Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 4

Results: 23

Impact of the sample thickness and γ-irradiation dose on the occurrence of radiation-induced optical effects in chalcogenide vitreous semiconductors of the Ge-Sb-S system.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 499, doi. 10.1134/S1063782611040105

By:

Kavetskyy, T.

Publication type:

Article

Vacuum hydride epitaxy of silicon: kinetics of monosilane pyrolysis on the growth surface.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 557, doi. 10.1134/S1063782611040166

By:

Orlov, L.;
Ivin, S.

Publication type:

Article

Absorption and spectra of optical parameters in amorphous solid solutions of the Se-S system.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 493, doi. 10.1134/S1063782611040087

By:

Djalilov, N.;
Damirov, G.

Publication type:

Article

Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 431, doi. 10.1134/S1063782611040191

By:

Samsonenko, Yu.;
Cirlin, G.;
Khrebtov, A.;
Bouravleuv, A.;
Polyakov, N.;
Ulin, V.;
Dubrovskii, V.;
Werner, P.

Publication type:

Article

Effect of silicon on relaxation of the crystal lattice in MOCVD-hydride AlGaAs:Si/GaAs(100) heterostructures.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 481, doi. 10.1134/S106378261104021X

By:

Seredin, P.;
Glotov, A.;
Ternovaya, V.;
Domashevskaya, E.;
Arsentyev, I.;
Vinokurov, D.;
Stankevich, A.;
Tarasov, I.

Publication type:

Article

Laser diodes with several emitting regions (λ = 800-1100 nm) on the basis of epitaxially integrated heterostructures.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 519, doi. 10.1134/S1063782611040154

By:

Marmalyuk, A.;
Davydova, E.;
Zverkov, M.;
Konyaev, V.;
Krichevsky, V.;
Ladugin, M.;
Lebedeva, E.;
Petrov, S.;
Sapozhnikov, S.;
Simakov, V.;
Uspenskiy, M.;
Yarotskaya, I.;
Pikhtin, N.;
Tarasov, I.

Publication type:

Article

A model of formation of fixed charge in thermal silicon dioxide.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 467, doi. 10.1134/S1063782611040026

By:

Aleksandrov, O.;
Dus', A.

Publication type:

Article

Passivation of infrared photodiodes with alcoholic sulfide solution.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 526, doi. 10.1134/S1063782611040142

By:

Lebedev, M.;
Sherstnev, V.;
Kunitsyna, E.;
Andreev, I.;
Yakovlev, Yu.

Publication type:

Article

Modification of the structural lattice parameters and electron spectra of n-GaAs films on sapphire on irradiation with reactor neutrons.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 454, doi. 10.1134/S1063782611040063

By:

Brudnyi, V.;
Kosobutsky, A.;
Kolin, N.;
Korulin, A.

Publication type:

Article

Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 423, doi. 10.1134/S1063782611040129

By:

Kozyukhin, S.;
Golovchak, R.;
Kovalskiy, A.;
Shpotyuk, O.;
Jain, H.

Publication type:

Article

Conductivity photoquenching effect in polymer-ferrocene composites.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 503, doi. 10.1134/S1063782611040130

By:

Kurbanov, M.;
Suleymanov, G.;
Safarov, N.;
Gochuyeva, A.;
Orujov, I.;
Mamedova, Z.

Publication type:

Article

Surface-barrier structures on single crystals of CdMgMnTe quaternary solid solutions: Creation and properties.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 461, doi. 10.1134/S106378261104018X

By:

Rud', V.;
Rud', Yu.;
Terukov, E.

Publication type:

Article

Minority-charge-carrier mobility at low injection level in semiconductors.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 436, doi. 10.1134/S1063782611040178

By:

Pomortseva, L.

Publication type:

Article

A temperature-stable semiconductor laser based on coupled waveguides.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 550, doi. 10.1134/S1063782611040208

By:

Savelyev, A.;
Novikov, I.;
Chunareva, A.;
Gordeev, N.;
Maximov, M.;
Payusov, A.;
Arakcheeva, E.;
Shchukin, V.;
Ledentsov, N.

Publication type:

Article

Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 543, doi. 10.1134/S1063782611040245

By:

Zotova, N.;
Karandashev, S.;
Matveev, B.;
Remennyy, M.;
Rybal'chenko, A.;
Stus', N.

Publication type:

Article

Galvanomagnetic phenomena in a longitudinal autosoliton in p-InSb in transverse and longitudinal magnetic fields.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 449, doi. 10.1134/S1063782611040099

By:

Kamilov, I.;
Stepurenko, A.;
Gummetov, A.

Publication type:

Article

Specific features of photoelectric and optical properties of amorphous hydrogenated silicon films produced by plasmochemical deposition from monosilane-hydrogen mixture.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 510, doi. 10.1134/S1063782611040117

By:

Kazanskii, A.;
Terukov, E.;
Forsh, P.;
Khenkin, M.

Publication type:

Article

Percolation and excitonic luminescence in SiO/ZnO two-phase structures with a high density of quantum dots randomly distributed over a spherical surface.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 474, doi. 10.1134/S106378261104004X

By:

Bondar, N.

Publication type:

Article

Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 530, doi. 10.1134/S1063782611040233

By:

Zhukov, A.;
Kryzhanovskaya, N.;
Maximov, M.;
Egorov, A.;
Pavlov, M.;
Zubov, F.;
Asryan, L.

Publication type:

Article

GaAs-AlGaAs heterostructure thyristors with completely optical transfer of emitter current.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 515, doi. 10.1134/S1063782611040075

By:

Danil'chenko, V.;
Korol'kov, V.;
Ponomarev, S.;
Soldatenkov, F.

Publication type:

Article

Potential distribution in voltage terminating structures with floating p-n junction rings of silicon radiation detectors.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 536, doi. 10.1134/S1063782611040221

By:

Verbitskaya, E.;
Eremin, V.;
Safonova, N.;
Eremin, I.;
Tuboltsev, Yu.;
Golubkov, S.;
Konkov, K.

Publication type:

Article

Transmittance spectra of the CuGaSe ternary compound near the fundamental absorption edge.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 445, doi. 10.1134/S1063782611040038

By:

Bodnar, I.

Publication type:

Article

States of antimony and tin atoms in lead chalcogenides.

Published in:

Semiconductors, 2011, v. 45, n. 4, p. 427, doi. 10.1134/S1063782611040051

By:

Bordovsky, G.;
Nemov, S.;
Marchenko, A.;
Zaiceva, A.;
Kozhokar, M.;
Seregin, P.

Publication type:

Article