Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 4
Results: 23
Laser diodes with several emitting regions (λ = 800-1100 nm) on the basis of epitaxially integrated heterostructures.
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- Semiconductors, 2011, v. 45, n. 4, p. 519, doi. 10.1134/S1063782611040154
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A model of formation of fixed charge in thermal silicon dioxide.
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- Semiconductors, 2011, v. 45, n. 4, p. 467, doi. 10.1134/S1063782611040026
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Passivation of infrared photodiodes with alcoholic sulfide solution.
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- Semiconductors, 2011, v. 45, n. 4, p. 526, doi. 10.1134/S1063782611040142
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Modification of the structural lattice parameters and electron spectra of n-GaAs films on sapphire on irradiation with reactor neutrons.
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- Semiconductors, 2011, v. 45, n. 4, p. 454, doi. 10.1134/S1063782611040063
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Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS.
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- Semiconductors, 2011, v. 45, n. 4, p. 423, doi. 10.1134/S1063782611040129
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Absorption and spectra of optical parameters in amorphous solid solutions of the Se-S system.
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- Semiconductors, 2011, v. 45, n. 4, p. 493, doi. 10.1134/S1063782611040087
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Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces.
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- Semiconductors, 2011, v. 45, n. 4, p. 431, doi. 10.1134/S1063782611040191
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Impact of the sample thickness and γ-irradiation dose on the occurrence of radiation-induced optical effects in chalcogenide vitreous semiconductors of the Ge-Sb-S system.
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- Semiconductors, 2011, v. 45, n. 4, p. 499, doi. 10.1134/S1063782611040105
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- Article
Effect of silicon on relaxation of the crystal lattice in MOCVD-hydride AlGaAs:Si/GaAs(100) heterostructures.
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- Semiconductors, 2011, v. 45, n. 4, p. 481, doi. 10.1134/S106378261104021X
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Minority-charge-carrier mobility at low injection level in semiconductors.
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- Semiconductors, 2011, v. 45, n. 4, p. 436, doi. 10.1134/S1063782611040178
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A temperature-stable semiconductor laser based on coupled waveguides.
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- Semiconductors, 2011, v. 45, n. 4, p. 550, doi. 10.1134/S1063782611040208
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Specific features of photoelectric and optical properties of amorphous hydrogenated silicon films produced by plasmochemical deposition from monosilane-hydrogen mixture.
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- Semiconductors, 2011, v. 45, n. 4, p. 510, doi. 10.1134/S1063782611040117
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Percolation and excitonic luminescence in SiO/ZnO two-phase structures with a high density of quantum dots randomly distributed over a spherical surface.
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- Semiconductors, 2011, v. 45, n. 4, p. 474, doi. 10.1134/S106378261104004X
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Surface-barrier structures on single crystals of CdMgMnTe quaternary solid solutions: Creation and properties.
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- Semiconductors, 2011, v. 45, n. 4, p. 461, doi. 10.1134/S106378261104018X
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Vacuum hydride epitaxy of silicon: kinetics of monosilane pyrolysis on the growth surface.
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- Semiconductors, 2011, v. 45, n. 4, p. 557, doi. 10.1134/S1063782611040166
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Conductivity photoquenching effect in polymer-ferrocene composites.
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- Semiconductors, 2011, v. 45, n. 4, p. 503, doi. 10.1134/S1063782611040130
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Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes.
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- Semiconductors, 2011, v. 45, n. 4, p. 543, doi. 10.1134/S1063782611040245
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Galvanomagnetic phenomena in a longitudinal autosoliton in p-InSb in transverse and longitudinal magnetic fields.
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- Semiconductors, 2011, v. 45, n. 4, p. 449, doi. 10.1134/S1063782611040099
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Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability.
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- Semiconductors, 2011, v. 45, n. 4, p. 530, doi. 10.1134/S1063782611040233
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GaAs-AlGaAs heterostructure thyristors with completely optical transfer of emitter current.
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- Semiconductors, 2011, v. 45, n. 4, p. 515, doi. 10.1134/S1063782611040075
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Potential distribution in voltage terminating structures with floating p-n junction rings of silicon radiation detectors.
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- Semiconductors, 2011, v. 45, n. 4, p. 536, doi. 10.1134/S1063782611040221
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Transmittance spectra of the CuGaSe ternary compound near the fundamental absorption edge.
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- Semiconductors, 2011, v. 45, n. 4, p. 445, doi. 10.1134/S1063782611040038
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States of antimony and tin atoms in lead chalcogenides.
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- Semiconductors, 2011, v. 45, n. 4, p. 427, doi. 10.1134/S1063782611040051
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