Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 2

Results: 24

Electroplasticity of undoped and doped silicon.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 137, doi. 10.1134/S1063782610020016

By:

Velikhanov, A. R.

Publication type:

Article

In the memory of Boris Andreevich Volkov.

Published in:

2010

By:

Arseev, P. I.;
Vasil'ev, M. A.;
Keldysh, L. V.;
Kopaev, Yu. V.;
Maksimov, E. G.;
Sadovskii, M. V.;
Sibel'din, N. N.;
Suris, R. A.;
Fal'kovskii, L. A.;
Khokhlov, D. R.

Publication type:

Obituary

Thermophotovoltaic generators based on gallium antimonide.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 255, doi. 10.1134/S1063782610020223

By:

Khvostikov, V. P.;
Sorokina, S. V.;
Potapovich, N. S.;
Khvostikova, O. A.;
Malievskaya, A. V.;
Vlasov, A. S.;
Shvarts, M. Z.;
Timoshina, N. Kh.;
Andreev, V. M.

Publication type:

Article

The role of interface phonons in the formation of polaron states in quantum wells.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 189, doi. 10.1134/S1063782610020090

By:

Maslov, A. Yu.;
Proshina, O. V.

Publication type:

Article

Instability of the current of the longitudinal autosoliton in p-InSb in a longitudinal magnetic field.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 145, doi. 10.1134/S106378261002003X

By:

Kamilov, I. K.;
Stepurenko, A. A.;
Gummetov, A. E.

Publication type:

Article

Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 233, doi. 10.1134/S106378261002017X

By:

Vinokurov, D. A.;
Vasilyeva, V. V.;
Kapitonov, V. A.;
Lyutetskiy, A. V.;
Nikolaev, D. N.;
Pikhtin, N. A.;
Slipchenko, S. O.;
Stankevich, A. L.;
Shamakhov, V. V.;
Fetisova, N. V.;
Tarasov, I. S.

Publication type:

Article

InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 223, doi. 10.1134/S1063782610020156

By:

Jung-Hui Tsai;
Wen-Shiung Lour;
Tzu-Yen Weng;
Chien-Ming Li

Publication type:

Article

Preparation and optical properties of ZnSe:Ni crystals.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 141, doi. 10.1134/S1063782610020028

By:

Vaksman, Yu. F.;
Nitsuk, Yu. A.;
Yatsun, V. V.;
Nasibov, A. S.;
Shapkin, P. V.

Publication type:

Article

The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 184, doi. 10.1134/S1063782610020089

By:

Seredin, P. V.;
Glotov, A. V.;
Domashevskaya, E. P.;
Arsentyev, I. N.;
Vinokurov, D. A.;
Tarasov, I. S.;
Zhurbina, I. A.

Publication type:

Article

Microstructure and strain of ZnO molecular-beam epitaxial layers on sapphire.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 251, doi. 10.1134/S1063782610020211

By:

Ratnikov, V. V.;
Kyutt, R. N.;
Ivanov, S. V.;
Scheglov, M. P.;
Baar, A.

Publication type:

Article

Impact of resonance-state scattering on the kinetics of two-dimensional electrons.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 198, doi. 10.1134/S1063782610020119

By:

Keepa, M. S.;
Alekseev, P.;
Yassievich, I. N.

Publication type:

Article

High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm).

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 263, doi. 10.1134/S1063782610020235

By:

Astakhova, A. P.;
Golovin, A. S.;
Il'inskaya, N. D.;
Kalinina, K. V.;
Kizhayev, S. S.;
Serebrennikova, O. Yu.;
Stoyanov, N. D.;
Horvath, Zs. J.;
Yakovlev, Yu. P.

Publication type:

Article

Anomalous scattering of electrons in n-Si crystals irradiated with protons.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 151, doi. 10.1134/S1063782610020041

By:

Pagava, T. A.;
Maisuradze, N. I.

Publication type:

Article

Highly efficient photovoltaic cells based on In0.53Ga0.47 as alloys with isovalent doping.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 228, doi. 10.1134/S1063782610020168

By:

Karlina, L. B.;
Vlasov, A. S.;
Kulagina, M. M.;
Rakova, E. P.;
Timoshina, N. Kh.;
Andreev, V. M.

Publication type:

Article

Electrical properties of hybrid (ferromagnetic metal)—(layered semiconductor) Ni/ p–GaSe structures.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 171, doi. 10.1134/S1063782610020077

By:

Bakhtinov, A. P.;
Vodopyanov, V. N.;
Kovalyuk, Z. D.;
Netyaga, V. V.;
Lytvyn, O. S.

Publication type:

Article

Visible photoluminescence of selectively etched porous nc-Si-Siox structures.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 206, doi. 10.1134/S1063782610020120

By:

Indutnyi, I. Z.;
Michailovska, E. V.;
Shepeliavyi, P. E.;
Dan'ko, V. A.

