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Results: 23

The role of stress distribution at the film/barrier interface in formation of copper silicides.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 116, doi. 10.1134/S1063782610010203
By:
- Panin, A. V.;
- Shugurov, A. R.;
- Ivonin, I. V.;
- Shesterikov, Ye. V.
Publication type:
Article
Detection of singlet oxygen in photoexcited porous silicon nanocrystals by photoluminescence measurements.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 89, doi. 10.1134/S106378261001015X
By:
- Gongalsky, M. B.;
- Konstantinova, E. A.;
- Osminkina, L. A.;
- Timoshenko, V. Yu.
Publication type:
Article
Paradoxes of photoconductive target and optical control of secondary ion yield.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 98, doi. 10.1134/S1063782610010173
By:
- Rokakh, A. G.;
- Matasov, M. D.
Publication type:
Article
The initial stage of growth of crystalline nanowhiskers.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 112, doi. 10.1134/S1063782610010197
By:
- Sibirev, N. V.;
- Nazarenko, M. B.;
- Cirlin, G. E.;
- Samsonenko, Yu. B.;
- Dubrovskii, V. G.
Publication type:
Article
Determination of the composition of binary chalcogenide glasses by X-ray fluorescence analysis.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 24, doi. 10.1134/S1063782610010021
By:
- Bordovsky, G. A.;
- Marchenko, A. V.;
- Seregin, P. P.;
- Smirnova, N. N.;
- Terukov, E. I.
Publication type:
Article
Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/ p( n)-GaSb type II heterostructures with deep quantum wells at the interface.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 66, doi. 10.1134/S1063782610010100
By:
- Mikhailova, M. P.;
- Ivanov, E. V.;
- Moiseev, K. D.;
- Yakovlev, Yu. P.;
- Hulicius, E.;
- Hospodkova, A.;
- Pangrac, J.;
- Šimeček, T.
Publication type:
Article
Spreading resistance and compensation of charge carriers in ferromagnetic silicon implanted with manganese.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 28, doi. 10.1134/S1063782610010033
By:
- Orlov, A. F.;
- Balagurov, L. A.;
- Kulemanov, I. V.;
- Parkhomenko, Yu. N.;
- Kartavykh, A. V.;
- Saraikin, V. V.;
- Agafonov, Yu. A.;
- Zinenko, V. I.
Publication type:
Article
Charge carrier transport in Ge20As20S60 chalcogenide semiconductor films.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 76, doi. 10.1134/S1063782610010124
By:
- Kazakova, L. P.;
- Tsendin, K. D.;
- Lebedev, E. A.;
- Arsova, D.;
- Obukhova, I. A.
Publication type:
Article
Inherent potential inhomogeneity on the semiconductor surface for equilibrium impurity distribution.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 41, doi. 10.1134/S1063782610010069
By:
- Bondarenko, V. B.;
- Davydov, S. N.;
- Filimonov, A. V.
Publication type:
Article
Efficient infrared-terahertz pulse conversion in waveguide semiconductor structures.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 106, doi. 10.1134/S1063782610010185
By:
- Kukushkin, V. A.
Publication type:
Article
Growth of the (In2S3) x(FeIn2S4)1 − x single crystals and properties of photoelectric structures on their basis.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 37, doi. 10.1134/S1063782610010057
By:
- Bodnar, I. V.;
- Rud, V. Yu.;
- Rud, Yu. V.;
- Terukov, E. I.
Publication type:
Article
Estimation of the adequacy of the fractal model of the atomic structure of amorphous silicon.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 84, doi. 10.1134/S1063782610010148
By:
- Golodenko, A. B.
Publication type:
Article
Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 93, doi. 10.1134/S1063782610010161
By:
- Tsatsulnikov, A. F.;
- Lundin, W. V.;
- Sakharov, A. V.;
- Zavarin, E. E.;
- Usov, S. O.;
- Nikolaev, A. E.;
- Cherkashin, N. A.;
- Ber, B. Ya.;
- Kazantsev, D. Yu.;
- Mizerov, M. N.;
- Park, Hee Seok;
- Hytch, M.;
- Hue, F.
Publication type:
Article
Effect of growth temperature on properties of transparent conducting gallium-doped ZnO films.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 32, doi. 10.1134/S1063782610010045
By:
- Abduev, A. Kh.;
- Akhmedov, A. K.;
- Asvarov, A. Sh.;
- Abdullaev, A. A.;
- Sulyanov, S. N.
Publication type:
Article
Monitoring the composition of the Cd1 − zZn zTe heteroepitaxial layers by spectroscopic ellipsometry.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 59, doi. 10.1134/S1063782610010094
By:
- Yakushev, M.;
- Shvets, V.;
- Azarov, I.;
- Rykhlytski, S.;
- Sidorov, Yu.;
- Spesivtsev, E.;
- Shamirzaev, T.
Publication type:
Article
Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 1, doi. 10.1134/S106378261001001X
By:
- Sobolev, N. A.
Publication type:
Article
Formation of three-dimensional ZnSe-based semiconductor nanostructures.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 72, doi. 10.1134/S1063782610010112
By:
- Alyshev, S. V.;
- Zabezhaylov, A. O.;
- Mironov, R. A.;
- Kozlovsky, V. I.;
- Dianov, E. M.
Publication type:
Article
Discovery of the (In2S3) x(MnIn2S4)1 − x solid solutions and fabrication of photosensitive structures based on them.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 45, doi. 10.1134/S1063782610010070
By:
- Rud, V. Yu.;
- Rud, Yu. V.;
- Osipova, M. A.;
- Bodnar, I. V.
Publication type:
Article
To the memory of Mikhail Grigor’evich Mil’vidskii (1932–2009).
Published in:
2010
Publication type:
Obituary
Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 50, doi. 10.1134/S1063782610010082
By:
- Firsov, D. A.;
- Shterengas, L.;
- Kipshidze, G.;
- Zerova, V. L.;
- Hosoda, T.;
- Thumrongsilapa, P.;
- Vorobjev, L. E.;
- Belenky, G.
Publication type:
Article
Monte Carlo simulation of growth of nanowhiskers.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 127, doi. 10.1134/S1063782610010227
By:
- Nastovjak, A. G.;
- Neizvestny, I. G.;
- Shwartz, I. L.;
- Yanovitskaya, Z. Sh.
Publication type:
Article
The nature of emission of porous silicon produced by chemical etching.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 79, doi. 10.1134/S1063782610010136
By:
- Korsunskaya, N. E.;
- Stara, T. R.;
- Khomenkova, L. Yu.;
- Svezhentsova, K. V.;
- Melnichenko, N. N.;
- Sizov, F. F.
Publication type:
Article
Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 123, doi. 10.1134/S1063782610010215
By:
- Lundin, W. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Sakharov, A. V.;
- Usov, S. O.;
- Nikolaev, A. E.;
- Davydov, D. V.;
- Cherkashin, N. A.;
- Tsatsulnikov, A. F.
Publication type:
Article

