Phenomenon of the inverse adsorption piezoelectric effect in CdTe and CdHgTe semiconductors.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 155, doi. 10.1134/S1063782612020091
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 2
Results: 27
1
2
Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff λ = 5.2 μm).
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- Semiconductors, 2012, v. 46, n. 2, p. 247, doi. 10.1134/S1063782612020157
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- Publication type:
- Article
3
Effect of annealing on the luminescence of p-CuI crystals.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 149, doi. 10.1134/S1063782612020133
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- Publication type:
- Article
4
Kinetics of crack formation in porous silicon.
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- Semiconductors, 2012, v. 46, n. 2, p. 137, doi. 10.1134/S1063782612020108
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- Publication type:
- Article
5
Influence of defect formation as a result of incorporation of a Mn δ layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 184, doi. 10.1134/S106378261202011X
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- Publication type:
- Article
6
Determination of the ionization energy of vanadium levels in zinc selenide.
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- Semiconductors, 2012, v. 46, n. 2, p. 141, doi. 10.1134/S1063782612020170
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- Publication type:
- Article
7
Combined single-crystalline and polycrystalline CVD diamond substrates for diamond electronics.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 263, doi. 10.1134/S1063782612020248
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- Publication type:
- Article
8
Photosensitivity of ZnO/CdS/Cu(In,Ga)Se/Mo thin-film solar cells fabricated on various substrates.
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- Semiconductors, 2012, v. 46, n. 2, p. 221, doi. 10.1134/S1063782612020200
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- Publication type:
- Article
9
Generation of terahertz radiation by a surface ballistic photocurrent in semiconductors under subpicosecond laser excitation.
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- Semiconductors, 2012, v. 46, n. 2, p. 143, doi. 10.1134/S1063782612020261
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- Publication type:
- Article
10
Study of the emission extraction efficiency of mesa-LEDs with a narrow-gap InAsSb active region.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 236, doi. 10.1134/S1063782612020121
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- Publication type:
- Article
11
Features of simultaneous ground- and excited-state lasing in quantum dot lasers.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 231, doi. 10.1134/S1063782612020285
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- Publication type:
- Article
12
High-order diffraction gratings for high-power semiconductor lasers.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 241, doi. 10.1134/S1063782612020236
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- Publication type:
- Article
13
Numerical simulation of optical feedback on a quantum dot lasers.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 213, doi. 10.1134/S1063782612020029
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- Publication type:
- Article
14
Implantation of sodium ions into germanium.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 257, doi. 10.1134/S1063782612020169
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- Publication type:
- Article
15
Generation of electromagnetic radiation based on nanotubes under a constant electric field and an electromagnetic wave field.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 159, doi. 10.1134/S1063782612020212
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- Publication type:
- Article
16
The effect of annealing on the properties of GaO anodic films.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 267, doi. 10.1134/S1063782612020145
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- Publication type:
- Article
17
Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 203, doi. 10.1134/S1063782612020054
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- Publication type:
- Article
18
Structural transformations in ZnS:Cu in the course of thermal annealing.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 188, doi. 10.1134/S1063782612020030
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- Publication type:
- Article
19
Insulator band gap in single-side-hydrogenated graphene nanoribbons.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 199, doi. 10.1134/S1063782612020182
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- Publication type:
- Article
20
Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 175, doi. 10.1134/S1063782612020224
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- Publication type:
- Article
21
Adsorption-induced energy gap in the density of states of single-sheet graphene.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 193, doi. 10.1134/S1063782612020066
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- Publication type:
- Article
22
Conduction mechanism of an infrared emitting diode: Impedance spectroscopy and current-voltage analysis.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 251, doi. 10.1134/S106378261202008X
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- Publication type:
- Article
23
Exciton states in quasi-zero-dimensional semiconductor nanosystems.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 165, doi. 10.1134/S1063782612020194
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- Publication type:
- Article
24
Formation of (Ga,Mn)As nanowires and study of their magnetic properties.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 179, doi. 10.1134/S1063782612020042
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- Publication type:
- Article
25
Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 225, doi. 10.1134/S1063782612020273
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- Publication type:
- Article
26
Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 208, doi. 10.1134/S106378261202025X
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- Publication type:
- Article
27
Heat induced nanoforms of zinc oxide quantum dots and their characterization.
- Published in:
- Semiconductors, 2012, v. 46, n. 2, p. 171, doi. 10.1134/S1063782612020078
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- Publication type:
- Article