Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 1

Results: 23

Inherent potential inhomogeneity on the semiconductor surface for equilibrium impurity distribution.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 41, doi. 10.1134/S1063782610010069

By:

Bondarenko, V. B.;
Davydov, S. N.;
Filimonov, A. V.

Publication type:

Article

The role of stress distribution at the film/barrier interface in formation of copper silicides.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 116, doi. 10.1134/S1063782610010203

By:

Panin, A. V.;
Shugurov, A. R.;
Ivonin, I. V.;
Shesterikov, Ye. V.

Publication type:

Article

Detection of singlet oxygen in photoexcited porous silicon nanocrystals by photoluminescence measurements.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 89, doi. 10.1134/S106378261001015X

By:

Gongalsky, M. B.;
Konstantinova, E. A.;
Osminkina, L. A.;
Timoshenko, V. Yu.

Publication type:

Article

The initial stage of growth of crystalline nanowhiskers.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 112, doi. 10.1134/S1063782610010197

By:

Sibirev, N. V.;
Nazarenko, M. B.;
Cirlin, G. E.;
Samsonenko, Yu. B.;
Dubrovskii, V. G.

Publication type:

Article

Charge carrier transport in Ge20As20S60 chalcogenide semiconductor films.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 76, doi. 10.1134/S1063782610010124

By:

Kazakova, L. P.;
Tsendin, K. D.;
Lebedev, E. A.;
Arsova, D.;
Obukhova, I. A.

Publication type:

Article

Efficient infrared-terahertz pulse conversion in waveguide semiconductor structures.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 106, doi. 10.1134/S1063782610010185

By:

Kukushkin, V. A.

Publication type:

Article

Paradoxes of photoconductive target and optical control of secondary ion yield.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 98, doi. 10.1134/S1063782610010173

By:

Rokakh, A. G.;
Matasov, M. D.

Publication type:

Article

Growth of the (In2S3) x(FeIn2S4)1 − x single crystals and properties of photoelectric structures on their basis.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 37, doi. 10.1134/S1063782610010057

By:

Bodnar, I. V.;
Rud, V. Yu.;
Rud, Yu. V.;
Terukov, E. I.

Publication type:

Article

Estimation of the adequacy of the fractal model of the atomic structure of amorphous silicon.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 84, doi. 10.1134/S1063782610010148

By:

Golodenko, A. B.

Publication type:

Article

Determination of the composition of binary chalcogenide glasses by X-ray fluorescence analysis.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 24, doi. 10.1134/S1063782610010021

By:

Bordovsky, G. A.;
Marchenko, A. V.;
Seregin, P. P.;
Smirnova, N. N.;
Terukov, E. I.

Publication type:

Article

Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 1, doi. 10.1134/S106378261001001X

By:

Sobolev, N. A.

Publication type:

Article

Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/ p( n)-GaSb type II heterostructures with deep quantum wells at the interface.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 66, doi. 10.1134/S1063782610010100

By:

Mikhailova, M. P.;
Ivanov, E. V.;
Moiseev, K. D.;
Yakovlev, Yu. P.;
Hulicius, E.;
Hospodkova, A.;
Pangrac, J.;
Šimeček, T.

Publication type:

Article

Spreading resistance and compensation of charge carriers in ferromagnetic silicon implanted with manganese.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 28, doi. 10.1134/S1063782610010033

By:

Orlov, A. F.;
Balagurov, L. A.;
Kulemanov, I. V.;
Parkhomenko, Yu. N.;
Kartavykh, A. V.;
Saraikin, V. V.;
Agafonov, Yu. A.;
Zinenko, V. I.

Publication type:

Article

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 93, doi. 10.1134/S1063782610010161

By:

Tsatsulnikov, A. F.;
Lundin, W. V.;
Sakharov, A. V.;
Zavarin, E. E.;
Usov, S. O.;
Nikolaev, A. E.;
Cherkashin, N. A.;
Ber, B. Ya.;
Kazantsev, D. Yu.;
Mizerov, M. N.;
Park, Hee Seok;
Hytch, M.;
Hue, F.

Publication type:

Article

Effect of growth temperature on properties of transparent conducting gallium-doped ZnO films.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 32, doi. 10.1134/S1063782610010045

By:

Abduev, A. Kh.;
Akhmedov, A. K.;
Asvarov, A. Sh.;
Abdullaev, A. A.;
Sulyanov, S. N.

