Thermoelectric properties of bismuth telluride nanocomposites with fullerene.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1194, doi. 10.1134/S1063782611090132
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 9
Results: 25
1
2
Distribution of CdSe nanoparticles synthesized in porous SiO matrix.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1189, doi. 10.1134/S1063782611090028
- By:
- Publication type:
- Article
3
Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1169, doi. 10.1134/S1063782611090259
- By:
- Publication type:
- Article
4
Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76-100% with their surface morphology and electrical properties.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1158, doi. 10.1134/S1063782611090247
- By:
- Publication type:
- Article
5
Investigation of energy levels of Er-impurity centers in Si by the method of ballistic electron emission spectroscopy.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1111, doi. 10.1134/S1063782611090077
- By:
- Publication type:
- Article
6
Effect of microwave irradiation on the photoluminescence of bound excitons in CdTe:Cl single crystals.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1133, doi. 10.1134/S1063782611090119
- By:
- Publication type:
- Article
7
Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treated n-GaAs surface.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1148, doi. 10.1134/S1063782611090065
- By:
- Publication type:
- Article
8
Conductivity compensation in p-6 H-SiC in irradiation with 8-MeV protons.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1145, doi. 10.1134/S1063782611090144
- By:
- Publication type:
- Article
9
Spectra of optical parameters in bulk and film amorphous alloys of the SeAs system containing samarium (Sm) impurities.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1177, doi. 10.1134/S106378261109003X
- By:
- Publication type:
- Article
10
A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1219, doi. 10.1134/S1063782611090193
- By:
- Publication type:
- Article
11
XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on n- and p-type substrates.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1183, doi. 10.1134/S1063782611090168
- By:
- Publication type:
- Article
12
Synthesis of the lead, arsenic, and bismuth chalcogenides with liquid encapsulation.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1242, doi. 10.1134/S106378261109020X
- By:
- Publication type:
- Article
13
Pyroelectric properties of AlN wide-gap semiconductor in the temperature range of 4.2-300 K.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1117, doi. 10.1134/S106378261109017X
- By:
- Publication type:
- Article
14
Electron states in single-layer graphene containing short-range defects: The potential separable in the momentum representation.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1199, doi. 10.1134/S1063782611090120
- By:
- Publication type:
- Article
15
The distribution of an electric field in p-n junctions of silicon edgeless detectors.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1234, doi. 10.1134/S1063782611090053
- By:
- Publication type:
- Article
16
Optical properties of quantum-confined heterostructures based on GaPNAs alloys.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1164, doi. 10.1134/S1063782611090041
- By:
- Publication type:
- Article
17
Defect structure of CdHgTe films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1124, doi. 10.1134/S1063782611090090
- By:
- Publication type:
- Article
18
Photoluminescence in silicon implanted with silicon ions at amorphizing doses.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1140, doi. 10.1134/S1063782611090181
- By:
- Publication type:
- Article
19
An accurate polynomial-based analytical charge control model for AlGaN/GaN HEMT.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1205, doi. 10.1134/S1063782611090107
- By:
- Publication type:
- Article
20
Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1227, doi. 10.1134/S1063782611090260
- By:
- Publication type:
- Article
21
Protonic metallization of the monoclinic phase in VO films.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1153, doi. 10.1134/S1063782611090089
- By:
- Publication type:
- Article
22
Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1231, doi. 10.1134/S1063782611090211
- By:
- Publication type:
- Article
23
Effect of iron impurities on the photoluminescence and photoconductivity of ZnSe crystals in the visible spectral region.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1129, doi. 10.1134/S1063782611090235
- By:
- Publication type:
- Article
24
Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1211, doi. 10.1134/S1063782611090156
- By:
- Publication type:
- Article
25
Specific features of photoluminescence properties of copper-doped cadmium selenide quantum dots.
- Published in:
- Semiconductors, 2011, v. 45, n. 9, p. 1173, doi. 10.1134/S1063782611090223
- By:
- Publication type:
- Article