The role of stress distribution at the film/barrier interface in formation of copper silicides.

Detection of singlet oxygen in photoexcited porous silicon nanocrystals by photoluminescence measurements.

Paradoxes of photoconductive target and optical control of secondary ion yield.

The initial stage of growth of crystalline nanowhiskers.

Determination of the composition of binary chalcogenide glasses by X-ray fluorescence analysis.

Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/ p( n)-GaSb type II heterostructures with deep quantum wells at the interface.

Spreading resistance and compensation of charge carriers in ferromagnetic silicon implanted with manganese.

Charge carrier transport in Ge<sub>20</sub>As<sub>20</sub>S<sub>60</sub> chalcogenide semiconductor films.

Inherent potential inhomogeneity on the semiconductor surface for equilibrium impurity distribution.

Efficient infrared-terahertz pulse conversion in waveguide semiconductor structures.

Growth of the (In<sub>2</sub>S<sub>3</sub>)<sub> x</sub>(FeIn<sub>2</sub>S<sub>4</sub>)<sub>1 − x</sub> single crystals and properties of photoelectric structures on their basis.

Estimation of the adequacy of the fractal model of the atomic structure of amorphous silicon.

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes.

Effect of growth temperature on properties of transparent conducting gallium-doped ZnO films.

Monitoring the composition of the Cd<sub>1 − z</sub>Zn<sub> z</sub>Te heteroepitaxial layers by spectroscopic ellipsometry.

Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence.

Formation of three-dimensional ZnSe-based semiconductor nanostructures.

Discovery of the (In<sub>2</sub>S<sub>3</sub>)<sub> x</sub>(MnIn<sub>2</sub>S<sub>4</sub>)<sub>1 − x</sub> solid solutions and fabrication of photosensitive structures based on them.

To the memory of Mikhail Grigor’evich Mil’vidskii (1932–2009).

Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures.

Monte Carlo simulation of growth of nanowhiskers.

The nature of emission of porous silicon produced by chemical etching.

Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes.