Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 7
Results: 22
Photoluminescence of HgCdTe based heterostructures grown by molecular-beam epitaxy.
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- Semiconductors, 2011, v. 45, n. 7, p. 872, doi. 10.1134/S1063782611070153
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Deep electron levels in undoped polycrystalline CdTe annealed in liquid Cd.
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- Semiconductors, 2011, v. 45, n. 7, p. 865, doi. 10.1134/S1063782611070049
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Defects in the crystal structure of CdHgTe layers grown on the Si (310) substrates.
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- Semiconductors, 2011, v. 45, n. 7, p. 926, doi. 10.1134/S1063782611070232
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Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix.
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- Semiconductors, 2011, v. 45, n. 7, p. 907, doi. 10.1134/S1063782611070219
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On the thermal stability of graphone.
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- Semiconductors, 2011, v. 45, n. 7, p. 958, doi. 10.1134/S1063782611070177
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Features of a priori heavy doping of the n-TiNiSn intermetallic semiconductor.
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- Semiconductors, 2011, v. 45, n. 7, p. 850, doi. 10.1134/S1063782611070190
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Photoluminescence of CdTe grown in conditions considerably deviating from thermodynamic equilibrium.
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- Semiconductors, 2011, v. 45, n. 7, p. 880, doi. 10.1134/S1063782611070025
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Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide.
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- Semiconductors, 2011, v. 45, n. 7, p. 944, doi. 10.1134/S1063782611070098
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Terbium luminescence in alumina xerogel fabricated in porous anodic alumina matrix under various excitation conditions.
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- Semiconductors, 2011, v. 45, n. 7, p. 950, doi. 10.1134/S1063782611070086
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Effect of localization in quantum wells and quantum wires on heavy-light hole mixing and acceptor binding energy.
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- Semiconductors, 2011, v. 45, n. 7, p. 917, doi. 10.1134/S1063782611070207
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Magnetic properties of the FeInS ternary-compound crystals.
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- Semiconductors, 2011, v. 45, n. 7, p. 861, doi. 10.1134/S1063782611070050
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Effect of AlGaAs-(AlGa)O pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots.
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- Semiconductors, 2011, v. 45, n. 7, p. 962, doi. 10.1134/S1063782611070116
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The effect of morphology and surface composition on radiation resistance of heterogeneous material CdS-PbS.
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- Semiconductors, 2011, v. 45, n. 7, p. 888, doi. 10.1134/S106378261107013X
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Electrical and photoelectric properties of nanostructures obtained by electroless etching of silicon.
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- Semiconductors, 2011, v. 45, n. 7, p. 954, doi. 10.1134/S1063782611070037
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Quaternary (FeInS)(MnInS) alloys and photosensitive structures on their basis.
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- Semiconductors, 2011, v. 45, n. 7, p. 912, doi. 10.1134/S1063782611070062
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Coherent phase equilibria in the Zn-Cd-Te system and liquid-phase epitaxy of elastically strained ZnCdTe alloy layers.
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- Semiconductors, 2011, v. 45, n. 7, p. 837, doi. 10.1134/S1063782611070141
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Thermoelectric properties of BiTeI with addition of BiI, CuI, and overstoichiometric Bi.
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- Semiconductors, 2011, v. 45, n. 7, p. 845, doi. 10.1134/S1063782611070128
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Longitudinal conductivity of layered charge-ordered crystals in a high quantizing magnetic field.
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- Semiconductors, 2011, v. 45, n. 7, p. 900, doi. 10.1134/S1063782611070104
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Effect of the nonlinear saturation of the gain on the peak modulation frequency in lasers based on self-assembled quantum dots.
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- Semiconductors, 2011, v. 45, n. 7, p. 966, doi. 10.1134/S1063782611070244
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Effect of photovoltage on current flow in metal-semiconductor schottky-barrier contacts.
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- Semiconductors, 2011, v. 45, n. 7, p. 935, doi. 10.1134/S1063782611070220
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Transient spectroscopy of Ryvkin's α centers.
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- Semiconductors, 2011, v. 45, n. 7, p. 857, doi. 10.1134/S1063782611070165
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Dependence of conductivity of an illuminated nonideal heterojunction on external bias.
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- Semiconductors, 2011, v. 45, n. 7, p. 894, doi. 10.1134/S1063782611070074
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