Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 10

Results: 24

Formation of light-emitting nanostructures in layers of stoichiometric SiO irradiated with swift heavy ions.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1311, doi. 10.1134/S1063782611100113

By:

Kachurin, G.;
Cherkova, S.;
Skuratov, V.;
Marin, D.;
Kesler, V.;
Volodin, V.

Publication type:

Article

On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperatures.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1369, doi. 10.1134/S1063782611100083

By:

Ivanov, A.;
Sadokhin, A.;
Strokan, N.;
Lebedev, A.

Publication type:

Article

Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1321, doi. 10.1134/S1063782611100125

By:

Khabibullin, R.;
Vasil'evskii, I.;
Galiev, G.;
Klimov, E.;
Ponomarev, D.;
Lunin, R.;
Kulbachinskii, V.

Publication type:

Article

Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1364, doi. 10.1134/S1063782611100241

By:

Vinokurov, D.;
Kapitonov, V.;
Nikolaev, D.;
Pikhtin, N.;
Stankevich, A.;
Shamakhov, V.;
Bondarev, A.;
Vavilova, L.;
Tarasov, I.

Publication type:

Article

A DLTS study of 4 H-SiC-based p- n junctions fabricated by boron implantation.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1306, doi. 10.1134/S1063782611100101

By:

Ivanov, P.;
Potapov, A.;
Samsonova, T.;
Korol'kov, O.;
Sleptsuk, N.

Publication type:

Article

Optical spectra of six silicon phases.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1247, doi. 10.1134/S1063782611100174

By:

Sobolev, V.;
Shushkov, S.

Publication type:

Article

Interfacial luminescence in an InAs/InAsSbP isotype type II heterojunction at room temperature.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1334, doi. 10.1134/S1063782611100071

By:

Grigoryev, M.;
Ivanov, E.;
Moiseev, K.

Publication type:

Article

Simulation of optical properties of silicon solar cells textured with penetrating V-shaped grooves.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1357, doi. 10.1134/S1063782611100228

By:

Untila, G.;
Palov, A.;
Poroykov, A.;
Rakhimova, T.;
Mankelevich, Yu.;
Kost, T.;
Chebotareva, A.;
Dvorkin, V.

Publication type:

Article

Electrical characteristics of Au/ n-GaAs structures with thin and thick SiO dielectric layer.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1286, doi. 10.1134/S1063782611100034

By:

Altuntas, H.;
Altindal, S.;
Corekci, S.;
Ozturk, M.;
Ozcelik, S.

Publication type:

Article

The effect of Sn impurity on the optical and structural properties of thin silicon films.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1281, doi. 10.1134/S1063782611100253

By:

Voitovych, V.;
Neimash, V.;
Krasko, N.;
Kolosiuk, A.;
Povarchuk, V.;
Rudenko, R.;
Makara, V.;
Petrunya, R.;
Juhimchuk, V.;
Strelchuk, V.

Publication type:

Article

Band gap of CdTe and CdZnTe crystals.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1273, doi. 10.1134/S1063782611100137

By:

Kosyachenko, L.;
Sklyarchuk, V.;
Sklyarchuk, O.;
Maslyanchuk, O.

Publication type:

Article

Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1327, doi. 10.1134/S1063782611100150

By:

Semenov, A.;
Meltser, B.;
Solov'ev, V.;
Komissarova, T.;
Sitnikova, A.;
Kirylenko, D.;
Nadtochyi, A.;
Popova, T.;
Kop'ev, P.;
Ivanov, S.

Publication type:

Article

Effect of pressure and temperature on electronic structure of GaN in the zinc-blende structure.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1251, doi. 10.1134/S106378261110006X

By:

Degheidy, A.;
Elkenany, E.

Publication type:

Article

Main features of photostimulated ion transport in heterojunctions based on mixed ion-electron (hole) conductors and the model of a thin-film ion accelerator.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1291, doi. 10.1134/S1063782611100198

By:

Stetsun, A.;
Dvorina, L.

Publication type:

Article

Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasers.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1378, doi. 10.1134/S1063782611100162

By:

Slipchenko, S.;
Podoskin, A.;
Vinokurov, D.;
Stankevich, A.;
Leshko, A.;
Pikhtin, N.;
Zabrodskiy, V.;
Tarasov, I.

Publication type:

Article

Magnetoluminescence of CdTe/MnTe/CdMgTe heterostructures with ultrathin MnTe layers.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1301, doi. 10.1134/S1063782611100022

By:

Agekyan, V.;
Holz, P.;
Karczewski, G.;
Katz, V.;
Moskalenko, E.;
Serov, A.;
Filosofov, N.

Publication type:

Article

Photophysical and electrical properties of polyphenylquinolines containing carbazole or indolo[3,2-b]carbazole fragments as new optoelectronic materials.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1339, doi. 10.1134/S1063782611100204

By:

Svetlichnyi, V.;
Aleksandrova, E.;
Myagkova, L.;
Matyushina, N.;
Nekrasova, T.;
Smyslov, R.;
Tameev, A.;
Stepanenko, S.;
Vannikov, A.;
Kudryavtsev, V.

Publication type:

Article

Photoelectric properties of porous GaN/SiC heterostructures.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1317, doi. 10.1134/S1063782611100149

By:

Mynbaeva, M.;
Sitnikova, A.;
Mynbaev, K.

Publication type:

Article

Nucleation of CdTe islands during synthesis from the vapor phase on a cooled substrate.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1297, doi. 10.1134/S1063782611100046

By:

Belyaev, A.;
Rubets, V.;
Antipov, V.;
Eremina, E.

Publication type:

Article

Structure and magnetic properties of InSe single crystals intercalated by nickel.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1258, doi. 10.1134/S1063782611100186

By:

Stakhira, I.;
Tovstyuk, N.;
Fomenko, V.;
Tsmots, V.;
Shchupliak, A.

Publication type:

Article

Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1352, doi. 10.1134/S1063782611100216

By:

Tikhomirov, V.;
Maleev, N.;
Kuzmenkov, A.;
Solov'ev, Yu.;
Gladyshev, A.;
Kulagina, M.;
Zemlyakov, V.;
Dudinov, K.;
Yankevich, V.;
Bobyl, A.;
Ustinov, V.

Publication type:

Article

Tin impurity centers in glassy germanium chalcogenides.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1346, doi. 10.1134/S1063782611100058

By:

Bordovsky, G.;
Gladkikh, P.;
Kozhokar, M.;
Marchenko, A.;
Seregin, P.;
Terukov, E.

Publication type:

Article

I- V characteristics of high-voltage 4 H-SiC diodes with a 1.1-eV Schottky barrier.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1374, doi. 10.1134/S1063782611100095

By:

Ivanov, P.;
Grekhov, I.;
Kon'kov, O.;
Potapov, A.;
Samsonova, T.;
Semenov, T.

Publication type:

Article

Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly doped p-Ge due to the presence of light and heavy holes.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1264, doi. 10.1134/S106378261110023X

By:

Veinger, A.;
Zabrodskii, A.;
Tisnek, T.;
Goloshchapov, S.

Publication type:

Article