Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 6


Results: 24
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    Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers.

    Published in:
    Semiconductors, 2010, v. 44, n. 6, p. 805, doi. 10.1134/S1063782610060199
    By:
    • Vinokurov, D. A.;
    • Ladugin, M. A.;
    • Lyutetskii, A. V.;
    • Marmalyuk, A. A.;
    • Petrunov, A. N.;
    • Pikhtin, N. A.;
    • Slipchenko, S. O.;
    • Sokolova, Z. N.;
    • Stankevich, A. L.;
    • Fetisova, N. V.;
    • Shashkin, I. S.;
    • Averkiev, N. S.;
    • Tarasov, I. S.
    Publication type:
    Article
    22

    Phonon drag of electrons in Ag<sub>2</sub>S.

    Published in:
    Semiconductors, 2010, v. 44, n. 6, p. 734, doi. 10.1134/S1063782610060084
    By:
    • Aliev, S. A.;
    • Aliev, F. F.;
    • Gasanov, Z. S.;
    • Abdullayev, S. M.;
    • Selim-zade, R. I.
    Publication type:
    Article
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