranged narrow-gap inclusions.
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- Semiconductors, 2012, v. 46, n. 5, p. 637, doi. 10.1134/S1063782612050028
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- Article
5
Nonlinear thermal model of a heterojunction-based light-emitting diode.
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- Semiconductors, 2012, v. 46, n. 5, p. 673, doi. 10.1134/S1063782612050181
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- Article
6
Thermal expansion of CuInS single crystals and the temperature dependence of their band gap.
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- Semiconductors, 2012, v. 46, n. 5, p. 602, doi. 10.1134/S1063782612050089
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- Article
7
Effect of a bichromatic electric field on the current-voltage characteristic of a graphene-based superlattice.
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- Semiconductors, 2012, v. 46, n. 5, p. 666, doi. 10.1134/S1063782612050144
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- Article
8
Long-range effect of the irradiation of silicon with light on the Schottky-barrier photovoltage.
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- Semiconductors, 2012, v. 46, n. 5, p. 622, doi. 10.1134/S1063782612050235
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- Article
9
Transport properties of InGaAs/GaAs Heterostructures with δ-doped quantum wells.
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- Semiconductors, 2012, v. 46, n. 5, p. 631, doi. 10.1134/S1063782612050053
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- Publication type:
- Article
10
Formation and annealing of radiation defects in tin-doped p-type germanium crystals.
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- Semiconductors, 2012, v. 46, n. 5, p. 611, doi. 10.1134/S1063782612050156
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- Article
11
Exciton photoluminescence and energy in a percolation cluster of ZnSe quantum dots as a fractal object.
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- Semiconductors, 2012, v. 46, n. 5, p. 625, doi. 10.1134/S1063782612050090
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- Publication type:
- Article
12
Mössbauer and magnetic studies of the ternary compound FeInSe.
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- Semiconductors, 2012, v. 46, n. 5, p. 606, doi. 10.1134/S1063782612050077
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- Article
13
Mechanism of terahertz photoconductivity in semimetallic HgTe/CdHgTe quantum wells.
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- Semiconductors, 2012, v. 46, n. 5, p. 655, doi. 10.1134/S1063782612050247
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- Publication type:
- Article
14
Effect of the Cu content and ZnS treatment on the characteristics of synthesized ZnS:(Cu, Cl) electroluminescent phosphors.
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- Semiconductors, 2012, v. 46, n. 5, p. 696, doi. 10.1134/S1063782612050223
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- Article
15
CdSe semiconducting layers produced by pulse electrolysis.
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- Semiconductors, 2012, v. 46, n. 5, p. 615, doi. 10.1134/S1063782612050168
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- Article
16
Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ = 4.5 μm) operating at temperatures of 25-80°C.
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- Semiconductors, 2012, v. 46, n. 5, p. 690, doi. 10.1134/S1063782612050119
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- Article
17
Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained SiGe buffer layers.
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- Semiconductors, 2012, v. 46, n. 5, p. 647, doi. 10.1134/S1063782612050211
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- Article
18
Experimental evaluation of the carrier lifetime in GaAs grown at low temperature.
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- Semiconductors, 2012, v. 46, n. 5, p. 619, doi. 10.1134/S106378261205017X
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- Publication type:
- Article
19
Effect of charged dislocation walls on mobility in GaN epitaxial layers.
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- Semiconductors, 2012, v. 46, n. 5, p. 598, doi. 10.1134/S1063782612050132
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- Article
20
Silicon field-effect transistors as radiation detectors for the Sub-THz range.
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- Semiconductors, 2012, v. 46, n. 5, p. 678, doi. 10.1134/S1063782612050107
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- Article
21
Phase transitions in thin GeSbTe chalcogenide films according to Raman spectroscopy data.
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- Semiconductors, 2012, v. 46, n. 5, p. 591, doi. 10.1134/S1063782612050041
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- Article
22
Measurement of Young's modulus of GaAs nanowires growing obliquely on a substrate.
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- Semiconductors, 2012, v. 46, n. 5, p. 641, doi. 10.1134/S106378261205003X
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- Article
23
Physics of switching and memory effects in chalcogenide glassy semiconductors.
- Published in:
- Semiconductors, 2012, v. 46, n. 5, p. 559, doi. 10.1134/S1063782612050065
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- Publication type:
- Article