Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 8

Results: 28

Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator on p-type silicon.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1030, doi. 10.1134/S1063782610080130

By:

Ivanov, A. M.;
Kotina, I. M.;
Lasakov, M. S.;
Strokan, N. B.;
Tuhkonen, L. M.

Publication type:

Article

Raman scattering in organic semiconductors based on erbium biphthalocyanine molecules and chlorine-containing europium-lutetium triphthalocyanine molecules.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1044, doi. 10.1134/S1063782610080166

By:

Belogorokhov, I. A.;
Mamichev, D. A.;
Dronov, M. A.;
Pushkarev, V. E.;
Tomilova, L. G.;
Khokhlov, D. R.

Publication type:

Article

Raman studies of silicon nanocrystals embedded in silicon suboxide layers.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1040, doi. 10.1134/S1063782610080154

By:

Maslova, N. E.;
Antonovsky, A. A.;
Zhigunov, D. M.;
Timoshenko, V. Yu.;
Glebov, V. N.;
Seminogov, V. N.

Publication type:

Article

Electron structure and spectral characteristics of Cd-substituted Ge-based clathrates.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 987, doi. 10.1134/S106378261008004X

By:

Borshch, N. A.;
Pereslavtseva, N. S.;
Kurganskii, S. I.

Publication type:

Article

InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1050, doi. 10.1134/S1063782610080178

By:

Talalaev, V. G.;
Senichev, A. V.;
Novikov, B. V.;
Tomm, J. W.;
Elsaesser, T.;
Zakharov, N. D.;
Werner, P.;
Gösele, U.;
Samsonenko, Yu. B.;
Cirlin, G. E.

Publication type:

Article

Photoluminescence of nitro-substituted europium (III) phthalocyanines.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1070, doi. 10.1134/S1063782610080208

By:

Ziminov, A. V.;
Polevaya, Yu. A.;
Jourre, T. A.;
Ramsh, S. M.;
Mezdrogina, M. M.;
Poletaev, N. K.

Publication type:

Article

Effect of spacer layers on current-voltage characteristics of resonant-tunneling diode.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1034, doi. 10.1134/S1063782610080142

By:

Remnev, M. A.;
Kateev, I. Yu.;
Elesin, V. F.

Publication type:

Article

Study of spin centers in nanocrystalline titanium dioxide with a high degree of photocatalytic activity.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1059, doi. 10.1134/S106378261008018X

By:

Konstantinova, E. A.;
Gayvoronskiy, V. Ya.;
Timoshenko, V. Yu.;
Kashkarov, P. K.

Publication type:

Article

Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1064, doi. 10.1134/S1063782610080191

By:

Terent'ev, Ya. V.;
Mukhin, M. S.;
Solov'ev, V. A.;
Semenov, A. N.;
Meltser, B. Ya.;
Usikova, A. A.;
Ivanov, S. V.

Publication type:

Article

Relaxation of crystal lattice parameters and structural ordering in InGaAs epitaxial alloys.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1106, doi. 10.1134/S1063782610080270

By:

Seredin, P. V.;
Glotov, A. V.;
Domashevskaya, E. P.;
Arsentyev, I. N.;
Vinokurov, D. A.;
Stankevich, A. L.;
Tarasov, I. S.

Publication type:

Article

Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1101, doi. 10.1134/S1063782610080269

By:

Grekhov, I. V.;
Kostina, L. S.;
Argunova, T. S.;
Belyakova, E. I.;
Rozkov, A. V.;
Shmidt, N. M.;
Yusupova, Sh. A.;
Je, J. H.

Publication type:

Article

A study of raman and rutherford backscattering spectra of amorphous carbon films modified with platinum.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1074, doi. 10.1134/S106378261008021X

By:

Remenyuk, A. D.;
Zvonareva, T. K.;
Serenkov, I. T.;
Sakharov, V. I.;
Perova, T. S.;
Wasyluk, J.

Publication type:

Article

Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1090, doi. 10.1134/S1063782610080245

By:

Avakyants, L. P.;
Bokov, P. Yu.;
Chervyakov, A. V.;
Chuyas, A. V.;
Yunovich, A. E.;
Vasileva, E. D.;
Bauman, D. A.;
Uelin, V. V.;
Yavich, B. S.

