Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 4

Results: 23

Current flow mechanism in ohmic contact to n-4 H-SiC.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 463, doi. 10.1134/S1063782610040093

By:

Blank, T. V.;
Goldberg, Yu. A.;
Posse, E. A.;
Soldatenkov, F. Yu.

Publication type:

Article

Stimulated radiation at a wavelength of 2.5 μm at room temperature from optically excited Cd xHg1 − xTe-based structures.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 457, doi. 10.1134/S1063782610040081

By:

Andronov, A. A.;
Nozdrin, Yu. N.;
Okomel'kov, A. V.;
Varavin, V. S.;
Mikhailov, N. N.;
Sidorov, G. Yu.

Publication type:

Article

The sharply nonlinear current-voltage characteristic of a structure with a quantum well built in the depletion region of a Schottky Barrier.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 478, doi. 10.1134/S1063782610040123

By:

Korol, A. M.;
Nosenko, I. V.

Publication type:

Article

Optical absorption and diffusion of iron in ZnSe single crystals.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 444, doi. 10.1134/S1063782610040068

By:

Vaksman, Yu. F.;
Nitsuk, Yu. A.;
Yatsun, V. V.;
Nasibov, A. S.;
Shapkin, P. V.

Publication type:

Article

The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 426, doi. 10.1134/S1063782610040032

By:

Mezdrogina, M. M.;
Danilevskii, E. Yu.;
Kuz'min, R. V.;
Poletaev, N. K.;
Trapeznikova, I. N.;
Chukichev, M. V.;
Bordovskii, G. A.;
Marchenko, A. V.;
Eremenko, M. V.

Publication type:

Article

Influence of the energy parameters of the deposited laser-induced flow of platinum atoms on characteristics of a Pt/ n-6 H-SiC thin-film structure.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 537, doi. 10.1134/S1063782610040226

By:

Fominskii, V. Yu.;
Romanov, R. I.;
Gnedovets, A. G.;
Zuev, V. V.;
Demin, M. V.

Publication type:

Article

Exciton binding energy in semiconductor quantum dots.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 488, doi. 10.1134/S1063782610040147

By:

Pokutnii, S. I.

Publication type:

Article

Radiation damage of contact structures with diffusion barriers exposed to irradiation with 60Coγ-ray photons.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 448, doi. 10.1134/S106378261004007X

By:

Belyaev, A. E.;
Boltovets, N. S.;
Konakova, R. V.;
Milenin, V. V.;
Sveshnikov, Yu. N.;
Sheremet, V. N.

Publication type:

Article

Ordered arrays of Si nanocrystals in SiO2: Structural, optical, and electronic properties.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 482, doi. 10.1134/S1063782610040135

By:

Antonova, I. V.;
Skuratov, V. A.;
Jedrzejewski, J.;
Balberg, I.

Publication type:

Article

Features of self-activated luminescence spectra of CdS:O in the context of band anticrossing theory.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 438, doi. 10.1134/S1063782610040056

By:

Morozova, N. K.;
Danilevich, N. D.

Publication type:

Article

X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO2 and Si sources.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 531, doi. 10.1134/S1063782610040214

By:

Shamin, S. N.;
Galakhov, V. R.;
Aksenova, V. I.;
Karpov, A. N.;
Shvartz, N. L.;
Yanovitskaya, Z. Sh.;
Volodin, V. A.;
Antonova, I. V.;
Ezhevskaya, T. B.;
Jedrzejewski, J.;
Savir, E.;
Balberg, I.

Publication type:

Article

Light-emitting Si nanostructures formed in SiO2 on irradiation with swift heavy ions.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 525, doi. 10.1134/S1063782610040202

By:

Kachurin, G. A.;
Cherkova, S. G.;
Skuratov, V. A.;
Marin, D. V.;
Cherkov, A. G.

Publication type:

Article

Numerical simulation of hydrogenation of GaAs at the cooling stage.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 413, doi. 10.1134/S1063782610040019

By:

Kagadei, V. A.;
Nefyodtsev, E. V.

Publication type:

Article

Deposition of thin Bi2Te3 and Sb2Te3 films by pulsed laser ablation.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 544, doi. 10.1134/S1063782610040238

By:

Virt, I. S.;
Shkumbatyuk, T. P.;
Kurilo, I. V.;
Rudyi, I. O.;
Lopatinskyi, T. Ye.;
Linnik, L. F.;
Tetyorkin, V. V.;
Phedorov, A. G.

