Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 5

Results: 24

Effect of the periphery of metal-semiconductor contacts with Schottky barriers on their static current-voltage characteristic.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 590, doi. 10.1134/S1063782610050088

By:

Torkhov, N. A.

Publication type:

Article

Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 616, doi. 10.1134/S106378261005012X

By:

Gavrilenko, V. I.;
Ikonnikov, A. V.;
Krishtopenko, S. S.;
Lastovkin, A. A.;
Marem'yanin, K. V.;
Sadofyev, Yu. G.;
Spirin, K. E.

Publication type:

Article

Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 610, doi. 10.1134/S1063782610050118

By:

Dementyev, P. A.;
Dunaevskii, M. S.;
Samsonenko, Yu. B.;
Cirlin, G. E.;
Titkov, A. N.

Publication type:

Article

Some features of photocurrent generation in single- and multibarrier photodiode structures.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 647, doi. 10.1134/S1063782610050179

By:

Karimov, A. V.;
Yodgorova, D. M.

Publication type:

Article

Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 564, doi. 10.1134/S1063782610050039

By:

Mayorov, V. A.;
Yafaysov, A. M.;
Bogevolnov, V. B.;
Radanstev, V. F.

Publication type:

Article

Comparative study of changes in electrical properties of silicon and silicon carbide upon proton irradiation.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 678, doi. 10.1134/S1063782610050234

By:

Emtsev, V. V.;
Ivanov, A. M.;
Kozlovskii, V. V.;
Lebedev, A. A.;
Oganesyan, G. A.;
Strokan, N. B.

Publication type:

Article

Excess leakage currents in high-voltage 4 H-SiC Schottky diodes.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 653, doi. 10.1134/S1063782610050180

By:

Ivanov, P. A.;
Grekhov, I. V.;
Potapov, A. S.;
Samsonova, T. P.;
Il'inskaya, N. D.;
Kon'kov, O. I.;
Serebrennikova, O. Yu.

Publication type:

Article

The role of underbarrier transitions in processes of annihilation of excess charge carriers in II–VI semiconductors.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 575, doi. 10.1134/S1063782610050052

By:

Novikov, G. F.;
Rabenok, E. V.;
Gapanovich, M. V.

Publication type:

Article

Optical properties of iron-passivated nanoporous silicon.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 642, doi. 10.1134/S1063782610050167

By:

Shevchenko, O. Yu.;
Goryachev, D. N.;
Belyakov, L. V.;
Sreseli, O. M.

Publication type:

Article

Study and simulation of magnetic susceptibility of Si and Si0.95Ge0.05 whiskers.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 623, doi. 10.1134/S1063782610050131

By:

Tsmots, V. M.;
Litovchenko, P. G.;
Pavlovska, N. T.;
Pavlovskyy, Yu. V.;
Ostrovskyy, I. P.

Publication type:

Article

Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of polycrystalline silicon.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 602, doi. 10.1134/S106378261005009X

By:

Olimov, L. O.

Publication type:

Article

Luminescent and structural properties of ZnO-Ag films.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 685, doi. 10.1134/S1063782610050246

By:

Khomchenko, V. S.;
Kushnirenko, V. I.;
Papusha, V. P.;
Savin, A. K.;
Lytvyn, O. S.

Publication type:

Article

Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 672, doi. 10.1134/S1063782610050222

By:

Semenov, A. N.;
Terent'ev, Ya. V.;
Meltser, B. Ya.;
Solov'ev, V. A.;
Popova, T. V.;
Nashchekin, A. V.;
Andreev, I. A.;
Kunitsyna, E. V.;
Usikova, A. A.;
Yakovlev, Yu. P.;
Ivanov, S. V.

Publication type:

Article

Structural features of the photogeneration mechanism of free charge carriers in element-containing polydisalicylidene azomethine series.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 634, doi. 10.1134/S1063782610050155

By:

Aleksandrova, E. L.;
Ivanov, A. G.;
Geller, N. M.;
Shamanin, V. V.

Publication type:

Article

Specific features of the luminescence and conductivity of zinc selenide on exposure to X-ray and optical excitation.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 568, doi. 10.1134/S1063782610050040

By:

Degoda, V. Ya.;
Sofienko, A. O.

Publication type:

Article

Optical and dielectric characteristics of the rare-earth metal oxide Lu2O3.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 558, doi. 10.1134/S1063782610050027

By:

Ordin, S. V.;
Shelykh, A. I.

