Study of the p-Ge- n-GaAs heterojunction under hydrostatic pressure.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1185, doi. 10.1134/S1063782610090149
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 9
Results: 25
1
2
Electrical characteristics of the CdTe- n-CdHgTe structure fabricated in a single molecular-beam epitaxy process.
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- Semiconductors, 2010, v. 44, n. 9, p. 1180, doi. 10.1134/S1063782610090137
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- Publication type:
- Article
3
Gas-fired thermophotovoltaic generator based on metallic emitters and GaSb cells.
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- Semiconductors, 2010, v. 44, n. 9, p. 1244, doi. 10.1134/S1063782610090241
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- Publication type:
- Article
4
Effect of an AC electric field on the conductance of single-wall semiconductor-type carbon nanotubes.
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- Semiconductors, 2010, v. 44, n. 9, p. 1211, doi. 10.1134/S1063782610090186
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- Publication type:
- Article
5
Differential method of analysis of luminescence spectra of semiconductors.
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- Semiconductors, 2010, v. 44, n. 9, p. 1134, doi. 10.1134/S1063782610090046
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- Publication type:
- Article
6
The dependence of the lasing threshold in ZnO nanorods on their length.
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- Semiconductors, 2010, v. 44, n. 9, p. 1217, doi. 10.1134/S1063782610090198
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- Publication type:
- Article
7
Mode structure of laser emission from ZnO Nanorods with one metal mirror.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1235, doi. 10.1134/S1063782610090228
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- Publication type:
- Article
8
Electrical properties of thin-film structures formed by pulsed laser deposition of Au, Ag, Cu, Pd, Pt, W, Zr metals on n-6 H-SiC crystal.
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- Semiconductors, 2010, v. 44, n. 9, p. 1192, doi. 10.1134/S1063782610090162
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- Publication type:
- Article
9
Features of reflection spectra of single crystals of BiTe-SbTe solid solutions in the region of plasma effects.
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- Semiconductors, 2010, v. 44, n. 9, p. 1129, doi. 10.1134/S1063782610090034
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- Publication type:
- Article
10
Films of degenerate intrinsic oxides of InSe and InSe semiconductor crystals.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1176, doi. 10.1134/S1063782610090125
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- Publication type:
- Article
11
Indirect interband transitions in graphite with a wide quasigap.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1170, doi. 10.1134/S1063782610090113
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- Publication type:
- Article
12
Study of the layer-substrate interface in nc-Si-SiO- p-Si structures with silicon quantum dots by the method of temperature dependences of photovoltage.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1187, doi. 10.1134/S1063782610090150
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- Publication type:
- Article
13
Influence of defects formed by fast reactor neutrons on exciton luminescence spectra of cadmium sulfide single crystals.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1153, doi. 10.1134/S1063782610090083
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- Publication type:
- Article
14
EBIC study of nonradiative recombination in silicon LEDs with near-band-edge luminescence.
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- Semiconductors, 2010, v. 44, n. 9, p. 1241, doi. 10.1134/S106378261009023X
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- Publication type:
- Article
15
X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1199, doi. 10.1134/S1063782610090174
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- Publication type:
- Article
16
Charge neutrality level and electronic properties of GaSe under pressure.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1158, doi. 10.1134/S1063782610090095
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- Publication type:
- Article
17
Subterahertz self-oscillations of depletion of electron populations in the conduction band of GaAs in the presence of pumping and intrinsic stimulated radiation.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1121, doi. 10.1134/S1063782610090022
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- Publication type:
- Article
18
An (AlGaAs/GaAs/AlGaAs) resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wells.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1222, doi. 10.1134/S1063782610090204
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- Publication type:
- Article
19
Negative magnetoresistance in silicon with manganese-atom complexes [Mn].
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1145, doi. 10.1134/S106378261009006X
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- Publication type:
- Article
20
Dislocation electrical conductivity of plastically deformed natural diamonds.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1140, doi. 10.1134/S1063782610090058
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- Publication type:
- Article
21
Analysis of the phase diagrams of the CdS-CdSe-CdTe system.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1117, doi. 10.1134/S1063782610090010
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- Publication type:
- Article
22
The nature of edge luminescence of CdTe:Mg diffusion layers.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1167, doi. 10.1134/S1063782610090101
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- Publication type:
- Article
23
Effect of oxygen plasma on the properties of tantalum oxide films.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1227, doi. 10.1134/S1063782610090216
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- Publication type:
- Article
24
The variance law and scattering mechanism of charge carriers in Zn-doped p-InGaSb.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1149, doi. 10.1134/S1063782610090071
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- Publication type:
- Article
25
Conductance simulation in an a-Si:H thin-film transistor with Schottky barriers.
- Published in:
- Semiconductors, 2010, v. 44, n. 9, p. 1249, doi. 10.1134/S1063782610090253
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- Publication type:
- Article