Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 7

Results: 23

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 919, doi. 10.1134/S1063782610070158

By:

Egorov, A. Yu.;
Gladyshev, A. G.;
Nikitina, E. V.;
Denisov, D. V.;
Polyakov, N. K.;
Pirogov, E. V.;
Gorbazevich, A. A.

Publication type:

Article

Influence of the method of synthesis on properties of cadmium telluride films synthesized in highly nonequilibrium conditions.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 946, doi. 10.1134/S1063782610070195

By:

Belyaev, A. P.;
Rubets, V. P.;
Antipov, V. V.;
Eremina, E. O.

Publication type:

Article

Structural and optical properties of InAlN/GaN distributed Bragg reflectors.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 949, doi. 10.1134/S1063782610070201

By:

Usov, S. O.;
Zavarin, E. E.;
Tsatsul’nikov, A. F.;
Lundin, V. V.;
Sakharov, A. V.;
Nikolaev, A. E.;
Sinitsyn, M. A.;
Kryzhanovskaya, N. V.;
Troshkov, S. I.;
Ledentsov, N. N.

Publication type:

Article

Ultrahigh-power picosecond current switching by a silicon sharpener based on successive breakdown of structures.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 931, doi. 10.1134/S1063782610070171

By:

Lyubutin, S. K.;
Rukin, S. N;
Slovikovsky, B. G.;
Tsyranov, S. N.

Publication type:

Article

Photoinduced current transient spectroscopy of high-resistivity layered GaSe crystals.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 854, doi. 10.1134/S1063782610070031

By:

Odrinsky, A. P.

Publication type:

Article

Electron transport in an InAlAs/InGaAs/InAlAs quantum well with a δ-Si doped barrier in high electric fields.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 898, doi. 10.1134/S1063782610070122

By:

Vasil’evskii, I. S.;
Galiev, G. B.;
Matveev, Yu. A.;
Klimov, E. A.;
Požela, J.;
Požela, K.;
Sužiedėlis, A.;
Paškevič, Č.;
Jucienė, V.

Publication type:

Article

Fabrication of one-dimensional photonic crystals by photoelectrochemical etching of silicon.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 954, doi. 10.1134/S1063782610070213

By:

Zharova, Yu. A.;
Fedulova, G. V.;
Gushchina, E. V.;
Ankudinov, A. V.;
Astrova, E. V.;
Ermakov, V. A.;
Perova, T. S.

Publication type:

Article

The problem of uniformity of properties of 4 H-SiC CVD films.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 969, doi. 10.1134/S1063782610070237

By:

Ivanov, A. M.;
Strokan, N. B.;
Scherbov, N. A.;
Lebedev, A. A.

Publication type:

Article

Varistor effect in polymer-semiconductor composites.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 904, doi. 10.1134/S1063782610070134

By:

Kerimov, M. K.;
Kurbanov, M. A.;
Sultanahmedova, I. S.;
Faradzhzade, I. A.;
Tatardar, F. N.;
Aliyev, H. S.;
Yahyaev, F. F.;
Yusifova, U. V.

Publication type:

Article

Dependence of photoluminescence spectra of epitaxial PbEuTe (0 ≤ x ≤ 0.1) alloy layers on conditions of growth.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 861, doi. 10.1134/S1063782610070055

By:

Pashkeev, D. A.;
Selivanov, Yu. G.;
Felder, F.;
Zasavitskiy, I. I.

Publication type:

Article

Physics with isotopically controlled semiconductors.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 841, doi. 10.1134/S106378261007002X

By:

Haller, E. E.

Publication type:

Article

Growth of (InSb)(Sn) films on GaAs substrates by liquid-phase epitaxy.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 938, doi. 10.1134/S1063782610070183

By:

Saidov, A. S.;
Saidov, M. S.;
Usmonov, Sh. N.;
Asatova, U. P.

Publication type:

Article

Evolution of exciton states near the percolation threshold in two-phase systems with II–VI semiconductor quantum dots.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 884, doi. 10.1134/S1063782610070109

By:

Bondar, N. V.;
Brodyn, M. S.

Publication type:

Article

Photoprocesses in a semiconducting carbon photocapacitor with a double electrical layer.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 835, doi. 10.1134/S1063782610070018

By:

Ivashchyshyn, F. O.;
Grygorchak, I. I.;
Bakhmatyuk, B. P.

Publication type:

Article

Features of conduction mechanisms in Si/oligo-β-naphthol/metal heterostructures.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 875, doi. 10.1134/S1063782610070080

By:

Hasannli, Sh. M.;
Mursakulov, N. N.;
Samedova, U. F.;
Abdulzade, N. N.;
Mamedov, B. A.;
Guseynov, R. K.

Publication type:

Article

Calculation of the charge-carrier mobility in diamond at low temperatures.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 867, doi. 10.1134/S1063782610070067

By:

Baturin, A. S.;
Gorelkin, V. N.;
Soloviev, V. R.;
Chernousov, I. V.

Publication type:

Article

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 924, doi. 10.1134/S106378261007016X

By:

Sizov, V. S.;
Tsatsulnikov, A. F.;
Sakharov, A. V.;
Lundin, W. V.;
Zavarin, E. E.;
Cherkashin, N. A.;
Hÿtch, M. J.;
Nikolaev, A. E.;
Mintairov, A. M.;
Yan He;
Merz, J. L.

Publication type:

Article

MBE growth and characterization of 5-μm quantum-cascade lasers.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 962, doi. 10.1134/S1063782610070225

By:

Mamutin, V. V.;
Ustinov, V. M.;
Boetthcher, J.;
Kuenzel, H.

Publication type:

Article

Effect of rectification of current induced by an electromagnetic wave in graphene: A numerical simulation.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 879, doi. 10.1134/S1063782610070092

By:

Zavyalov, D. V.;
Kryuchkov, S. V.;
Tyul’kina, T. A.

Publication type:

Article

Optical properties of quaternary GaNAsP semiconductor alloys.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 857, doi. 10.1134/S1063782610070043

By:

Egorov, A. Yu.;
Kryzhanovskaya, N. V.;
Pirogov, E. V.;
Pavlov, M. M.

Publication type:

Article

Numerical simulation of time-dependent geminate recombination in polymers.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 912, doi. 10.1134/S1063782610070146

By:

Korolev, N. A.;
Nikitenko, V. R.;
Tyutnev, A. P.

Publication type:

Article

Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 893, doi. 10.1134/S1063782610070110

By:

Rumyantsev, O. I.;
Brunkov, P. N.;
Pirogov, E. V.;
Egorov, A. Yu.

Publication type:

Article

Bistable low temperature (77 K) impurity breakdown in p-type 4 H-SiC.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 872, doi. 10.1134/S1063782610070079

By:

Ivanov, P. A.;
Potapov, A. S.;
Samsonova, T. P.

Publication type:

Article