Publication type:

Article

Optical properties of (CuInSe2)1 − x(2MnSe) x alloys.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 581, doi. 10.1134/S1063782610050064

By:

Bodnar, I. V.

Publication type:

Article

Effect of different chemical treatments of surface on the height of Al- p-SiGe and Au- n-SiGe barriers.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 605, doi. 10.1134/S1063782610050106

By:

Atabaev, I. G.;
Matchanov, N. A.;
Hajiev, M. U.;
Pak, V.;
Saliev, T. M.

Publication type:

Article

Specific features of conductivity of γ-irradiated TlGaTe2 crystals with nanochain structure.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 585, doi. 10.1134/S1063782610050076

By:

Sardarli, R. M.;
Samedov, O. A.;
Abdullayev, A. P.;
Huseynov, E. K.;
Salmanov, F. T.;
Safarova, G. R.

Publication type:

Article

Temperature delocalization of charge carriers in semiconductor lasers.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 661, doi. 10.1134/S1063782610050209

By:

Slipchenko, S. O.;
Shashkin, I. S.;
Vavilova, L. S.;
Vinokurov, D. A.;
Lyutetskiy, A. V.;
Pikhtin, N. A.;
Podoskin, A. A.;
Stankevich, A. L.;
Fetisova, N. V.;
Tarasov, I. S.

Publication type:

Article

Features of subthreshold defect formation in CdS and CdS:Cu single crystals subjected to irradiation with X-ray photons.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 667, doi. 10.1134/S1063782610050210

By:

Mironchuk, G. L.;
Davidyuk, H. Ye.;
Bozhko, V. V.;
Kažukauskas, V.

Publication type:

Article

Dependence of the stimulated luminescence threshold in ZnO nanocrystals on their geometric shape.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 628, doi. 10.1134/S1063782610050143

By:

Gruzintsev, A. N.;
Redkin, A. N.;
Barthou, C.

Publication type:

Article

Initial stages of the development of semiconductor electronics in the Soviet union (60 years from the Invention of the Transistor).

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 551, doi. 10.1134/S1063782610050015

By:

Stafeev, V. I.

Publication type:

Article

Raising the quantum efficiency of AlGaInN flip-chip LEDs by Reactive ion etching of the outer side of SiC substrates.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 657, doi. 10.1134/S1063782610050192

By:

Smirnova, I. P.;
Markov, L. K.;
Arakcheeva, E. M.;
Pavluchenko, A. S.;
Zakgeim, D. A.;
Kulagina, M. M.

Publication type:

Article

Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 5

Effect of the periphery of metal-semiconductor contacts with Schottky barriers on their static current-voltage characteristic.

Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells.

Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer.

Some features of photocurrent generation in single- and multibarrier photodiode structures.

Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition.

Comparative study of changes in electrical properties of silicon and silicon carbide upon proton irradiation.

Excess leakage currents in high-voltage 4 H-SiC Schottky diodes.

The role of underbarrier transitions in processes of annihilation of excess charge carriers in II–VI semiconductors.

Optical properties of iron-passivated nanoporous silicon.

Study and simulation of magnetic susceptibility of Si and Si<sub>0.95</sub>Ge<sub>0.05</sub> whiskers.

Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of polycrystalline silicon.

Luminescent and structural properties of ZnO-Ag films.

Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors.

Structural features of the photogeneration mechanism of free charge carriers in element-containing polydisalicylidene azomethine series.

Specific features of the luminescence and conductivity of zinc selenide on exposure to X-ray and optical excitation.

Optical and dielectric characteristics of the rare-earth metal oxide Lu<sub>2</sub>O<sub>3</sub>.

Optical properties of (CuInSe<sub>2</sub>)<sub>1 − x</sub>(2MnSe)<sub> x</sub> alloys.

Effect of different chemical treatments of surface on the height of Al- p-SiGe and Au- n-SiGe barriers.

Specific features of conductivity of γ-irradiated TlGaTe<sub>2</sub> crystals with nanochain structure.

Temperature delocalization of charge carriers in semiconductor lasers.

Features of subthreshold defect formation in CdS and CdS:Cu single crystals subjected to irradiation with X-ray photons.

Dependence of the stimulated luminescence threshold in ZnO nanocrystals on their geometric shape.

Initial stages of the development of semiconductor electronics in the Soviet union (60 years from the Invention of the Transistor).

Raising the quantum efficiency of AlGaInN flip-chip LEDs by Reactive ion etching of the outer side of SiC substrates.