Publication type:

Article

Monitoring the composition of the Cd1 − zZn zTe heteroepitaxial layers by spectroscopic ellipsometry.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 59, doi. 10.1134/S1063782610010094

By:

Yakushev, M.;
Shvets, V.;
Azarov, I.;
Rykhlytski, S.;
Sidorov, Yu.;
Spesivtsev, E.;
Shamirzaev, T.

Publication type:

Article

Formation of three-dimensional ZnSe-based semiconductor nanostructures.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 72, doi. 10.1134/S1063782610010112

By:

Alyshev, S. V.;
Zabezhaylov, A. O.;
Mironov, R. A.;
Kozlovsky, V. I.;
Dianov, E. M.

Publication type:

Article

Discovery of the (In2S3) x(MnIn2S4)1 − x solid solutions and fabrication of photosensitive structures based on them.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 45, doi. 10.1134/S1063782610010070

By:

Rud, V. Yu.;
Rud, Yu. V.;
Osipova, M. A.;
Bodnar, I. V.

Publication type:

Article

To the memory of Mikhail Grigor’evich Mil’vidskii (1932–2009).

Published in:: 2010
Publication type:: Obituary

Monte Carlo simulation of growth of nanowhiskers.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 127, doi. 10.1134/S1063782610010227

By:

Nastovjak, A. G.;
Neizvestny, I. G.;
Shwartz, I. L.;
Yanovitskaya, Z. Sh.

Publication type:

Article

The nature of emission of porous silicon produced by chemical etching.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 79, doi. 10.1134/S1063782610010136

By:

Korsunskaya, N. E.;
Stara, T. R.;
Khomenkova, L. Yu.;
Svezhentsova, K. V.;
Melnichenko, N. N.;
Sizov, F. F.

Publication type:

Article

Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 123, doi. 10.1134/S1063782610010215

By:

Lundin, W. V.;
Zavarin, E. E.;
Sinitsyn, M. A.;
Sakharov, A. V.;
Usov, S. O.;
Nikolaev, A. E.;
Davydov, D. V.;
Cherkashin, N. A.;
Tsatsulnikov, A. F.

Publication type:

Article

Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 50, doi. 10.1134/S1063782610010082

By:

Firsov, D. A.;
Shterengas, L.;
Kipshidze, G.;
Zerova, V. L.;
Hosoda, T.;
Thumrongsilapa, P.;
Vorobjev, L. E.;
Belenky, G.

Publication type:

Article

Works matching IS 10637826 AND DT 2010 AND VI 44 AND IP 1

Inherent potential inhomogeneity on the semiconductor surface for equilibrium impurity distribution.

The role of stress distribution at the film/barrier interface in formation of copper silicides.

Detection of singlet oxygen in photoexcited porous silicon nanocrystals by photoluminescence measurements.

The initial stage of growth of crystalline nanowhiskers.

Charge carrier transport in Ge<sub>20</sub>As<sub>20</sub>S<sub>60</sub> chalcogenide semiconductor films.

Efficient infrared-terahertz pulse conversion in waveguide semiconductor structures.

Paradoxes of photoconductive target and optical control of secondary ion yield.

Growth of the (In<sub>2</sub>S<sub>3</sub>)<sub> x</sub>(FeIn<sub>2</sub>S<sub>4</sub>)<sub>1 − x</sub> single crystals and properties of photoelectric structures on their basis.

Estimation of the adequacy of the fractal model of the atomic structure of amorphous silicon.

Determination of the composition of binary chalcogenide glasses by X-ray fluorescence analysis.

Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence.

Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/ p( n)-GaSb type II heterostructures with deep quantum wells at the interface.

Spreading resistance and compensation of charge carriers in ferromagnetic silicon implanted with manganese.

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes.

Effect of growth temperature on properties of transparent conducting gallium-doped ZnO films.

Monitoring the composition of the Cd<sub>1 − z</sub>Zn<sub> z</sub>Te heteroepitaxial layers by spectroscopic ellipsometry.

Formation of three-dimensional ZnSe-based semiconductor nanostructures.

Discovery of the (In<sub>2</sub>S<sub>3</sub>)<sub> x</sub>(MnIn<sub>2</sub>S<sub>4</sub>)<sub>1 − x</sub> solid solutions and fabrication of photosensitive structures based on them.

To the memory of Mikhail Grigor’evich Mil’vidskii (1932–2009).

Monte Carlo simulation of growth of nanowhiskers.

The nature of emission of porous silicon produced by chemical etching.

Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes.

Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures.