Piecewise parabolic negative magnetoresistance of two-dimensional electron gas with triangular antidot lattice.
- Published in:
- Semiconductors, 2011, v. 45, n. 2, p. 203, doi. 10.1134/S1063782611020059
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2011 AND VI 45 AND IP 2
Results: 25
1
2
Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers.
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- Semiconductors, 2011, v. 45, n. 2, p. 198, doi. 10.1134/S1063782611020199
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- Publication type:
- Article
3
Photoelectric and luminescent properties of dysprosium-doped silver chloride.
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- Semiconductors, 2011, v. 45, n. 2, p. 162, doi. 10.1134/S1063782611020151
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- Publication type:
- Article
4
Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature.
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- Semiconductors, 2011, v. 45, n. 2, p. 179, doi. 10.1134/S1063782611020023
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- Article
5
Modulation waves of charge carriers in n- and p-type semiconductor layers.
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- Semiconductors, 2011, v. 45, n. 2, p. 192, doi. 10.1134/S106378261102014X
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- Publication type:
- Article
6
Effect of annealing on the electrical properties of thallium-doped PbTe single crystals.
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- Semiconductors, 2011, v. 45, n. 2, p. 145, doi. 10.1134/S1063782611020035
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- Publication type:
- Article
7
Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells.
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- Semiconductors, 2011, v. 45, n. 2, p. 208, doi. 10.1134/S1063782611020229
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- Publication type:
- Article
8
Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands.
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- Semiconductors, 2011, v. 45, n. 2, p. 225, doi. 10.1134/S1063782611020126
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- Publication type:
- Article
9
Optical generation of free charge carriers in thin films of tin oxide.
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- Semiconductors, 2011, v. 45, n. 2, p. 236, doi. 10.1134/S1063782611020266
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- Publication type:
- Article
10
Effect of p- n junction overheating on degradation of silicon high-power pulsed IMPATT diodes.
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- Semiconductors, 2011, v. 45, n. 2, p. 253, doi. 10.1134/S1063782611020047
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- Publication type:
- Article
11
The ratio of the hole and electron exchange integrals in a CdMnSe/ZnSe diluted magnetic structure with quantum dots.
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- Semiconductors, 2011, v. 45, n. 2, p. 215, doi. 10.1134/S1063782611020175
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- Publication type:
- Article
12
Quasi-equilibrium hopping drift and field-stimulated diffusion in ultrathin layers of organic materials.
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- Semiconductors, 2011, v. 45, n. 2, p. 230, doi. 10.1134/S1063782611020114
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- Publication type:
- Article
13
Crystallization of hydrogenated amorphous silicon films by exposure to femtosecond pulsed laser radiation.
- Published in:
- Semiconductors, 2011, v. 45, n. 2, p. 265, doi. 10.1134/S1063782611020254
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- Article
14
Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range.
- Published in:
- Semiconductors, 2011, v. 45, n. 2, p. 248, doi. 10.1134/S1063782611020138
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- Publication type:
- Article
15
Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them.
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- Semiconductors, 2011, v. 45, n. 2, p. 271, doi. 10.1134/S1063782611020230
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- Publication type:
- Article
16
Photovoltaic properties of interfaces of organic films of substituted perylene with TiO and SnO surfaces.
- Published in:
- Semiconductors, 2011, v. 45, n. 2, p. 169, doi. 10.1134/S1063782611020102
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- Publication type:
- Article
17
Spectral width of laser generation in quantum dot lasers: An analytical approach.
- Published in:
- Semiconductors, 2011, v. 45, n. 2, p. 241, doi. 10.1134/S1063782611020187
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- Publication type:
- Article
18
On the magnetic phase transition in strongly chained TlFeS and TlFeSe semiconductors.
- Published in:
- Semiconductors, 2011, v. 45, n. 2, p. 158, doi. 10.1134/S1063782611020242
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- Publication type:
- Article
19
Manifestation of light and heavy electrons in the galvanomagnetic characteristics of Te-doped n-BiSb single crystals.
- Published in:
- Semiconductors, 2011, v. 45, n. 2, p. 148, doi. 10.1134/S1063782611020217
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- Publication type:
- Article
20
Determination of the density of surface states at the semiconductor-insulator interface in a metal-insulator-semiconductor structure.
- Published in:
- Semiconductors, 2011, v. 45, n. 2, p. 174, doi. 10.1134/S1063782611020084
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- Publication type:
- Article
21
Semiconductor surface potential relaxation in the MIS structure in the presence of convective currents in insulator and through its boundaries.
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- Semiconductors, 2011, v. 45, n. 2, p. 188, doi. 10.1134/S1063782611020072
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- Publication type:
- Article
22
Frequency and temperature dependences of capacitance-voltage characteristics of InGaN/GaN light-emitting structures with multiple quantum wells.
- Published in:
- Semiconductors, 2011, v. 45, n. 2, p. 221, doi. 10.1134/S1063782611020205
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- Publication type:
- Article
23
Photoresponse asymmetry of CdZnTe crystals.
- Published in:
- Semiconductors, 2011, v. 45, n. 2, p. 153, doi. 10.1134/S1063782611020060
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- Publication type:
- Article
24
Electron probe microanalysis of heterostructures with nanolayers.
- Published in:
- Semiconductors, 2011, v. 45, n. 2, p. 260, doi. 10.1134/S1063782611020163
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- Publication type:
- Article
25
Energy distribution of recoil atoms and formation of radiation defects in silicon carbide films under proton irradiation.
- Published in:
- Semiconductors, 2011, v. 45, n. 2, p. 141, doi. 10.1134/S1063782611020096
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- Publication type:
- Article