Optical properties of nanostructured lead sulfide films with a D0 cubic structure.
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- Semiconductors, 2011, v. 45, n. 12, p. 1559, doi. 10.1134/S1063782611120116
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 12
Results: 15
1
2
Deformation of the surface of gallium arsenide during the deposition of gold.
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- Semiconductors, 2011, v. 45, n. 12, p. 1525, doi. 10.1134/S1063782611120049
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- Publication type:
- Article
3
Movement of the boundary of a p-n junction in GaAs:Si under gyrotronic irradiation.
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- Semiconductors, 2011, v. 45, n. 12, p. 1571, doi. 10.1134/S106378261112013X
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- Publication type:
- Article
4
Redistribution of components in the niobium-silicon system under high-temperature proton irradiation.
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- Semiconductors, 2011, v. 45, n. 12, p. 1617, doi. 10.1134/S1063782611120025
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- Publication type:
- Article
5
The influence of a doping profile on the characteristics of an ion-implanted GaAs field-effect transistor with a Schottky barrier.
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- Semiconductors, 2011, v. 45, n. 12, p. 1589, doi. 10.1134/S1063782611120128
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- Publication type:
- Article
6
Electrical properties of germanium-based insulator-semiconductor structures with an insulating layer of polynucleotides, and their monomer components on the surface.
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- Semiconductors, 2011, v. 45, n. 12, p. 1555, doi. 10.1134/S1063782611120165
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- Publication type:
- Article
7
Silicon ion implantation for growing structurally perfect silicon layers on sapphire.
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- Semiconductors, 2011, v. 45, n. 12, p. 1600, doi. 10.1134/S1063782611120153
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- Publication type:
- Article
8
Photopiezoelectric induction of resonant acoustic waves in semi-insulating gallium arsenide single crystals.
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- Semiconductors, 2011, v. 45, n. 12, p. 1550, doi. 10.1134/S1063782611120098
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- Publication type:
- Article
9
Investigation of the structure of an amorphous As-Se semiconductor system by relaxation methods.
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- Semiconductors, 2011, v. 45, n. 12, p. 1583, doi. 10.1134/S1063782611120074
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- Publication type:
- Article
10
Space-charge-limited currents in an SeAs chalcogenide glass-like semiconductor system containing EuF impurities.
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- Semiconductors, 2011, v. 45, n. 12, p. 1538, doi. 10.1134/S1063782611120050
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- Publication type:
- Article
11
Electron microscopy of GaAs Structures with InAs and as quantum dots.
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- Semiconductors, 2011, v. 45, n. 12, p. 1580, doi. 10.1134/S1063782611120104
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- Publication type:
- Article
12
Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures.
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- Semiconductors, 2011, v. 45, n. 12, p. 1575, doi. 10.1134/S1063782611120037
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- Publication type:
- Article
13
Morphology, elemental composition, and mechanical properties of polycrystalline CdTe layers.
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- Semiconductors, 2011, v. 45, n. 12, p. 1531, doi. 10.1134/S1063782611120086
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- Publication type:
- Article
14
Effect of pressure on the electronic spectrum of indium arsenide.
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- Semiconductors, 2011, v. 45, n. 12, p. 1543, doi. 10.1134/S1063782611120062
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- Publication type:
- Article
15
Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO:H 〈Er,O〉, by dc-magnetron deposition.
- Published in:
- Semiconductors, 2011, v. 45, n. 12, p. 1604, doi. 10.1134/S1063782611120141
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- Publication type:
- Article