Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 5
Results: 28
Theoretical investigations of the g factors and the hyperfine structure constants of the Cr and Mn centrs in silicon.
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- Semiconductors, 2011, v. 45, n. 5, p. 577, doi. 10.1134/S1063782611050290
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Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures.
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- Semiconductors, 2011, v. 45, n. 5, p. 657, doi. 10.1134/S1063782611050162
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Charge spectroscopy of SiO layers with embedded silicon nanocrystals modified by irradiation with high-energy ions.
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- Semiconductors, 2011, v. 45, n. 5, p. 582, doi. 10.1134/S1063782611050034
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Absolute negative conductivity of graphene with impurities in magnetic field.
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- Semiconductors, 2011, v. 45, n. 5, p. 628, doi. 10.1134/S1063782611050058
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Analysis of threshold conditions for generation of a closed mode in a Fabry-Perot semiconductor laser.
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- Semiconductors, 2011, v. 45, n. 5, p. 663, doi. 10.1134/S1063782611050265
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Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions.
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- Semiconductors, 2011, v. 45, n. 5, p. 679, doi. 10.1134/S1063782611050216
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The influence of substrate temperature on the structural and optical properties of ZnS thin films.
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- Semiconductors, 2011, v. 45, n. 5, p. 699, doi. 10.1134/S1063782611050046
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Fabrication of por-Si/SnO nanocomposite layers for gas microsensors and nanosensors.
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- Semiconductors, 2011, v. 45, n. 5, p. 693, doi. 10.1134/S1063782611050071
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Effect of a high-energy proton-irradiation dose on the electron mobility in n-Si crystals.
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- Semiconductors, 2011, v. 45, n. 5, p. 572, doi. 10.1134/S106378261105023X
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Insulator band gap in graphane nanoribbons.
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- Semiconductors, 2011, v. 45, n. 5, p. 633, doi. 10.1134/S1063782611050228
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Electronic states on silicon surface after deposition and annealing of SiO films.
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- Semiconductors, 2011, v. 45, n. 5, p. 587, doi. 10.1134/S1063782611050289
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Simultaneous TE and TE mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction.
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- Semiconductors, 2011, v. 45, n. 5, p. 641, doi. 10.1134/S1063782611050022
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Ion implantation of platinum from pulsed laser plasma for fabrication of a hydrogen detector based on an n-6 H-SiC crystal.
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- Semiconductors, 2011, v. 45, n. 5, p. 685, doi. 10.1134/S1063782611050095
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Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT.
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- Semiconductors, 2011, v. 45, n. 5, p. 650, doi. 10.1134/S1063782611050198
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Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation.
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- Semiconductors, 2011, v. 45, n. 5, p. 623, doi. 10.1134/S1063782611050186
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Enhancement of photoluminescence and raman scattering in one-dimensional photonic crystals based on porous silicon.
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- Semiconductors, 2011, v. 45, n. 5, p. 614, doi. 10.1134/S1063782611050113
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Electrical and gas-sensitive properties of nanostructured SnO:ZrO semiconductor films.
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- Semiconductors, 2011, v. 45, n. 5, p. 603, doi. 10.1134/S1063782611050253
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On charge transfer in the adsorbed molecules-graphene monolayer-SiC substrate system.
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- Semiconductors, 2011, v. 45, n. 5, p. 618, doi. 10.1134/S1063782611050083
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Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures.
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- Semiconductors, 2011, v. 45, n. 5, p. 673, doi. 10.1134/S1063782611050277
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High-voltage (3.3 kV) 4 H-SiC JBS diodes.
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- Semiconductors, 2011, v. 45, n. 5, p. 668, doi. 10.1134/S1063782611050125
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Current response of a TlBr detector to Cs γ-ray radiation.
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- Semiconductors, 2011, v. 45, n. 5, p. 636, doi. 10.1134/S1063782611050101
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A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT).
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- Semiconductors, 2011, v. 45, n. 5, p. 646, doi. 10.1134/S1063782611050137
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Photosensitive structures based on CuInTe single crystals: Development and properties.
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- Semiconductors, 2011, v. 45, n. 5, p. 607, doi. 10.1134/S106378261105006X
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Photoconductivity of pyrolytic CdS films alloyed with Cs.
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- Semiconductors, 2011, v. 45, n. 5, p. 567, doi. 10.1134/S1063782611050204
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The role of nonequilibrium charge in generation of the thermopower in extrinsic semiconductors.
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- Semiconductors, 2011, v. 45, n. 5, p. 593, doi. 10.1134/S1063782611050174
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The effect of a magnetic field on electrical properties of surface-barrier Bi-Si-Al structures.
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- Semiconductors, 2011, v. 45, n. 5, p. 599, doi. 10.1134/S1063782611050241
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Study of dielectric processes in (AsSe)Bi amorphous films.
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- Semiconductors, 2011, v. 45, n. 5, p. 611, doi. 10.1134/S1063782611050150
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Vadim Valentinovich Emtsev (On his 70th birthday).
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- Semiconductors, 2011, v. 45, n. 5, p. 703, doi. 10.1134/S1063782611050149
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- Article