Publication type:

Article

Efficient photoelectric converters of ultraviolet radiation based on ZnS and CdS with low-resistivity surface layers.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1080, doi. 10.1134/S1063782610080221

By:

Bobrenko, Yu. N.;
Pavelets, S. Yu.;
Pavelets, A. M.;
Kiselyuk, M. P.;
Yaroshenko, N. V.

Publication type:

Article

Properties of ZnO whiskers under CO-laser irradiation.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1113, doi. 10.1134/S1063782610080282

By:

Shkumbatyuk, P. S.

Publication type:

Article

Study of minority carrier diffusion lengths in photoactive layers of multijunction solar cells.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1084, doi. 10.1134/S1063782610080233

By:

Mintairov, S. A.;
Andreev, V. M.;
Emelyanov, V. M.;
Kalyuzhnyy, N. A.;
Timoshina, N. K.;
Shvarts, M. Z.;
Lantratov, V. M.

Publication type:

Article

Interaction of copper impurity with radiation defects in silicon doped with boron.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 983, doi. 10.1134/S1063782610080038

By:

Yarykin, N. A.;
Weber, J.

Publication type:

Article

Development and photoelectric properties of In/ p-AgAsS surface-barrier structures.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1025, doi. 10.1134/S1063782610080129

By:

Rud', V. Yu.;
Rud', Yu. V.;
Terukov, E. I.

Publication type:

Article

Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1004, doi. 10.1134/S1063782610080075

By:

Anisimova, N. I.;
Bordovsky, V. A.;
Grabko, G. I.;
Castro, R. A.

Publication type:

Article

Two-electron tin centers arising in glassy chalcogenides of arsenic due to nuclear reactions.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 978, doi. 10.1134/S1063782610080026

By:

Bordovsky, G. A.;
Gladkikh, P. V.;
Kozhokar, M. Yu.;
Marchenko, A. V.;
Seregin, P. P.;
Terukov, E. I.

Publication type:

Article

Capacitance-voltage characteristics of the electrolyte- n-InN surface and electron states at the interface.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1020, doi. 10.1134/S1063782610080117

By:

Rudinsky, M. E.;
Gutkin, A. A.;
Brunkov, P. N.

Publication type:

Article

Electron scattering by acceptor centers in p-AgTe at low temperatures.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1008, doi. 10.1134/S1063782610080087

By:

Aliev, F. F.;
Jafarov, M. B.;
Askerova, G. Z.;
Gojaev, E. M.

Publication type:

Article

InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1096, doi. 10.1134/S1063782610080257

By:

Jung-Hui Tsai;
Wen-Shiung Lour;
Der-Feng Guo;
Wen-Chau Liu;
Yi-Zhen Wu;
Ying-Feng Dai

Publication type:

Article

A study of the process of decomposition of supersaturated GaAs:Fe solid solution by scanning probe microscopy.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 975, doi. 10.1134/S1063782610080014

By:

Khludkov, S. S.;
Prudaev, I. A.;
Novikov, V. V.;
Tolbanov, O. P.;
Ivonin, I. V.

Publication type:

Article

Optical properties of thin GaSe/ n-Si(111) films.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1012, doi. 10.1134/S1063782610080099

By:

Kisselyuk, M. P.;
Vlasenko, O. I.;
Gentsar, P. O.;
Vuychik, M. V.;
Zayats, M. S.;
Kruglenko, I. V.;
Litvin, O. S.;
Kryskov, Ts. A.

Publication type:

Article

Direct tunneling of electrons in Al- n-Si-SiO- n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1016, doi. 10.1134/S1063782610080105

By:

Goldman, E. I.;
Gulyaev, Yu. V.;
Zhdan, A. G.;
Chucheva, G. V.

Publication type:

Article

Study of main HgMnZnTe band parameters.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 993, doi. 10.1134/S1063782610080051

By:

Ostapov, S. E.;
Frasunyak, V. M.;
Zhikharevich, V. V.

Publication type:

Article

Statistical method of deep-level transient spectroscopy in semiconductors.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 997, doi. 10.1134/S1063782610080063

By:

Tatokhin, E. A.;
Kadantsev, A. V.;
Bormontov, A. E.;
Zadorozhniy, V. G.

Publication type:

Article