Works matching IS 10637826 AND DT 2012 AND VI 46 AND IP 1
Results: 19
Mössbauer studies of two-electron centers with negative correlation energy in crystalline and amorphous semiconductors.
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- Semiconductors, 2012, v. 46, n. 1, p. 1, doi. 10.1134/S1063782612010071
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Spin interference of holes in silicon nanosandwiches.
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- Semiconductors, 2012, v. 46, n. 1, p. 75, doi. 10.1134/S1063782612010034
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Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs.
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- Semiconductors, 2012, v. 46, n. 1, p. 93, doi. 10.1134/S1063782612010186
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Transverse current rectification in a graphene-based superlattice.
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- Semiconductors, 2012, v. 46, n. 1, p. 109, doi. 10.1134/S1063782612010216
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The de Haas-van Alphen effect in nanostructures of cadmium fluoride.
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- Semiconductors, 2012, v. 46, n. 1, p. 87, doi. 10.1134/S1063782612010022
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Vibronic states in organic semiconductors based on non-metal naphthalocyanine. Detection of heterocyclic phthalocyanine compounds in a flexible dielectric matrix.
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- Semiconductors, 2012, v. 46, n. 1, p. 99, doi. 10.1134/S1063782612010046
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Transport and partial localization of electrons in strained short-period semiconductor superlattices.
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- Semiconductors, 2012, v. 46, n. 1, p. 67, doi. 10.1134/S1063782612010095
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Laser-induced desorption of atomic and molecular fragments from a tin dioxide surface modified by a thin organic covering of copper phthalocyanine.
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- Semiconductors, 2012, v. 46, n. 1, p. 45, doi. 10.1134/S1063782612010125
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Modelling and simulation of saturation region in double gate graphene nanoribbon transistors.
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- Semiconductors, 2012, v. 46, n. 1, p. 126, doi. 10.1134/S1063782612010101
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Electrical and gas sensing properties of por-Si/SnO nanocomposite layers.
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- Semiconductors, 2012, v. 46, n. 1, p. 105, doi. 10.1134/S1063782612010058
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Natural fluctuations in tunneling-current distribution over the area of a reverse-biased silicon p-n junction.
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- Semiconductors, 2012, v. 46, n. 1, p. 130, doi. 10.1134/S1063782612010137
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Change in the electronic properties of an InAs (111)A surface at oxygen and fluorine adsorption.
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- Semiconductors, 2012, v. 46, n. 1, p. 49, doi. 10.1134/S1063782612010083
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Differential capacitance of a p- p junction.
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- Semiconductors, 2012, v. 46, n. 1, p. 56, doi. 10.1134/S1063782612010174
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Experimental study of frequency multipliers based on a GaAs/AlAs semiconductor superlattices in the terahertz frequency range.
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- Semiconductors, 2012, v. 46, n. 1, p. 121, doi. 10.1134/S1063782612010150
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Nonlinear difference-frequency generation in the mid-infrared spectral range in waveguides with a modulated permittivity profile.
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- Semiconductors, 2012, v. 46, n. 1, p. 117, doi. 10.1134/S1063782612010149
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Magnetic susceptibility of (BiSb)Te (0 < x < 1) alloys in the temperature range 2 to 50 K.
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- Semiconductors, 2012, v. 46, n. 1, p. 22, doi. 10.1134/S1063782612010198
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Concentration dependence of the band gap of MnFeInS alloys on their composition.
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- Semiconductors, 2012, v. 46, n. 1, p. 41, doi. 10.1134/S106378261201006X
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Temperature-dependent conductivity and photoconductivity of p-CuI crystals.
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- Semiconductors, 2012, v. 46, n. 1, p. 35, doi. 10.1134/S1063782612010113
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Radiative recombination of hot carriers in narrow-gap semiconductors.
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- Semiconductors, 2012, v. 46, n. 1, p. 29, doi. 10.1134/S1063782612010162
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