Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 6

Results: 25

Fabrication of ordered GaAs nanowhiskers using electron-beam lithography.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 822, doi. 10.1134/S1063782611060236

By:

Soshnikov, I.;
Afanas'ev, D.;
Cirlin, G.;
Petrov, V.;
Tanklevskaya, E.;
Samsonenko, Yu.;
Bouravlev, A.;
Khrebtov, A.;
Ustinov, V.

Publication type:

Article

Impurity centers of tin in glassy arsenic chalcogenides.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 783, doi. 10.1134/S1063782611060054

By:

Bordovsky, G.;
Dashina, A.;
Marchenko, A.;
Seregin, P.;
Terukov, E.

Publication type:

Article

Vacancy model of micropipe annihilation in epitaxial silicon carbide layers.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 727, doi. 10.1134/S106378261106008X

By:

Davydov, S.;
Lebedev, A.

Publication type:

Article

Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO/ZrO system containing Si nanoclusters.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 731, doi. 10.1134/S1063782611060108

By:

Ershov, A.;
Tetelbaum, D.;
Chugrov, I.;
Mashin, A.;
Mikhaylov, A.;
Nezhdanov, A.;
Karabanova, I.

Publication type:

Article

Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 753, doi. 10.1134/S1063782611060121

By:

Kladko, V.;
Kuchuk, A.;
Safriuk, N.;
Machulin, V.;
Belyaev, A.;
Konakova, R.;
Yavich, B.;
Ber, B.;
Kazantsev, D.

Publication type:

Article

Edge photoluminescence of single-crystal silicon with a p-n junction: Structures produced by high-efficiency solar cell technology.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 805, doi. 10.1134/S1063782611060091

By:

Emel'yanov, A.

Publication type:

Article

Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 811, doi. 10.1134/S1063782611060078

By:

Brunkov, P.;
Gutkin, A.;
Rudinsky, M.;
Ronghin, O.;
Sitnikova, A.;
Shakhmin, A.;
Ber, B.;
Kazantsev, D.;
Egorov, A.;
Zemlyakov, V.;
Konnikov, S.

Publication type:

Article

Model of boron diffusion from gas phase in silicon carbide.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 705, doi. 10.1134/S1063782611060029

By:

Aleksandrov, O.;
Mokhov, E.

Publication type:

Article

Features of obtaining diluted magnetic semiconductors in the system of narrow-gap GaInAsSb alloys.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 771, doi. 10.1134/S1063782611060145

By:

Moiseev, K.;
Lesnikov, V.;
Podolski, V.;
Kudriavtsev, Yu.;
Kudriavtseva, O.;
Escobosa, A.;
Sanchez-Resendiz, V.

Publication type:

Article

Fabrication of improved-quality seed crystals for growth of bulk silicon carbide.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 828, doi. 10.1134/S1063782611060157

By:

Mynbaeva, M.;
Abramov, P.;
Lebedev, A.;
Tregubova, A.;
Litvin, D.;
Vasiliev, A.;
Chemekova, T.;
Makarov, Yu.

Publication type:

Article

High-efficiency (η = 39.6%, AM 1.5D) cascade of photoconverters in solar splitting systems.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 792, doi. 10.1134/S106378261106011X

By:

Khvostikov, V.;
Vlasov, A.;
Sorokina, S.;
Potapovich, N.;
Timoshina, N.;
Shvarts, M.;
Andreev, V.

Publication type:

Article

Drift velocity of electrons in quantum wells of selectively doped InGaAs/AlInAs and InGaAs/AlGaAs heterostructures in high electric fields.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 761, doi. 10.1134/S1063782611060212

By:

Požela, J.;
Požela, K.;
Raguotis, R.;
Jucienė, V.

Publication type:

Article

Physical properties of SnS thin films fabricated by hot wall deposition.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 749, doi. 10.1134/S1063782611060030

By:

Bashkirov, S.;
Gremenok, V.;
Ivanov, V.

Publication type:

Article

Anomalous long-term degradation of photoluminescence in porous silicon layers.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 788, doi. 10.1134/S1063782611060248

By:

Timokhov, D.;
Timokhov, F.

Publication type:

Article

Features of dynamic acoustically induced modification of photovoltaic parameters of silicon solar cells.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 798, doi. 10.1134/S1063782611060170

By:

Olikh, O.

Publication type:

Article

Excitonic spectrum of the ZnO/ZnMgO quantum wells.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 766, doi. 10.1134/S1063782611060042

By:

Bobrov, M.;
Toropov, A.;
Ivanov, S.;
El-Shaer, A.;
Bakin, A.;
Waag, A.

Publication type:

Article

Electronic structure and spectral characteristics of Zn-substituted clathrate silicides.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 713, doi. 10.1134/S1063782611060066

By:

Borshch, N.;
Pereslavtseva, N.;
Kurganskii, S.

Publication type:

Article

Resonance propagation of electrons through three-barrier structures in a two-frequency electric field.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 743, doi. 10.1134/S1063782611060194

By:

Pashkovskii, A.

Publication type:

Article

Matrices of 960-nm vertical-cavity surface-emitting lasers.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 818, doi. 10.1134/S1063782611060133

By:

Maleev, N.;
Kuzmenkov, A.;
Shulenkov, A.;
Blokhin, S.;
Kulagina, M.;
Zadiranov, Yu.;
Tikhomirov, V.;
Gladyshev, A.;
Nadtochiy, A.;
Nikitina, E.;
Lott, J.;
Svede-Shvets, V.;
Ledentsov, N.;
Ustinov, V.

Publication type:

Article

Circular polarization of the photoluminescence from a system of two-dimensional A centers in a magnetic field.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 776, doi. 10.1134/S1063782611060200

By:

Petrov, P.;
Ivánov, Yu.;
Averkiev, N.

Publication type:

Article

Energy of impurity resonance states in lead telluride with different contents of thallium impurity.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 724, doi. 10.1134/S1063782611060169

By:

Nemov, S.;
Ravich, Yu.;
Korchagin, V.

Publication type:

Article

Specific features of formation of radiation defects in the silicon layer in 'silicon-on-insulator' structures.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 738, doi. 10.1134/S1063782611060224

By:

Shcherbachev, K.;
Bublik, V.;
Mordkovich, V.;
Pazhin, D.

Publication type:

Article

A Comment to the paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov, and V.G. Zadorozhniy 'a statistical method of deep-level transient spectroscopy in semiconductors'.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 832, doi. 10.1134/S106378261106025X

By:

Yarykin, N.

Publication type:

Article

Erratum to: 'Electronic States on Silicon Surface after Deposition and Annealing of SiO Films'.

Published in:

2011

By:

Vlasenko, N.;
Oleksenko, P.;
Denisova, Z.;
Sopinskii, N.;
Veligura, L.;
Gule, E.;
Litvin, O.;
Mukhlyo, M.

Publication type:

Correction Notice

Yurii Aronovich Goldberg (1939-2011).

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 835, doi. 10.1134/S1063782611060182

By:

Konstantinov, O.;
Samsonov, A.

Publication type:

Article