Publication type:

Article

Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 519, doi. 10.1134/S1063782610040196

By:

Drozdov, Yu. N.;
Novikov, A. V.;
Shaleev, M. V.;
Yurasov, D. V.

Publication type:

Article

Specific features of erbium ion photoluminescence in structures with amorphous and crystalline silicon nanoclusters in silica matrix.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 467, doi. 10.1134/S106378261004010X

By:

Dyakov, S. A.;
Zhigunov, D. M.;
Timoshenko, V. Yu.

Publication type:

Article

Effect of low-temperature annealing on photoluminescence of silicon nanocluster structures.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 514, doi. 10.1134/S1063782610040184

By:

Romanyuk, B. N.;
Melnik, V. P.;
Popov, V. G.;
Khatsevich, I. M.;
Oberemok, A. S.

Publication type:

Article

1.5–1.6 μm photoluminescence of silicon layers with a high density of lattice defects.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 432, doi. 10.1134/S1063782610040044

By:

Shklyaev, A. A.;
Latyshev, A. V.;
Ichikawa, M.

Publication type:

Article

Characteristics of surface states at the insulator-semiconductor interface in the thin-film electroluminescent structures based on ZnS:Mn.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 498, doi. 10.1134/S1063782610040160

By:

Gurin, N. T.;
Sabitov, O. Yu.;
Afanas'ev, A. M.

Publication type:

Article

Photoconductivity of two-phase hydrogenated silicon films.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 494, doi. 10.1134/S1063782610040159

By:

Kazanskii, A. G.;
Terukov, E. I.;
Forsh, P. A.;
Kleider, J. P.

Publication type:

Article

Physical model of MOS structure aging.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 508, doi. 10.1134/S1063782610040172

By:

Bulusheva, M. A.;
Popov, V. D.;
Protopopov, G. A.;
Skorodumova, A. V.

Publication type:

Article

Mixed conduction in doped semiconductor structures related to quasi-metallic conduction in the impurity band.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 472, doi. 10.1134/S1063782610040111

By:

Agrinskaya, N. V.;
Kozub, V. I.;
Poloskin, D. S.

Publication type:

Article

Influence of the defect structure of γ-La2(1 − x)Nd2 xS3 crystals on their spectroscopic properties.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 421, doi. 10.1134/S1063782610040020

By:

Mamedov, A. A.

Publication type:

Article

Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 4

Current flow mechanism in ohmic contact to n-4 H-SiC.

Stimulated radiation at a wavelength of 2.5 μm at room temperature from optically excited Cd<sub> x</sub>Hg<sub>1 − x</sub>Te-based structures.

The sharply nonlinear current-voltage characteristic of a structure with a quantum well built in the depletion region of a Schottky Barrier.

Optical absorption and diffusion of iron in ZnSe single crystals.

The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals.

Influence of the energy parameters of the deposited laser-induced flow of platinum atoms on characteristics of a Pt/ n-6 H-SiC thin-film structure.

Exciton binding energy in semiconductor quantum dots.

Radiation damage of contact structures with diffusion barriers exposed to irradiation with <sup>60</sup>Coγ-ray photons.

Ordered arrays of Si nanocrystals in SiO<sub>2</sub>: Structural, optical, and electronic properties.

Features of self-activated luminescence spectra of CdS:O in the context of band anticrossing theory.

X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO<sub>2</sub> and Si sources.

Light-emitting Si nanostructures formed in SiO<sub>2</sub> on irradiation with swift heavy ions.

Numerical simulation of hydrogenation of GaAs at the cooling stage.

Deposition of thin Bi<sub>2</sub>Te<sub>3</sub> and Sb<sub>2</sub>Te<sub>3</sub> films by pulsed laser ablation.

Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers.

Specific features of erbium ion photoluminescence in structures with amorphous and crystalline silicon nanoclusters in silica matrix.

Effect of low-temperature annealing on photoluminescence of silicon nanocluster structures.

1.5–1.6 μm photoluminescence of silicon layers with a high density of lattice defects.

Characteristics of surface states at the insulator-semiconductor interface in the thin-film electroluminescent structures based on ZnS:Mn.

Photoconductivity of two-phase hydrogenated silicon films.

Physical model of MOS structure aging.

Mixed conduction in doped semiconductor structures related to quasi-metallic conduction in the impurity band.

Influence of the defect structure of γ-La<sub>2(1 − x)</sub>Nd<sub>2 x</sub>S<sub>3</sub> crystals on their spectroscopic properties.