Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 4

Results: 23

The sharply nonlinear current-voltage characteristic of a structure with a quantum well built in the depletion region of a Schottky Barrier.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 478, doi. 10.1134/S1063782610040123
By:
- Korol, A. M.;
- Nosenko, I. V.
Publication type:
Article
Exciton binding energy in semiconductor quantum dots.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 488, doi. 10.1134/S1063782610040147
By:
- Pokutnii, S. I.
Publication type:
Article
Optical absorption and diffusion of iron in ZnSe single crystals.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 444, doi. 10.1134/S1063782610040068
By:
- Vaksman, Yu. F.;
- Nitsuk, Yu. A.;
- Yatsun, V. V.;
- Nasibov, A. S.;
- Shapkin, P. V.
Publication type:
Article
The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 426, doi. 10.1134/S1063782610040032
By:
- Mezdrogina, M. M.;
- Danilevskii, E. Yu.;
- Kuz'min, R. V.;
- Poletaev, N. K.;
- Trapeznikova, I. N.;
- Chukichev, M. V.;
- Bordovskii, G. A.;
- Marchenko, A. V.;
- Eremenko, M. V.
Publication type:
Article
Radiation damage of contact structures with diffusion barriers exposed to irradiation with 60Coγ-ray photons.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 448, doi. 10.1134/S106378261004007X
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Konakova, R. V.;
- Milenin, V. V.;
- Sveshnikov, Yu. N.;
- Sheremet, V. N.
Publication type:
Article
Ordered arrays of Si nanocrystals in SiO2: Structural, optical, and electronic properties.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 482, doi. 10.1134/S1063782610040135
By:
- Antonova, I. V.;
- Skuratov, V. A.;
- Jedrzejewski, J.;
- Balberg, I.
Publication type:
Article
Light-emitting Si nanostructures formed in SiO2 on irradiation with swift heavy ions.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 525, doi. 10.1134/S1063782610040202
By:
- Kachurin, G. A.;
- Cherkova, S. G.;
- Skuratov, V. A.;
- Marin, D. V.;
- Cherkov, A. G.
Publication type:
Article
Numerical simulation of hydrogenation of GaAs at the cooling stage.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 413, doi. 10.1134/S1063782610040019
By:
- Kagadei, V. A.;
- Nefyodtsev, E. V.
Publication type:
Article
Influence of the energy parameters of the deposited laser-induced flow of platinum atoms on characteristics of a Pt/ n-6 H-SiC thin-film structure.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 537, doi. 10.1134/S1063782610040226
By:
- Fominskii, V. Yu.;
- Romanov, R. I.;
- Gnedovets, A. G.;
- Zuev, V. V.;
- Demin, M. V.
Publication type:
Article
Features of self-activated luminescence spectra of CdS:O in the context of band anticrossing theory.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 438, doi. 10.1134/S1063782610040056
By:
- Morozova, N. K.;
- Danilevich, N. D.
Publication type:
Article
X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO2 and Si sources.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 531, doi. 10.1134/S1063782610040214
By:
- Shamin, S. N.;
- Galakhov, V. R.;
- Aksenova, V. I.;
- Karpov, A. N.;
- Shvartz, N. L.;
- Yanovitskaya, Z. Sh.;
- Volodin, V. A.;
- Antonova, I. V.;
- Ezhevskaya, T. B.;
- Jedrzejewski, J.;
- Savir, E.;
- Balberg, I.
Publication type:
Article
Current flow mechanism in ohmic contact to n-4 H-SiC.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 463, doi. 10.1134/S1063782610040093
By:
- Blank, T. V.;
- Goldberg, Yu. A.;
- Posse, E. A.;
- Soldatenkov, F. Yu.
Publication type:
Article
Specific features of erbium ion photoluminescence in structures with amorphous and crystalline silicon nanoclusters in silica matrix.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 467, doi. 10.1134/S106378261004010X
By:
- Dyakov, S. A.;
- Zhigunov, D. M.;
- Timoshenko, V. Yu.
Publication type:
Article
Characteristics of surface states at the insulator-semiconductor interface in the thin-film electroluminescent structures based on ZnS:Mn.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 498, doi. 10.1134/S1063782610040160
By:
- Gurin, N. T.;
- Sabitov, O. Yu.;
- Afanas'ev, A. M.
Publication type:
Article
Effect of low-temperature annealing on photoluminescence of silicon nanocluster structures.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 514, doi. 10.1134/S1063782610040184
By:
- Romanyuk, B. N.;
- Melnik, V. P.;
- Popov, V. G.;
- Khatsevich, I. M.;
- Oberemok, A. S.
Publication type:
Article
Deposition of thin Bi2Te3 and Sb2Te3 films by pulsed laser ablation.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 544, doi. 10.1134/S1063782610040238
By:
- Virt, I. S.;
- Shkumbatyuk, T. P.;
- Kurilo, I. V.;
- Rudyi, I. O.;
- Lopatinskyi, T. Ye.;
- Linnik, L. F.;
- Tetyorkin, V. V.;
- Phedorov, A. G.
Publication type:
Article
Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 519, doi. 10.1134/S1063782610040196
By:
- Drozdov, Yu. N.;
- Novikov, A. V.;
- Shaleev, M. V.;
- Yurasov, D. V.
Publication type:
Article
Stimulated radiation at a wavelength of 2.5 μm at room temperature from optically excited Cd xHg1 − xTe-based structures.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 457, doi. 10.1134/S1063782610040081
By:
- Andronov, A. A.;
- Nozdrin, Yu. N.;
- Okomel'kov, A. V.;
- Varavin, V. S.;
- Mikhailov, N. N.;
- Sidorov, G. Yu.
Publication type:
Article
1.5–1.6 μm photoluminescence of silicon layers with a high density of lattice defects.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 432, doi. 10.1134/S1063782610040044
By:
- Shklyaev, A. A.;
- Latyshev, A. V.;
- Ichikawa, M.
Publication type:
Article
Photoconductivity of two-phase hydrogenated silicon films.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 494, doi. 10.1134/S1063782610040159
By:
- Kazanskii, A. G.;
- Terukov, E. I.;
- Forsh, P. A.;
- Kleider, J. P.
Publication type:
Article
Physical model of MOS structure aging.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 508, doi. 10.1134/S1063782610040172
By:
- Bulusheva, M. A.;
- Popov, V. D.;
- Protopopov, G. A.;
- Skorodumova, A. V.
Publication type:
Article
Mixed conduction in doped semiconductor structures related to quasi-metallic conduction in the impurity band.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 472, doi. 10.1134/S1063782610040111
By:
- Agrinskaya, N. V.;
- Kozub, V. I.;
- Poloskin, D. S.
Publication type:
Article
Influence of the defect structure of γ-La2(1 − x)Nd2 xS3 crystals on their spectroscopic properties.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 421, doi. 10.1134/S1063782610040020
By:
- Mamedov, A. A.
Publication type:
Article

Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 4

The sharply nonlinear current-voltage characteristic of a structure with a quantum well built in the depletion region of a Schottky Barrier.

Exciton binding energy in semiconductor quantum dots.

Optical absorption and diffusion of iron in ZnSe single crystals.

The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals.

Radiation damage of contact structures with diffusion barriers exposed to irradiation with <sup>60</sup>Coγ-ray photons.

Ordered arrays of Si nanocrystals in SiO<sub>2</sub>: Structural, optical, and electronic properties.

Light-emitting Si nanostructures formed in SiO<sub>2</sub> on irradiation with swift heavy ions.

Numerical simulation of hydrogenation of GaAs at the cooling stage.

Influence of the energy parameters of the deposited laser-induced flow of platinum atoms on characteristics of a Pt/ n-6 H-SiC thin-film structure.

Features of self-activated luminescence spectra of CdS:O in the context of band anticrossing theory.

X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO<sub>2</sub> and Si sources.

Current flow mechanism in ohmic contact to n-4 H-SiC.

Specific features of erbium ion photoluminescence in structures with amorphous and crystalline silicon nanoclusters in silica matrix.

Characteristics of surface states at the insulator-semiconductor interface in the thin-film electroluminescent structures based on ZnS:Mn.

Effect of low-temperature annealing on photoluminescence of silicon nanocluster structures.

Deposition of thin Bi<sub>2</sub>Te<sub>3</sub> and Sb<sub>2</sub>Te<sub>3</sub> films by pulsed laser ablation.

Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers.

Stimulated radiation at a wavelength of 2.5 μm at room temperature from optically excited Cd<sub> x</sub>Hg<sub>1 − x</sub>Te-based structures.

1.5–1.6 μm photoluminescence of silicon layers with a high density of lattice defects.

Photoconductivity of two-phase hydrogenated silicon films.

Physical model of MOS structure aging.

Mixed conduction in doped semiconductor structures related to quasi-metallic conduction in the impurity band.

Influence of the defect structure of γ-La<sub>2(1 − x)</sub>Nd<sub>2 x</sub>S<sub>3</sub> crystals on their spectroscopic properties.