Publication type:

Article

Epitaxial growth and properties of Mg xZn1- xO films produced by pulsed laser deposition.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 246, doi. 10.1134/S106378261002020X

By:

Lotin, A. A.;
Novodvorsky, O. A.;
Khaydukov, E. V.;
Glebov, V. N.;
Rocheva, V. V.;
Khramova, O. D.;
Panchenko, V. Ya.;
Wenzel, C.;
Trumpaicka, N.;
Chtcherbachev, K. D.

Publication type:

Article

Resonant raman scattering and dispersion of polar optical and acoustic phonons in hexagonal inn.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 161, doi. 10.1134/S1063782610020065

By:

Davydov, V. Yu.;
Klochikhin, A. A.;
Smirnov, A. N.;
Strashkova, I. Yu.;
Krylov, A. S.;
Hai Lu;
Schaff, William J.;
Lee, H.-M.;
Hong, Y.-L.;
Gwo, S.

Publication type:

Article

A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 238, doi. 10.1134/S1063782610020181

By:

Vinokurov, D. A.;
Konyaev, V. P.;
Ladugin, M. A.;
Lyutetskiy, A. V.;
Marmalyuk, A. A.;
Padalitsa, A. A.;
Petrunov, A. N.;
Pikhtin, N. A.;
Simakov, V. A.;
Slipchenko, S. O.;
Sukharev, A. V.;
Fetisova, N. V.;
Shamakhov, V. V.;
Tarasov, I. S.

Publication type:

Article

The mechanism of metal conductivity over the interface between organic insulators.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 211, doi. 10.1134/S1063782610020132

By:

Nikitenko, V. R.;
Tameev, A. R.;
Vannikov, A. V.

Publication type:

Article

The conductivity and magnetic properties of zinc oxide thin films doped with cobalt.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 155, doi. 10.1134/S1063782610020053

By:

Kytin, V. G.;
Kulbachinskii, V. A.;
Glebov, D. S.;
Burova, L. I.;
Kaul, A. R.;
Reukova, O. V.

Publication type:

Article

Spin injection in GaAs/GaSb quantum-well heterostructures.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 194, doi. 10.1134/S1063782610020107

By:

Terent'ev, Ya. V.;
Toropov, A. A.;
Meltser, B. Ya.;
Semenov, A. N.;
Solov'ev, V. A.;
Sedova, I. V.;
Usikova, A. A.;
Ivanov, S. V.

Publication type:

Article

Dissipation loss of mid-infrared radiation in a dielectric waveguide.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 243, doi. 10.1134/S1063782610020193

By:

Averkiev, N. S.;
Slipchenko, S. O.;
Sokolova, Z. N.;
Tarasov, I. S.

Publication type:

Article

Calculation and analysis of distributions of current density and temperature over the area of the the InGaN/GaN structure of high-power light-emitting diodes.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 218, doi. 10.1134/S1063782610020144

By:

Sergeev, V. A.;
Hodakov, A. M.

Publication type:

Article

Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 2

Electroplasticity of undoped and doped silicon.

In the memory of Boris Andreevich Volkov.

Thermophotovoltaic generators based on gallium antimonide.

The role of interface phonons in the formation of polaron states in quantum wells.

Instability of the current of the longitudinal autosoliton in p-InSb in a longitudinal magnetic field.

Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide.

InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage.

Preparation and optical properties of ZnSe:Ni crystals.

The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures.

Microstructure and strain of ZnO molecular-beam epitaxial layers on sapphire.

Impact of resonance-state scattering on the kinetics of two-dimensional electrons.

High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm).

Anomalous scattering of electrons in n-Si crystals irradiated with protons.

Highly efficient photovoltaic cells based on In<sub>0.53</sub>Ga<sub>0.47</sub> as alloys with isovalent doping.

Electrical properties of hybrid (ferromagnetic metal)—(layered semiconductor) Ni/ p–GaSe structures.

Visible photoluminescence of selectively etched porous nc-Si-Sio<sub>x</sub> structures.

Epitaxial growth and properties of Mg<sub> x</sub>Zn<sub>1- x</sub>O films produced by pulsed laser deposition.

Resonant raman scattering and dispersion of polar optical and acoustic phonons in hexagonal inn.

A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD.

The mechanism of metal conductivity over the interface between organic insulators.

The conductivity and magnetic properties of zinc oxide thin films doped with cobalt.

Spin injection in GaAs/GaSb quantum-well heterostructures.

Dissipation loss of mid-infrared radiation in a dielectric waveguide.

Calculation and analysis of distributions of current density and temperature over the area of the the InGaN/GaN structure of high-power light-emitting diodes.