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Results: 23

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 919, doi. 10.1134/S1063782610070158
By:
- Egorov, A. Yu.;
- Gladyshev, A. G.;
- Nikitina, E. V.;
- Denisov, D. V.;
- Polyakov, N. K.;
- Pirogov, E. V.;
- Gorbazevich, A. A.
Publication type:
Article
Varistor effect in polymer-semiconductor composites.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 904, doi. 10.1134/S1063782610070134
By:
- Kerimov, M. K.;
- Kurbanov, M. A.;
- Sultanahmedova, I. S.;
- Faradzhzade, I. A.;
- Tatardar, F. N.;
- Aliyev, H. S.;
- Yahyaev, F. F.;
- Yusifova, U. V.
Publication type:
Article
Photoinduced current transient spectroscopy of high-resistivity layered GaSe crystals.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 854, doi. 10.1134/S1063782610070031
By:
- Odrinsky, A. P.
Publication type:
Article
Dependence of photoluminescence spectra of epitaxial PbEuTe (0 ≤ x ≤ 0.1) alloy layers on conditions of growth.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 861, doi. 10.1134/S1063782610070055
By:
- Pashkeev, D. A.;
- Selivanov, Yu. G.;
- Felder, F.;
- Zasavitskiy, I. I.
Publication type:
Article
Ultrahigh-power picosecond current switching by a silicon sharpener based on successive breakdown of structures.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 931, doi. 10.1134/S1063782610070171
By:
- Lyubutin, S. K.;
- Rukin, S. N;
- Slovikovsky, B. G.;
- Tsyranov, S. N.
Publication type:
Article
The problem of uniformity of properties of 4 H-SiC CVD films.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 969, doi. 10.1134/S1063782610070237
By:
- Ivanov, A. M.;
- Strokan, N. B.;
- Scherbov, N. A.;
- Lebedev, A. A.
Publication type:
Article
Influence of the method of synthesis on properties of cadmium telluride films synthesized in highly nonequilibrium conditions.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 946, doi. 10.1134/S1063782610070195
By:
- Belyaev, A. P.;
- Rubets, V. P.;
- Antipov, V. V.;
- Eremina, E. O.
Publication type:
Article
Physics with isotopically controlled semiconductors.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 841, doi. 10.1134/S106378261007002X
By:
- Haller, E. E.
Publication type:
Article
Growth of (InSb)(Sn) films on GaAs substrates by liquid-phase epitaxy.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 938, doi. 10.1134/S1063782610070183
By:
- Saidov, A. S.;
- Saidov, M. S.;
- Usmonov, Sh. N.;
- Asatova, U. P.
Publication type:
Article
Features of conduction mechanisms in Si/oligo-β-naphthol/metal heterostructures.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 875, doi. 10.1134/S1063782610070080
By:
- Hasannli, Sh. M.;
- Mursakulov, N. N.;
- Samedova, U. F.;
- Abdulzade, N. N.;
- Mamedov, B. A.;
- Guseynov, R. K.
Publication type:
Article
Electron transport in an InAlAs/InGaAs/InAlAs quantum well with a δ-Si doped barrier in high electric fields.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 898, doi. 10.1134/S1063782610070122
By:
- Vasil’evskii, I. S.;
- Galiev, G. B.;
- Matveev, Yu. A.;
- Klimov, E. A.;
- Požela, J.;
- Požela, K.;
- Sužiedėlis, A.;
- Paškevič, Č.;
- Jucienė, V.
Publication type:
Article
Fabrication of one-dimensional photonic crystals by photoelectrochemical etching of silicon.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 954, doi. 10.1134/S1063782610070213
By:
- Zharova, Yu. A.;
- Fedulova, G. V.;
- Gushchina, E. V.;
- Ankudinov, A. V.;
- Astrova, E. V.;
- Ermakov, V. A.;
- Perova, T. S.
Publication type:
Article
Photoprocesses in a semiconducting carbon photocapacitor with a double electrical layer.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 835, doi. 10.1134/S1063782610070018
By:
- Ivashchyshyn, F. O.;
- Grygorchak, I. I.;
- Bakhmatyuk, B. P.
Publication type:
Article
Calculation of the charge-carrier mobility in diamond at low temperatures.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 867, doi. 10.1134/S1063782610070067
By:
- Baturin, A. S.;
- Gorelkin, V. N.;
- Soloviev, V. R.;
- Chernousov, I. V.
Publication type:
Article
Evolution of exciton states near the percolation threshold in two-phase systems with II–VI semiconductor quantum dots.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 884, doi. 10.1134/S1063782610070109
By:
- Bondar, N. V.;
- Brodyn, M. S.
Publication type:
Article
Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 893, doi. 10.1134/S1063782610070110
By:
- Rumyantsev, O. I.;
- Brunkov, P. N.;
- Pirogov, E. V.;
- Egorov, A. Yu.
Publication type:
Article
Structural and optical properties of InAlN/GaN distributed Bragg reflectors.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 949, doi. 10.1134/S1063782610070201
By:
- Usov, S. O.;
- Zavarin, E. E.;
- Tsatsul’nikov, A. F.;
- Lundin, V. V.;
- Sakharov, A. V.;
- Nikolaev, A. E.;
- Sinitsyn, M. A.;
- Kryzhanovskaya, N. V.;
- Troshkov, S. I.;
- Ledentsov, N. N.
Publication type:
Article
Bistable low temperature (77 K) impurity breakdown in p-type 4 H-SiC.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 872, doi. 10.1134/S1063782610070079
By:
- Ivanov, P. A.;
- Potapov, A. S.;
- Samsonova, T. P.
Publication type:
Article
The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 924, doi. 10.1134/S106378261007016X
By:
- Sizov, V. S.;
- Tsatsulnikov, A. F.;
- Sakharov, A. V.;
- Lundin, W. V.;
- Zavarin, E. E.;
- Cherkashin, N. A.;
- Hÿtch, M. J.;
- Nikolaev, A. E.;
- Mintairov, A. M.;
- Yan He;
- Merz, J. L.
Publication type:
Article
MBE growth and characterization of 5-μm quantum-cascade lasers.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 962, doi. 10.1134/S1063782610070225
By:
- Mamutin, V. V.;
- Ustinov, V. M.;
- Boetthcher, J.;
- Kuenzel, H.
Publication type:
Article
Optical properties of quaternary GaNAsP semiconductor alloys.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 857, doi. 10.1134/S1063782610070043
By:
- Egorov, A. Yu.;
- Kryzhanovskaya, N. V.;
- Pirogov, E. V.;
- Pavlov, M. M.
Publication type:
Article
Effect of rectification of current induced by an electromagnetic wave in graphene: A numerical simulation.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 879, doi. 10.1134/S1063782610070092
By:
- Zavyalov, D. V.;
- Kryuchkov, S. V.;
- Tyul’kina, T. A.
Publication type:
Article
Numerical simulation of time-dependent geminate recombination in polymers.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 912, doi. 10.1134/S1063782610070146
By:
- Korolev, N. A.;
- Nikitenko, V. R.;
- Tyutnev, A. P.
Publication type:
Article